Process for coating substrates made of a transparent material, for example floatglass
First Claim
1. Process for coating transparent substrate with a transparent dielectric layer having a refractive index less than 1.7 and a layer growth rate greater than 6.0 A cm2 /W sec by means of reactive direct current cathode sputtering in a vacuum chamber into which a reactive gas and a process gas are introduced, the chamber including a cathode which is provided on one of its surfaces with the material to be sputtered and deposited on the substrate, characterized in that the material to be sputtered is a composition of 66-90 at .% silicon, balance nickel, and the layer deposited on the substrate is the corresponding oxide, and the reactive gas introduced into the vacuum chamber is oxygen and the process gas is a noble gas.
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Abstract
Process for coating transparent substrates, for example float glass, with a transparent dielectric layer having a low refractive index (n<1.7) at a high layer growth rate (>6.0A cm2 /W sec) by means of reactive direct current cathode sputtering. A vacuum chamber includes a cathode 5 which is provided on one of its surfaces with the material (target) to be sputtered and deposited on the substrate 3. The material to be sputtered (target) is a silicide, preferably nickel disilicide (NiSi2), and the layer deposited on the substrate is the corresponding oxide, for example NiSi-oxide. The reactive gas introduced into the vacuum chamber is oxygen and the process gas is a noble gas.
38 Citations
2 Claims
- 1. Process for coating transparent substrate with a transparent dielectric layer having a refractive index less than 1.7 and a layer growth rate greater than 6.0 A cm2 /W sec by means of reactive direct current cathode sputtering in a vacuum chamber into which a reactive gas and a process gas are introduced, the chamber including a cathode which is provided on one of its surfaces with the material to be sputtered and deposited on the substrate, characterized in that the material to be sputtered is a composition of 66-90 at .% silicon, balance nickel, and the layer deposited on the substrate is the corresponding oxide, and the reactive gas introduced into the vacuum chamber is oxygen and the process gas is a noble gas.
Specification
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- Resources
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Current AssigneeBalzers und Leybold Deutschland Holding AG (Balzers & Leybold Group)
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Original AssigneeLeybold Aktiengesellschaft
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InventorsRogels, Stephan, Dietrich, Anton, Hartig, Klaus, Szczyrbowski, Joachim
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Primary Examiner(s)Weisstuch, Aaron
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Application NumberUS07/377,531Time in Patent Office575 DaysField of Search204/192.22, 204/192.23, 204/192.26, 204/192.27US Class Current204/192.23CPC Class CodesC03C 17/245 by deposition from the vapo...C03C 2217/23 MixturesC03C 2218/155 by reactive sputteringC23C 14/08 Oxides C23C14/10 takes prec...
