Via hole checker

• US 4,988,877 A
• Filed: 10/03/1989
• Issued: 01/29/1991
• Est. Priority Date: 10/03/1989
• Status: Expired due to Term

• Current Assignee: Tencor Instruments (KLA Corporation)
• Original Assignee: Tencor Instruments (KLA Corporation)
• Inventors: Stokowksi, Stanley, Wolze, David, Neukermans, Armand P.
• Primary Examiner(s): Anderson, Bruce C.
• Application Number:
  US07/416,764
• Time in Patent Office: 483 Days
• Field of Search: 250/358.1, 250/372.1, 250/306, 250/307
• US Class Current: 250/358.1
• CPC Class Codes: G01N 23/2273 Measuring photoelectron spectrum, e.g. electron spectroscopy for chemical analysis [ESCA] or X-ray photoelectron spectroscopy [XPS]

Abstract

Method and apparatus for determining the amount, if any, of residue remaining at the bottom of an aperture in a layer of dielectric or insulator material. A layer of electrically conducting material is positioned adjacent to the aperture bottom, an electron collector is positioned adjacent to the mouth of the aperture, and a voltage difference (optional) is impressed between the conducting material and the electron collector. The aperture bottom is illuminated with a light beam with photon energy greater than the electron work function of the conducting material, and a portion of the photons that comprise the light beam reach the conducting material and produce photoelectrons by photoemissive action. A photoelectron current is sensed by the electron collector, and the cleanliness of the aperture bottom is determined from the value of the current.

Claims

1. A method for determining the cleanliness of the bottom of an aperture formed in a layer of dielectric material, the method comprising the steps of:

providing a layer of electrically conducting material adjacent to a bottom surface of the dielectric layer, where this conducting material is characterized by an electron work function W, said aperture extending downward through said dielectric layer to said layer of conducting material;

illuminating the aperture and surrounding area from above said dielectric layer with light having a wavelength component that stimulates photoemission in the underlying conducting material, thereby causing photoelectrons to be liberated from the layer of conducting material that lies beneath the aperture and nearby surrounding dielectric layer, a portion of the photoelectrons passing through any dielectric material lying at the bottom of the aperture to produce a photoelectron current, photoelectrons liberated beneath said dielectric layer being scattered by said dielectric layer and contributing little to said photoelectron current; and

determining the photoelectron current that emerges from the aperture, whereby the cleanliness of the bottom of the aperture is determined.

2. The method of claim 1, wherein said step of determining said photoelectron current comprises the steps of:

providing an electron collector at a top surface of said dielectric layer adjacent to the mouth of said aperture to collect said photoelectrons; and

providing a positive voltage difference between the electron collector and said layer of said electrically conducting material.

3. The method of claim 2, wherein said step of providing said positive voltage difference includes providing a voltage in the range of 5-100 volts for said electron collector relative to the voltage of said electrically conducting material.

4. The method of claim 2, wherein said step of providing said positive voltage difference includes providing an electrical field in the range of 10² -10⁴ volts/cm in said aperture, measured from said aperture bottom toward said electron collector.

5. The method of claim 1, wherein said step of providing said layer of said electrically conducting material includes selecting said electrically conducting material from the class of materials with electrical resistivities of no more than 10⁶ Ohm-cm that consists of silicon, germanium, gallium arsenide, polysilicon, tungsten and aluminum, molybdenum, titanium silicide, platinum silicide, palladium silicide, cobalt silicide, zirconium silicide, tantalum silicide, hafnium silicide, niobium silicide, vanadium silicide, nickel silicide, tungsten silicide and molybdenum silicide.

6. The method of claim 1, wherein said step of illuminating said aperture with said light includes providing said light with a light wavelength of at most 0.4 μ

m.

7. The method of claim 1, further including the step of providing said light that illuminates said aperture as a light beam with a diameter greater than the diameter of said aperture.

8. The method of claim 1, wherein said dielectric layer has a plurality of said apertures therein, the method further comprising the step of illuminating the aperture of a second aperture in said dielectric layer with said light having a wavelength that stimulates photoemission in said conducting material substantially simultaneously with illumination of said first aperture.

9. The method of claim 1, wherein said dielectric material has a plurality of said apertures therein, the method comprising the step of sequentially illuminating at least two apertures with said light having wavelength that stimulates photoemission in said conducting material.

10. The method of claim 1, further comprising the step of providing in said aperture an atmosphere composed of one or more gases that have a relatively low likelihood of electron attachment thereto.

11. The method of claim 10, wherein the step of providing said atmosphere of one or more of said gases in said aperture includes choosing said gas from the class of relatively inert gases consisting of He, Ne, Ar, Xe, Kr and N₂.

12. The method of claim 1, further comprising the step of providing in said aperture an ambient atmosphere of pressure in the range of 0.1-10⁵ Pascals.

13. The method of claim 1, further comprising the step of providing in said aperture an ambient atmosphere of less than 0.1 Pascals.

14. The method of claim 1, wherein said thickness of said dielectric material at said aperture bottom lies in the range 0-100 Å

.

15. Apparatus for determining the cleanliness of the bottom of an aperture formed in a layer of dielectric material where the aperture bottom is adjacent to an underlying layer of electrically conducting material with associated work function W, the apparatus comprising:

a light source, to provide a light beam of wavelength λ

<

λ

_o =hc/W, where h=6.62×

10^-27 erg-sec. and c is the speed of light;

positioning means to position the light source above said aperture so that it illuminates the aperture and nearby surrounding dielectric layer with the light beam; and

an electron collector, positioned adjacent to the mouth of the aperture, to collect photoelectrons that emerge from any dielectric layer residue at the aperture bottom and appear as a photoelectron current at the aperture mouth.

16. The apparatus of claim 15, wherein said electron collector comprises:

collection means for collecting and counting said photoelectrons; and

bias means for imposing a positive voltage difference in the range of 5-100 volts between the collection means and said layer of electrically conducting material.

17. The apparatus of claim 15, wherein said layer of electrically conducting material has electrical resistivity of no more than 10⁶ Ohm-cm and is drawn from the class consisting of silicon, germanium, gallium arsenide, polysilicon, tungsten and aluminum.

18. The apparatus of claim 17, wherein said light wavelength is at most 0.4 μ

m.

19. The apparatus of claim 15, further comprising gas means for providing an atmosphere in said aperture of one or more gases that have a relatively low likelihood of electron attachment thereto.

20. The apparatus of claim 19, wherein said gas in said aperture is drawn from the class of relatively inert gases consisting of He, Ne, Ar, Xe, Kr and N₂.

21. The apparatus of claim 15, further comprising vacuum means for providing in said aperture a vacuum atmosphere of pressure in the range of 0.1-10⁵ Pascals.