High voltage thin film transistor with second gate
First Claim
1. A high voltage thin film transistor comprising a non-single crystal semiconductor charge transport layer, laterally disposed source and drain electrodes located adjacent to one surface of said charge transport layer, means for applying a constant high electrical potential to said drain electrode, a first gate dielectric layer located adjacent to an opposite surface of said charge transport layer, a first gate electrode separated from said opposite surface of said charge transport layer by said first gate dielectric layer, said first gate electrode having one edge laterally overlapping said source electrode and another edge laterally spaced from said drain electrode, and means for applying an electrical potential to said first gate electrode in a time varying manner so as to form a first accumulation channel of a given conductivity type periodically opposite to said first gate electrode in said charge transport layer, said transistor being characterized by includingsecond gate electrode means for forming a second accumulation channel extending laterally from said first accumulation channel toward said drain electrode, said second accumulation channel of said given conductivity type being less accumulated than said first accumulation channel, andmeans for applying an electrical potential to said second gate electrode means for preventing depletion of charge carriers within said second accumulation channel.
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Abstract
A high voltage thin film transistor comprises a charge transport layer, laterally disposed source and drain electrodes, a first gate electrode with one edge laterally overlapping the source electrode and another edge laterally spaced from the drain electrode. A source of high potential is continuously applied to the drain electrode and a source of low potential is applied to the first gate electrode in a time varying manner so as to form a first accumulation channel periodically in the charge transport layer, opposite to the first gate electrode. Device performance is improved by including a second gate electrode for forming a second, weaker, accumulation channel extending laterally from the region of the first accumulation channel toward the drain electrode. A source of potential is applied to the second gate electrode means for maintaining charge carriers within the second accumulation channel so as to prevent the charge transport layer from becoming depleted of charge carriers.
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Citations
15 Claims
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1. A high voltage thin film transistor comprising a non-single crystal semiconductor charge transport layer, laterally disposed source and drain electrodes located adjacent to one surface of said charge transport layer, means for applying a constant high electrical potential to said drain electrode, a first gate dielectric layer located adjacent to an opposite surface of said charge transport layer, a first gate electrode separated from said opposite surface of said charge transport layer by said first gate dielectric layer, said first gate electrode having one edge laterally overlapping said source electrode and another edge laterally spaced from said drain electrode, and means for applying an electrical potential to said first gate electrode in a time varying manner so as to form a first accumulation channel of a given conductivity type periodically opposite to said first gate electrode in said charge transport layer, said transistor being characterized by including
second gate electrode means for forming a second accumulation channel extending laterally from said first accumulation channel toward said drain electrode, said second accumulation channel of said given conductivity type being less accumulated than said first accumulation channel, and means for applying an electrical potential to said second gate electrode means for preventing depletion of charge carriers within said second accumulation channel.
Specification