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Power rectifier with trenches

  • US 4,982,260 A
  • Filed: 10/02/1989
  • Issued: 01/01/1991
  • Est. Priority Date: 10/02/1989
  • Status: Expired due to Fees
First Claim
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1. A rectifier, comprising:

  • a first semiconductor layer of a first conductivity type;

    a first electrode in conductive contact with a first surface of said first layer;

    a second semiconductor layer of said first conductivity type having a higher resistivity than said first semiconductor layer and being disposed adjacent a second surface of said first layer opposite said first surface, said second layer terminating at a principal surface;

    a second electrode in conductive contact with said principal surface;

    a plurality of discrete regions in said second layer successively spaced along said principal surface, said regions being effective to induce depletion zones extending into said second layer and capable of interrupting reverse current flow through said rectifier when an appropriate voltage is applied across said first and second electrodes;

    said rectifier having a forward resistance between said electrodes determined by the chosen composition and dimensions of said semiconductor layers, said electrodes, and said regions;

    a plurality of trenches between said regions extending from said principal surface into said second semiconductor layer;

    said second electrode conforming to the configuration of each trench; and

    said second semiconductor layer being doped to form a Schottky contact between a portion of said second electrode at the lowest portion of each trench and said second semiconductor layer.

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