Power rectifier with trenches

• US 4,982,260 A
• Filed: 10/02/1989
• Issued: 01/01/1991
• Est. Priority Date: 10/02/1989
• Status: Expired due to Fees

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Chang, Hsueh-Rong, Baliga, Bantval J., Tong, David W.
• Primary Examiner(s): Mintel, William
• Assistant Examiner(s): POTTER, ROY KARL
• Application Number:
  US07/415,850
• Time in Patent Office: 456 Days
• Field of Search: 357/38, 357/22 K, 357/15, 357/22 D, 357/22 E, 357/58, 357/86, 357/55
• US Class Current: 257/656
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A semiconductor power rectifier attains low forward voltage drop, low reverse leakage current and improved switching speed by utilizing Schottky contact regions in a p-i-n rectifier along with other means for reducing the required forward bias voltage. In a preferred embodiment, the other means for reducing the required forward bias voltage includes a respective trench between each respective pair of successively spaced current interruption means.

Claims

1. A rectifier, comprising:

a first semiconductor layer of a first conductivity type;

a first electrode in conductive contact with a first surface of said first layer;

a second semiconductor layer of said first conductivity type having a higher resistivity than said first semiconductor layer and being disposed adjacent a second surface of said first layer opposite said first surface, said second layer terminating at a principal surface;

a second electrode in conductive contact with said principal surface;

a plurality of discrete regions in said second layer successively spaced along said principal surface, said regions being effective to induce depletion zones extending into said second layer and capable of interrupting reverse current flow through said rectifier when an appropriate voltage is applied across said first and second electrodes;

said rectifier having a forward resistance between said electrodes determined by the chosen composition and dimensions of said semiconductor layers, said electrodes, and said regions;

a plurality of trenches between said regions extending from said principal surface into said second semiconductor layer;

said second electrode conforming to the configuration of each trench; and

said second semiconductor layer being doped to form a Schottky contact between a portion of said second electrode at the lowest portion of each trench and said second semiconductor layer.

2. A rectifier in accordance with claim 1 wherein said first semiconductor layer comprises N⁺ type semiconductor material, and said regions comprise P⁺ type semiconductor material.

3. A rectifier in accordance with claim 1 wherein the successive spacing of said regions is selected to cause said depletion zones to merge rapidly upon the application to said first and second electrodes of a reverse bias voltage so as to interrupt reverse current flow.

4. A rectifier in accordance with claim 1 wherein said first semiconductor layer comprises N⁺ type semiconductor material, said second semiconductor layer comprises N-type semiconductor material, and said regions comprise P⁺ type semiconductor material.

5. A rectifier in accordance with claim 1 wherein said regions and said trenches are elongated and are disposed substantially parallel to each other.

6. A rectifier in accordance with claim 1 wherein one of said trenches is disposed, respectively, between each pair of successive regions, respectively.

7. A rectifier in accordance with claim 6 wherein the successive spacing of said regions is selected to cause said depletion zones to merge rapidly upon the application of a reverse voltage so as to interrupt reverse current flow.

8. A rectifier comprising:

a first semiconductor layer of a first conductivity type;

a first electrode in conductive contact with a first surface of said first layer;

a second semiconductor layer of said first conductivity type having a higher resistivity than said first semiconductor layer and being disposed adjacent a second surface of said first layer opposite said first surface, said second layer terminating at a principal surface;

a second electrode in conductive contact with said principal surface;

a plurality of discrete regions in said second layer successively spaced along said principal surface, said regions being effective to induce depletion zones extending into said second layer and capable of interrupting reverse current flow through said rectifier when an appropriate voltage is applied across said first and second electrodes;

said rectifier having a forward resistance between said electrodes determined by the chosen composition and dimensions of said semiconductor layers, said electrodes, and said regions;

a pair of trenches disposed, respectively, between each pair of successive regions, respectively, the trenches of each of said trench pairs being mutually spaced to define a mesa region therebetween;

said second electrode conforming to the configuration of each trench and mesa region; and

a layer of silicon dioxide disposed between said second electrode and the surfaces of each of said trenches.

9. A rectifier in accordance with claim 8 wherein each of said mesa regions includes a third semiconductor layer of said first conductivity type, said third layer extending into said second layer from said principal surface and being in conductive contact with said second electrode;

and wherein

said first semiconductor layer comprises N⁺ type semiconductor material, said second semiconductor layer comprises N-type semiconductor material, said regions comprise P⁺ type semiconductor material and said third semiconductor layer comprises N⁺ type semiconductor material.

