Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a semiconductor region of a first conductivity type having a first surface,an opposed region disposed to face the first surface of said semiconductor region,a thin film interposed between said semiconductor region and said opposed region, made of a substance having a forbidden band gap wider than that of said semiconductor region and a barrier relative to said semiconductor region, said thin film having a thickness permitting carriers to flow therethrough by tunneling,means for creating an electrically induced inversion layer kept by said barrier of the interposed thin film in the first surface of said semiconductor region at a position facing said opposed region,a carrier injection means for injecting carriers of said first conductivity type from said opposed region to said inversion layer in the semiconductor region through said thin film by tunneling, anda third region of opposite conductivity formed in the surface of said semiconductor region forming a rectifying junction in conjunction with said semiconductor region, said region of opposite conductivity being in electrical contact with said inversion layer,said opposed region, said inversion layer, said region of opposite conductivity and said semiconductor region being used as an emitter, an induced base, a base contact and a collector of bipolar transmission, respectively.
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Abstract
A semiconductor device having a sandwich construction formed by causing a semiconductor region and an opposed region to face each other across a thin film which is made of a substance having a wider forbidden band gap than that of the semiconductor region and having a barrier relative to the semiconductor region. The so-formed device exhibits various effects such as amplification, negative resistance, switching, voltage or current generation, photo-electric conversion, and light-emission either upon irradiation with light or upon application of a power source thereon.
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Citations
1 Claim
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1. A semiconductor device comprising:
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a semiconductor region of a first conductivity type having a first surface, an opposed region disposed to face the first surface of said semiconductor region, a thin film interposed between said semiconductor region and said opposed region, made of a substance having a forbidden band gap wider than that of said semiconductor region and a barrier relative to said semiconductor region, said thin film having a thickness permitting carriers to flow therethrough by tunneling, means for creating an electrically induced inversion layer kept by said barrier of the interposed thin film in the first surface of said semiconductor region at a position facing said opposed region, a carrier injection means for injecting carriers of said first conductivity type from said opposed region to said inversion layer in the semiconductor region through said thin film by tunneling, and a third region of opposite conductivity formed in the surface of said semiconductor region forming a rectifying junction in conjunction with said semiconductor region, said region of opposite conductivity being in electrical contact with said inversion layer, said opposed region, said inversion layer, said region of opposite conductivity and said semiconductor region being used as an emitter, an induced base, a base contact and a collector of bipolar transmission, respectively.
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Specification