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Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board

  • US 4,988,514 A
  • Filed: 12/02/1988
  • Issued: 01/29/1991
  • Est. Priority Date: 11/01/1984
  • Status: Expired due to Fees
First Claim
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1. An electronic device having a multilayer wiring structure comprising:

  • a substrate;

    a first metal wiring layer formed on portions of said substrate;

    an interlayer insulation layer formed on said substrate and said first metal wiring layer and comprising a cured coating of a ladder-type silylated silsesquioxane polymer having a general formula;

    ##STR9## where R is selected from one of a methyl,ethyl and phenyl group, and n is an integer between 50 and 10,000 thereby providing a silylated silsesquioxane polymer which is capable of melting and forming a flat plane; and

    a second metal wiring layer formed on said interlayer insulation layer.

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