10. A rectifier in accordance with claim 8 wherein the successive spacing of said regions and said layers of silicon dioxide is selected to cause said depletion zones to merge rapidly upon the application of a reverse voltage across said first and second electrodes so as to interrupt reverse current flow.

11. A two-terminal semiconductor rectifier comprising:

a first semiconductor layer of N⁺ type semiconductor material;

a first electrode in conductive contact with a first surface of said first layer;

a second semiconductor layer of N-type semiconductor material and having a higher resistivity than said first semiconductor layer, said second layer being disposed adjacent a second surface of said first layer opposite said first surface, said second layer terminating at a principal surface;

a second electrode in conductive contact with said principal surface;

current interruption means successively spaced along said principal surface and being effective to induce depletion zones extending into said second layer capable of interrupting reverse current flow through said rectifier, and

a plurality of implants of N-type semiconductor material, said implants being disposed within said second layer, below said principal surface, and being disposed within said second semiconductor layer to substantially a same depth as said current interruption means.

12. A two-terminal rectifier in accordance with claim 11 wherein said current interruption means comprises regions of P⁺ type semiconductor material.

13. A two-terminal rectifier comprising:

a first semiconductor layer of N+ type semiconductor material;

a first electrode in conductive contact with a first surface of said first layer;

a second semiconductor layer of N-type semiconductor material and having a higher resistivity than said first semiconductor layer, said second layer being disposed adjacent a second surface of said first layer opposite said first surface, said second layer terminating at a principal surface;

a second electrode in conductive contact with said principal surface;

current interruption means successively spaced along said principal surface and being effective to induce depletion zones extending into said second layer capable of interrupting reverse current flow through said rectifier; and

a separate trench, respectively, between each pair, respectively, of said successively spaced current interruption means;

said second electrode conforming to the configuration of each of said trenches; and

said second semiconductor layer being doped to form a Schottky contact between a portion of said second electrode at the lowest portion of each of said trenches and said second semiconductor layer.

14. A power rectifier comprising:

a first semiconductor layer of N⁺ type semiconductor material;

a first electrode in conductive contact with a first surface of said first layer;

a second semiconductor layer of N-type semiconductor material and having a higher resistivity than said first semiconductor layer, said second layer being disposed adjacent a second surface of said first layer opposite said first surface, said second layer terminating at a principal surface;

a plurality of trenches in said second layer successively spaced along said principal surface to define mesa regions therebetween;

a second electrode conforming to the configuration of said trenches and said mesa regions; and

a layer of P⁺ type semiconductor material disposed between the second electrode and the bottom surface of each of said trenches.

15. A power rectifier in accordance with claim 14 wherein each of said mesa regions includes a third semiconductor layer of said first conductivity type, said third layer extending into said second layer from said principal surface and being in conductive contact with said second electrode;

and

the spacing of said layers of P⁺ material and said oxide layers is selected to cause depletion zones induced in said second semiconductor layer to merge rapidly upon the application of a reverse voltage across said first and second electrodes so as to interrupt reverse current flow.

16. A power rectifier in accordance with claim 14 further comprising:

a layer of oxide disposed between said second electrode and the side surfaces of each of said trenches.

17. A rectifier, comprising:

a first semiconductor layer of a first conductivity type;

a first electrode in conductive contact with a first surface of said first layer;

a second semiconductor layer of said first conductivity type having a higher resistivity than said first semiconductor layer and being disposed adjacent a second surface of said first layer opposite said first surface, said second layer terminating at a principal surface;

a second electrode in conductive contact with said principal surface;

a plurality of discrete regions in said second layer successively spaced along said principal surface, said regions being effective to induce depletion zones extending into said second layer and capable of interrupting reverse current flow through said rectifier when an appropriate voltage is applied across said first and second electrodes;

said rectifier having a forward resistance between said electrodes determined by the chosen composition and dimensions of said semiconductor layers, said electrodes, and said regions; and

a plurality of implants of said first conductivity type, said implants being located in said second layer between successive ones of said regions and being disposed within said second layer to substantially a same depth as said discrete regions.

18. A rectifier in accordance with claim 17 wherein said first semiconductor layer comprises N⁺ type semiconductor material, said second semiconductor layer comprises N-type semiconductor material, said regions comprise P⁺ type semiconductor material and said implants comprise N-type semiconductor material.

19. A rectifier in accordance with claim 17 wherein the successive spacing of said regions is selected to cause said depletion zones to merge rapidly upon the application to said first and second electrodes of a reverse bias voltage so as to interrupt reverse current flow.