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Semiconductor device having an improved thin film transistor

  • US 4,980,732 A
  • Filed: 10/17/1988
  • Issued: 12/25/1990
  • Est. Priority Date: 10/15/1987
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising a semiconductor substrate of a first conductivity type;

  • a first insulating layer formed on said semiconductor substrate; and

    a thin film field effect transistor formed on said semiconductor substrate via said first insulating layer, said thin film field effect transistor including a gate electrode formed on said first insulating layer, a second insulating layer covering an upper surface and first and second side surfaces of said gate electrode, and a semiconductor film formed on said semiconductor substrate via said first and second insulating layers and having a first region of a second conductivity type opposite to said first conductivity type, a second region of said first conductivity type formed in contact with a first end of said first region, and a third region of said first conductivity type and formed in contact with a second end of said first region, said gate electrode and a part of said first region being overlapped with each other via said second insulating layer, said second end of said first region being apart from said second side surface of said gate electrode by a distance more than a thickness of a part of said second inslutating layer covering said second side surface of said gate electrode and being not overlapped with said gate electrode, wherein said second and third regions serves as a source and a drain of said thin film field effect transistor, respectively.

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