Method of applying optical coatings of silicon compounds by cathode sputtering, and a sputtering cathode for the practice of the method
First Claim
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1. Method for applying optical coatings of compounds of silicon to substrates by reactive cathode sputtering of siliceous target materials, comprising:
- sputtering as the target material a cast and solidified-from-the-molten-state polycrystalline silicon formed body of at least 99% silicon with at least one dopant selected from the group consisting of boron, antimony, phosphorus and arsenic, said silicon formed body containing said at least one dopant only in the range such that said silicon formed body has a specific resistance of 0.5 to 10 ohms×
centimeter by direct current in an atmosphere containing the reaction gas.
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Abstract
Method of applying optical coatings of silicon compounds to substrates by reactive cathode sputtering of siliceous target materials. To solve the problem of improving the utilization of the target material and eliminating the blowout of particles from the target, the target of the invention is a polycrystalline silicon casting of at least 99% silicon containing dopants from the group, boron, antimony, phosphorus and arseic, and it is sputtered by direct current in an atomsphere containing the reaction gas.
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Citations
2 Claims
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1. Method for applying optical coatings of compounds of silicon to substrates by reactive cathode sputtering of siliceous target materials, comprising:
- sputtering as the target material a cast and solidified-from-the-molten-state polycrystalline silicon formed body of at least 99% silicon with at least one dopant selected from the group consisting of boron, antimony, phosphorus and arsenic, said silicon formed body containing said at least one dopant only in the range such that said silicon formed body has a specific resistance of 0.5 to 10 ohms×
centimeter by direct current in an atmosphere containing the reaction gas.
- sputtering as the target material a cast and solidified-from-the-molten-state polycrystalline silicon formed body of at least 99% silicon with at least one dopant selected from the group consisting of boron, antimony, phosphorus and arsenic, said silicon formed body containing said at least one dopant only in the range such that said silicon formed body has a specific resistance of 0.5 to 10 ohms×
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2. Sputtering cathode as a target for applying an optical coating to a substrate comprising:
- a formed body of siliceous material as a target for applying an optical coating to a substrate, the target comprising a cast and solidified-from-the-molten-state polycrystalline silicon formed body of at least 99% silicon with at least one dopant selected from the group consisting of boron, antimony, phosphorus and arsenic, said silicon formed body containing said at least one dopant only in the range such that said silicon formed body has a specific resistance of 0.5 to 10 ohms×
centimeter.
- a formed body of siliceous material as a target for applying an optical coating to a substrate, the target comprising a cast and solidified-from-the-molten-state polycrystalline silicon formed body of at least 99% silicon with at least one dopant selected from the group consisting of boron, antimony, phosphorus and arsenic, said silicon formed body containing said at least one dopant only in the range such that said silicon formed body has a specific resistance of 0.5 to 10 ohms×
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Current AssigneePeter Wirz
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Original AssigneeLeybold Aktiengesellschaft
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InventorsWirz, Peter
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Primary Examiner(s)Nguyen, Nam X.
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Application NumberUS07/009,075Time in Patent Office1,421 DaysField of Search204/192.1, 204/192.12, 204/192.15, 204/192.18, 204/192.22, 204/192.23, 204/192.26, 204/192.27, 204/291US Class Current204/192.23CPC Class CodesC23C 14/3407 Cathode assembly for sputte...C23C 14/3414 Metallurgical or chemical a...
