Semiconductor layer structure having an aluminum-silicon alloy layer

• US 4,987,562 A
• Filed: 08/22/1988
• Issued: 01/22/1991
• Est. Priority Date: 08/28/1987
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Watanabe, Kiyoshi
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): LE, HOANGANH T
• Application Number:
  US07/234,781
• Time in Patent Office: 883 Days
• Field of Search: 357/67, 357/71, 357/15, 357/65
• US Class Current: 257/742
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor layer structure includes an alloy layer of aluminum and silicon formed on a silicon substrate. The concentration of silicon contained in the aluminum-silicon alloy layer is within a range of 10 to 75 weight percent. A barrier layer is formed on top of the aluminum-silicon alloy layer, and a metallic layer is formed on top of the barrier layer.

Claims

1. A semiconductor layer structure comprising:

a silicon substrate;

an alloy layer of aluminum and silicon formed on the silicon substrate, the concentration of silicon contained in the aluminum-silicon alloy layer being within a range of 10 to 75 weight percent;

a barrier layer formed on top of the aluminum-silicon alloy layer; and

a metallic layer formed on top of the barrier layer, the barrier layer preventing the silicon contained in the alloy layer from diffusing into the metallic layer.

2. A semiconductor layer structure as claimed in claim 1, wherein the metallic layer formed on top of the barrier layer is a Schottky barrier electrode.

3. A semiconductor layer structure as claimed in claim 1, wherein the silicon substrate comprises an impurity diffused layer, and the aluminum-silicon alloy layer is formed on the impurity diffused layer.

4. A semiconductor layer structure as claimed in claim 3, wherein the metallic layer formed on the top of the barrier layer is an ohmic contact electrode.

5. A semiconductor layer structure comprising:

a silicon substrate;

a first alloy layer of aluminum and silicon formed on the silicon substrate, the concentration of silicon contained in the first alloy layer being within a range of 10 to 75 weight percent;

a barrier layer formed on top of the aluminum-silicon alloy layer; and

a second alloy layer of aluminum formed on top of the barrier layer, the concentration of aluminum contained in the second alloy layer being greater than the concentration of aluminum contained in the first alloy layer.

6. A semiconductor layer structure as claimed in claim 5, wherein the second alloy layer is an aluminum-silicon alloy layer, and the concentration of silicon in the second alloy layer is 2% or less by weight.

7. A semiconductor device comprising:

a silicon substrate having an impurity diffused region;

a first layer structure formed on top of a surface portion of the silicon substrate which has a conduction type different from the impurity diffused region; and

a second layer structure formed on top of the impurity diffused region,

each of the first and second layer structures comprising;

an alloy layer of aluminum and silicon formed on the corresponding surface portion of silicon substrate, the concentration of silicon contained in the aluminum-silicon alloy layer being within a range of 10 to 75 weight percent;

a barrier layer formed on top of the aluminum-silicon alloy layer; and

a metallic layer formed on top of the barrier layer.

8. A semiconductor layer structure as claimed in claim 7, wherein the metallic layer contains aluminum as the major component, and the concentration of aluminum in the metallic layer is greater than the concentration of aluminum in the aluminum-silicon alloy layer.