Dry etching by alternately etching and depositing

• US 4,985,114 A
• Filed: 10/06/1989
• Issued: 01/15/1991
• Est. Priority Date: 10/14/1988
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Kawakami, Hiroshi, Kure, Tokuo, Okudaira, Sadayuki, Tachi, Shinichi, Tsujimoto, Kazunori
• Primary Examiner(s): Lacey, David L.
• Assistant Examiner(s): BURNS, TODD
• Application Number:
  US07/418,223
• Time in Patent Office: 466 Days
• Field of Search: 156/643, 156/661.1, 156/653, 156/662, 204/192.3, 204/192.32, 437/228
• US Class Current: 216/37
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process
• CPC Class Codes: H01L 21/3085 characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: Y10S 438/913 Diverse treatments performed in unitary chamber

Abstract

A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.

Claims

1. A dry etching method comprising the steps of:

alternately introducing an etching gas and a deposition gas into a reaction chamber at predetermined time intervals; and

alternately etching an exposed surface of an article to be etched and causing a film to be deposited on said surface of said article by applying a first power to said introduced etching and deposition gases to alternately generate an etching plasma and deposition plasma, said etching and deposition plasma alternately coming into contact with said article to be etched said reaction chamber in order to alternately etch and cause a film to be deposited on said surface so as to etch said surface, and said first power being applied after passage of a predetermined amount of time from the start passage of a predetermined amount of time from the start of the introduction of said deposition gas and before the introduction of said etching gas and cut off when the introduction of said etching gas is suspended; and

applying a second power to said article to be etched when the introduction of said etching gas is started and cutting off said second power at a time prior to suspension of the introduction of said etching gas.

2. A dry etching method as claimed in claim 1, wherein said first power is μ

-wave power.

3. A dry etching method as claimed in claim 1, wherein said etching gas is SF₆.

4. A dry etching method as claimed in claim 1, wherein said deposition gas is selected from the group consisting of CCl₄, C₂ Cl₃ F₃, C₂ ClF₅, SiH₃ Cl, CHCl₃, CH₃ Cl, CBrF₃ and C₂ Br₂ F₄.

5. A dry etching method as claimed in claim 1, wherein said first power is applied to a parallel plate type electrode provided in said reaction chamber.

6. A dry etching method as claimed in claim 1, wherein the predetermined amount of time from the start of the introduction of said deposition gas to the application of said first power is selected so as to make a ratio of (VE+VD) to residual etching gas pressure VE in said reaction chamber satisfy the following equation:

space="preserve" listing-type="equation">VE/(VD+VE)>

5/100,

where VD=deposition gas pressure.

7. A dry etching method as claimed in claim 1, wherein said second power is RF power.

8. A dry etching method comprising the steps of:

alternately introducing an etching gas and a deposition gas into a reaction chamber at predetermined time intervals; and

alternately etching an exposed surface of an article to be etched and causing a film to be deposited on said surface of said article by applying power to said introduced etching and deposition gases to alternately generate an etching plasma and deposition plasma said etching and deposition plasma alternately coming into contact with said article in said reaction chamber in order to alternately etch and cause a film to be deposited on said surface of said article so as to etch said surface, and said power being applied after passage of a predetermined amount of time from the start of the introduction of said deposition gas and before the introduction of said etching gas and cut off when the introduction of said etching gas is suspended.