Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
First Claim
1. An electronic device having a multilayer wiring structure comprising:
- a substrate;
a first metal wiring layer formed on portions of said substrate;
an interlayer insulation layer formed on said substrate and said first metal wiring layer and comprising a cured coating of a ladder-type silylated silsesquioxane polymer having a general formula;
##STR9## where R is selected from one of a methyl,ethyl and phenyl group, and n is an integer between 50 and 10,000 thereby providing a silylated silsesquioxane polymer which is capable of melting and forming a flat plane; and
a second metal wiring layer formed on said interlayer insulation layer.
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Abstract
A lower alkyl polysilsesquioxane having a general formula ##STR1## wherein R is CH3 is C2 H5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -31 20° C. to -50° C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20° C. to -50° C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60° C. to 100° C. under an inert gas pressurized at 1,000 to 3,000 Pa.
Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula ##STR2## wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.
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Citations
13 Claims
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1. An electronic device having a multilayer wiring structure comprising:
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a substrate; a first metal wiring layer formed on portions of said substrate; an interlayer insulation layer formed on said substrate and said first metal wiring layer and comprising a cured coating of a ladder-type silylated silsesquioxane polymer having a general formula;
##STR9## where R is selected from one of a methyl,ethyl and phenyl group, and n is an integer between 50 and 10,000 thereby providing a silylated silsesquioxane polymer which is capable of melting and forming a flat plane; anda second metal wiring layer formed on said interlayer insulation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An electronic device having a multiple layer wiring structure comprising:
a passivation layer, formed on an upper wiring layer in the multiple layer wiring structure, said passivation layer comprising a cured coating of a ladder-type silylated silsesquioxane polymer having a general formula;
##STR10## where R is selected from one of a methyl, ethyl and phenyl group, and n is an integer between 50 and 10,000, thereby providing a silylated silsesquioxane polymer capable of melting and forming a flat plane.- View Dependent Claims (9, 10, 11, 12, 13)
Specification