Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board

• US 4,988,514 A
• Filed: 12/02/1988
• Issued: 01/29/1991
• Est. Priority Date: 11/01/1984
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Miyagawa, Masashi, Yoneda, Yasuhiro, Matsuura, Azuma, Fukuyama, Shun-ichi, Nishii, Kota
• Primary Examiner(s): Cashion, Jr., Merrell C.
• Assistant Examiner(s): Rucker, Susan S.
• Application Number:
  US07/281,926
• Time in Patent Office: 788 Days
• Field of Search: 428/429, 428/432, 428/457, 428/688, 428/901, 428/900, 428/433, 428/447, 428/448, 428/450
• US Class Current: 428/447
• CPC Class Codes: C08G 77/06 Preparatory processes C08G77/045 takes precedence
• CPC Class Codes: H01B 3/46 silicones
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02137 the material comprising alkyl silsesquioxane, e.g. MSQ
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/4803 Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks H01L21/4846 takes precedence; printed circuit boards H05K1/00
• CPC Class Codes: H01L 21/481 Insulating layers on insulating parts, with or without metallisation
• CPC Class Codes: H01L 23/49894 Materials of the insulating layers or coatings
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 3/4676 Single layer compositions
• CPC Class Codes: Y10S 428/90 Magnetic feature
• CPC Class Codes: Y10S 428/901 Printed circuit
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A lower alkyl polysilsesquioxane having a general formula ##STR1## wherein R is CH₃ is C₂ H₅, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -31 20° C. to -50° C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20° C. to -50° C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60° C. to 100° C. under an inert gas pressurized at 1,000 to 3,000 Pa.

Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula ##STR2## wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.

Claims

1. An electronic device having a multilayer wiring structure comprising:

a substrate;

a first metal wiring layer formed on portions of said substrate;

an interlayer insulation layer formed on said substrate and said first metal wiring layer and comprising a cured coating of a ladder-type silylated silsesquioxane polymer having a general formula;

##STR9## where R is selected from one of a methyl,ethyl and phenyl group, and n is an integer between 50 and 10,000 thereby providing a silylated silsesquioxane polymer which is capable of melting and forming a flat plane; and

a second metal wiring layer formed on said interlayer insulation layer.

2. An electronic device according to claim 1, further comprising an inorganic insulating layer formed between said second metal wiring layer and said interlayer insulating layer.

3. An electronic device according to claim 1, wherein said electronic device is a semiconductor device.

4. An electronic device according to claim 1, wherein said electronic device is a magnetic bubble memory device.

5. An electronic device according to claim 1, wherein R is selected from the group consisting of CH₃ and C₂ H₅.

6. An electronic device according to claim 1, wherein said silylated polysilsesquioxane is ethyl polysilsesquioxane having triethyl silylated end groups and having an average molecular weight of approximately 8.4×

10³ to 3.2×

10⁵.

7. An electronic device according to claim 1, wherein said silylated polysilsesquioxane is methyl polysilsesquioxane having trimethyl silylated end groups and having an average molecular weight of approximately 7.0×

10³ to 2.7×

10⁵.

8. An electronic device having a multiple layer wiring structure comprising:

a passivation layer, formed on an upper wiring layer in the multiple layer wiring structure, said passivation layer comprising a cured coating of a ladder-type silylated silsesquioxane polymer having a general formula;

##STR10## where R is selected from one of a methyl, ethyl and phenyl group, and n is an integer between 50 and 10,000, thereby providing a silylated silsesquioxane polymer capable of melting and forming a flat plane.

9. An electronic device according to claim 8, wherein said electronic device is a semiconductor device.

10. An electronic device according to claim 8, wherein said electronic device is a magnetic bubble memory device.

11. An electronic device according to claim 8, wherein R is CH₃ or C₂ H₅.

12. An electronic device according to claim 8, wherein said silylated polysilsesquioxane is ethyl polysilsesquioxane having triethyl silylated end groups and having an average molecular weight of approximately 8.4×

10³ to 3.2×

10⁵.

13. An electronic device according to claim 8, wherein said silylated polysilsesquioxane is methyl polysilsesquioxane having trimethyl silylated end groups and having an average molecular weight of approximately 7.0×

10³ to 2.7×

10⁵.