Process and means for producing films for use in electronics and/or optoelectronics using plasma

• US 4,989,543 A
• Filed: 10/14/1988
• Issued: 02/05/1991
• Est. Priority Date: 10/15/1987
• Status: Expired due to Term

• Current Assignee: Balzers Aktiengesellschaft (OC Oerlikon Corporation AG)
• Original Assignee: Solem
• Inventors: Schmitt, Jacques
• Primary Examiner(s): SILVERMAN, STANLEY S
• Application Number:
  US07/257,905
• Time in Patent Office: 844 Days
• Field of Search: 118/50.1, 118/715, 118/719, 118/723, 118/724, 118/725, 118/728, 427/39, 427/38
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45591 Fixed means, e.g. wings, baffles
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

Apparatus for producing thin film materials in a plasma deposit process. An enclosure is provided including a plasma zone. The apparatus removes non-deposited, residual gaseous reagents from the enclosure after heating the plasma zone for a predetermined time. An airtight chamber surrounds the enclosure and is kept at a pressure lower than the pressure within the enclosure. A screen is provided for directing heat to the enclosure, while maintaining the chamber walls at a lower temperature. In one embodiment of the invention, metal bellows are provided to apply a substrate support plate against a side wall of the enclosure sealing the substrate support with one of the side walls of the enclosure.

Claims

1. Apparatus for producing thin films using a plasma deposit processing comprising:

a non-airtight enclosure in which the prevailing pressure is less than the atmospheric pressure for containing at least one substrate;

means for creating a plasma zone containing said at least one substrate within said enclosure, said means comprising at least one electrode connected to an electric power source;

means for introducing film producing gaseous reagents into said plasma zone;

means for removing the non-deposited residual portion of said gaseous reagents from said enclosure after said reagents have remained for a given period of time within said plasma zone;

an airtight chamber surrounding said enclosure, said chamber being kept at a pressure lower than the pressure within said enclosure;

means for heating said enclosure, said means being disposed within a space separating said enclosure form said chamber, for maintaining walls of said chamber at a temperature that is lower than the temperature of said enclosure; and

,

two obstacles that restrict the flow of the film-producing gaseous reagents into said enclosure through two openings in said enclosure, said obstacles being situated at opposite ends of said enclosure into which and from which said gaseous reagents are moved at least one of which is adjusted from outside said chamber to change the size of a respective opening.

3. Apparatus for producing thin films in accordance with claim 1 further comprising:

at least one substrate support plate supporting a substrate which rests on and is removable from at least one corresponding side wall of said enclosure; and

,

means for applying in a substantially leak-proof manner the substrate support plate to said at least one wall of the enclosure.

4. Apparatus according to claim 3 wherein said means for applying the substrate support plate to one of said side walls of the enclosure maintain a slit between said support plate and said side wall.

2. Apparatus for producing thin films using a plasma deposit process comprising:

an enclosure in which the prevailing pressure is less than the atmospheric pressure;

means for creating a plasma zone within said enclosure, said means comprising at least one electrode connected to an electric power source, at least one substrate, and means for introducing film producing gaseous reagents into said plasma zone;

at least one substrate support plate supporting a substrate which rests on and is removable from at least one corresponding side wall of said enclosure;

means for removing the non-deposited residual portion of said gaseous reagents from said enclosure after said reagents have remained for a given period of time within said plasma zone;

an airtight chamber surrounding said enclosure, said chamber having an internal pressure lower than the pressure within said enclosure;

means for heating said enclosure, said means being disposed within a space separating said enclosure from said chamber; and

means for applying in a substantially leak-proof manner the substrate support plate to said at least one corresponding side wall of the enclosure comprising a pressurizable metal bellows capable of exerting pressure against the substrate support plate, forming an airtight seal with a sidewall of the enclosure, said bellows expanding into the space separating said chamber from said enclosure and being connected to gas feed conduits which are joined to means for pressurizing said bellows.