High voltage thin film transistor with second gate

• US 4,984,040 A
• Filed: 06/15/1989
• Issued: 01/08/1991
• Est. Priority Date: 06/15/1989
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Yap, Peng K.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Kim, Daniel Y. J.
• Application Number:
  US07/366,822
• Time in Patent Office: 572 Days
• Field of Search: 357/23.14, 357/23.7, 357/4, 357/15, 357/59, 307/304
• US Class Current: 257/60
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel

Abstract

A high voltage thin film transistor comprises a charge transport layer, laterally disposed source and drain electrodes, a first gate electrode with one edge laterally overlapping the source electrode and another edge laterally spaced from the drain electrode. A source of high potential is continuously applied to the drain electrode and a source of low potential is applied to the first gate electrode in a time varying manner so as to form a first accumulation channel periodically in the charge transport layer, opposite to the first gate electrode. Device performance is improved by including a second gate electrode for forming a second, weaker, accumulation channel extending laterally from the region of the first accumulation channel toward the drain electrode. A source of potential is applied to the second gate electrode means for maintaining charge carriers within the second accumulation channel so as to prevent the charge transport layer from becoming depleted of charge carriers.

Claims

1. A high voltage thin film transistor comprising a non-single crystal semiconductor charge transport layer, laterally disposed source and drain electrodes located adjacent to one surface of said charge transport layer, means for applying a constant high electrical potential to said drain electrode, a first gate dielectric layer located adjacent to an opposite surface of said charge transport layer, a first gate electrode separated from said opposite surface of said charge transport layer by said first gate dielectric layer, said first gate electrode having one edge laterally overlapping said source electrode and another edge laterally spaced from said drain electrode, and means for applying an electrical potential to said first gate electrode in a time varying manner so as to form a first accumulation channel of a given conductivity type periodically opposite to said first gate electrode in said charge transport layer, said transistor being characterized by including

second gate electrode means for forming a second accumulation channel extending laterally from said first accumulation channel toward said drain electrode, said second accumulation channel of said given conductivity type being less accumulated than said first accumulation channel, and

means for applying an electrical potential to said second gate electrode means for preventing depletion of charge carriers within said second accumulation channel.

2. The high voltage thin film transistor as defined in claim 1 characterized in that said charge transport layer comprises an amorphous semiconductor material.

3. The high voltage thin film transistor as defined in claim 2 characterized in that said charge transport layer comprises amorphous silicon.

4. The high voltage thin film transistor as defined in claim 1 characterized in that said charge transport layer comprises a polycrystalline semiconductor material.

5. The high voltage thin film transistor as defined in claim 4 characterized in that said charge transport layer comprises polycrystalline silicon.

6. The high voltage thin film transistor as defined in either claim 1 characterized in that said means for applying an electrical potential to said second gate electrode means applies a constant potential thereto.

7. The high voltage thin film transistor as defined in claim 1, 2 or 6 characterized in that said second gate electrode means is located on the same side of said charge transport layer as said source and drain electrodes.

8. The high voltage thin film transistor as defined in claim 1, 2 or 6 characterized in that said second gate electrode means comprises a second gate dielectric layer and a second gate electrode, and wherein said second gate dielectric layer is disposed adjacent to said charge transport layer and lies between said second gate electrode and said charge transport layer.

9. The high voltage thin film transistor as defined in claim 8 characterized in that said second gate electrode has one edge laterally overlapping said first gate electrode and another edge laterally spaced from said drain electrode by a second distance.

10. The high voltage thin film transistor as defined in claim 8 characterized in that said second gate electrode has one edge laterally overlapping said first gate electrode and another edge laterally overlapping said drain electrode by a second distance.

11. The high voltage thin film transistor as defined in claim 1, 2 or 6 characterized in that said second gate electrode means is located on the same side of said charge transport layer as said first gate dielectric layer and said first gate electrode.

12. The high voltage thin film transistor as defined in claim 1, 2 or 6 characterized in that said second gate electrode means comprises a second gate dielectric layer and a second gate electrode, and wherein said second gate dielectric layer is disposed adjacent to said first gate electrode and said first gate dielectric layer, and lies between said second gate electrode and said first gate dielectric layer.

13. The high voltage thin film transistor as defined in claim 12 characterized in that said second gate electrode has one edge laterally overlapping said first gate electrode and another edge laterally spaced from said drain electrode by a second distance.

14. The high voltage thin film transistor as defined in claim 12 characterized in that said second gate electrode has one edge laterally overlapping said first gate electrode and another edge laterally overlapping said drain electrode by a second distance.

15. The high voltage thin film transistor as defined in claim 1, 2 or 6 characterized in that said second accumulation layer is more weakly accumulated than said first accumulation layer.