Non-single-crystalline light emitting semiconductor device matrix with insulation

• US 4,984,034 A
• Filed: 12/05/1988
• Issued: 01/08/1991
• Est. Priority Date: 02/09/1981
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Mintel, William A.
• Application Number:
  US07/281,957
• Time in Patent Office: 764 Days
• Field of Search: 357/2, 357/63, 357/17, 357/58, 357/32, 357/4, 357/31, 357/59 C, 357/59 D, 357/30 D, 357/30 G, 357/30 H, 357/30 K, 357/30 P, 357/30 Q, 357/16, 357/49, 357/45
• US Class Current: 257/88
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/002 having heterojunctions or graded gap
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting semiconductor device which is provided with a first non-single-crystal semiconductor layer, a second non-single-crystal semiconductor layer formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed on the second semiconductor layer, or a first non-single-crystal semiconductor layer, many second non-single-crystal semiconductor layers formed on the first semiconductor layer and a third non-single-crystal semiconductor layer formed on the first semiconductor layer to cover the second semiconductor layers. The first and second semiconductor layers have either one and the other of p and n conductivity types, respectively. Semiconductors of the first, second and third layers are each doped with a dangling bond and recombination center neutralizer. The semiconductor of the second layer has a smaller energy gap than the semiconductors of the first and third layers.

Claims

1. A light emitting semiconductor device comprising:

a transparent glass substrate;

a plurality of light emitting elements consisting of non-single-crystalline semiconductor which are in the form of a matrix;

an insulator disposed between and in direct contact with the side surfaces of said light emitting elements and with which the spaces between said elements are completely filled; and

a plurality of column electrode lines and a plurality of row electrode lines for addressing particular elements and causing light emission from said particular elements through said transparent glass substrate.

2. The device of claim 1 wherein side and upper surfaces of said light emitting elements are embedded in said insulator which extends on the said side and upper surfaces of said light emitting elements.

3. The device of claim 1 wherein upper and lower surfaces of said insulator are flat, said column or row lines extending over said flat surfaces.

4. The device of claim 1 where said insulator is an organic resin layer.

5. A light emitting semiconductor device of claim 1, wherein the light emitting elements comprise a first non-single crystalline semiconductor layer of a first conductivity type, a second non-single crystalline semiconductor layer formed on the first non-single crystalline semiconductor layer, and a third non-single crystalline semiconductor layer of a second conductivity type opposite to the first conductivity type, said third non-single crystalline semiconductor layer being formed on the second non-single crystalline semiconductor layer.

6. A light emitting semiconductor device of claim 5, wherein the second non-single crystalline semiconductor layer has a smaller energy band gap than the first and third non-single crystalline semiconductor layers.

7. A light emitting semiconductor device of claim 5, wherein a band gap of the second non-single crystalline semiconductor layer is equal to a band gap of the first non-single crystalline semiconductor layer and smaller than a bank gap of the third non-single crystalline semiconductor layer.

8. A light emitting semiconductor device of claim 5, wherein a band gap of the second non-single crystalline semiconductor layer is equal to a band gap of the third non-single crystalline semiconductor layer and smaller than a band gap of the first non-single crystalline semiconductor layer.

9. A light emitting semiconductor device of claim 1, wherein the light emitting elements comprise a first non-single crystalline semiconductor layer of a first conductivity type, a second and third non-single crystalline semiconductor layer formed on the first non-single crystalline semiconductor layer, and a fourth non-single crystalline semiconductor layer of a second conductivity type opposite to the first conductivity type that is formed on the third non-single crystalline semiconductor layer, wherein the second and third non-single crystalline semiconductor layers have smaller band gaps than the first and fourth non-single crystalline semiconductor semiconductor layers.