Method for coplanar integration of semiconductor ic devices

• US 4,990,462 A
• Filed: 04/12/1989
• Issued: 02/05/1991
• Est. Priority Date: 04/12/1989
• Status: Expired due to Term

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Sliwa, John W. Jr.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): NGUYEN, TUAN H
• Application Number:
  US07/337,223
• Time in Patent Office: 664 Days
• Field of Search: 437/51, 437/205, 437/226, 437/208, 148/DIG. 28, 357/32, 357/45, 357/68, 357/80
• US Class Current: 438/107
• CPC Class Codes: H01L 2224/95146 by surface tension
• CPC Class Codes: H01L 23/52 Arrangements for conducting electric current within the device in operation from one component to another , i.e. interconnections, e.g. wires, lead frames optical interconnections G02B6/00
• CPC Class Codes: H01L 23/5381 Crossover interconnections, e.g. bridge stepovers
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 29/0657 characterised by the shape of the body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10158 at the passive surface
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: Y10S 148/028 Dicing
• CPC Class Codes: Y10T 29/49133 with component orienting
• CPC Class Codes: Y10T 29/49137 : Different components

Abstract

A high degree of wafer-scale integration of normally incompatible IC devices is achieved by providing a plurality of segments (10), each segment having thereon one or more circuits, circuit elements, sensors and/or I/O connections (14'"'"'). Each segment is provided with at least one edge (12) having an abutting portion (12a) capable of abutting against a similar edge of a neighboring segment. The segments are placed on the surface of a flotation liquid (20) and are allowed to be pulled together so as to mate abutting edges of neighboring segments, thereby forming superchips (10'"'"'). Microbridges (22) are formed between neighboring segments, such as by solidifying the flotation liquid, and interconnections (26) are formed between neighboring segments. In this manner, coplanar integration of semiconductor ICs is obtained, permitting mixed and normally incompatible circuit functions on one pseudomonolithic device as diverse as silicon and III-V digital circuits, III-V optoelectonic devices, static RAMs, charge coupled devices, III-V lasers, superconducting thin films, ferromagnetic non-volatile memories, high electron mobility transistors, and bubble memories, to name a few, to be integrated in any desired combination. The yieldable scale of integration of a given device technology is also greatly extended. The segments are brought together in a particulate-free fashion with high throughput and exacting reproducibility at low cost.

Claims

1. A method for coplanar integration of semiconductor IC devices comprising:

(a) providing segments having at least one edge having an abutting portion capable of abutting against a similar edge of a neighboring segment, each segment having on a top surface thereof at least one of the items selected from the group consisting of circuits, circuit elements, sensors, and input/output connections;

(b) arranging said segments on the surface of a flotation liquid such that the top surfaces of each segment are substantially coplanar;

(c) allowing said segments to be pulled together so as to mate abutting edges of neighboring segments to form a superchip;

(d) forming solid microbridges between neighboring segments to mechanically secure said superchip; and

(e) forming electrical interconnections between neighboring segments so as to interconnect various of said circuits, circuit elements, sensors, and input/output connections.

2. The method of claim 1 wherein said flotation liquid forms said solid microbridges by curing or polymerizing thereof.

3. The method of claim 1 wherein following said mating of abutting edges of neighboring segments said flotation liquid is withdrawn and a second liquid is introduced to replace said first liquid and is processed so as to form said solid microbridges.

4. The method of claim 1 wherein a flat reference surface is provided for aligning said top surfaces of said segments.

5. The method of claim 4 wherein said segments are placed at the interface of two liquids having dissimilar densities or surface tensions such that the top surface of said segments is coplanar with said interface, with a first liquid supporting said segments in a coplanar fashion and a second liquid forming an interfacial surface tension with said first liquid such that said segments are drawn together.

6. The method of claim 5 wherein said second liquid is subsequently solidified to form said microbridges.

7. The method of claim 4 wherein said top surfaces of said segments are placed in contact with a solid, flat reference surface.

8. The method of claim 1 wherein said flotation liquid is characterized by the properties of having (1) sufficient surface tension to pull said segments together, (2) sufficiently low viscosity to enable the segments to move facilely under the influence of said surface tension, and (3) a density high enough such that the surface tension forces themselves keep said segments from sinking if they are denser than said flotation liquid.

9. The method of claim 8 wherein said flotation liquid is selected from the group consisting of water, alcohols, pyrrolidones, polyimides, polyimide precursors, liquid epoxies, UV- or heat-curable liquid polymers, silica solutions, molten paraffin, and low melting point metals having a melting point below that of said segment.

10. The method of claim 1 wherein said microbridge material is characterized by the properties of semiconductor electronic-grade ionic and particulate cleanliness and is a dielectric.

11. The method of claim 10 wherein said microbridge material is selected from the group consisting of polyimides, polyimide precursors, epoxies, UV- or heat-curable polymers, and silica.

12. The method of claim 1 wherein said segments are placed in a container and a sufficient amount of said flotation liquid is added to float said segments.

13. The method of claim 1 wherein said segments are arranged on the surface of said flotation liquid contained in a container.

14. The method of claim 1 wherein individual superchips are inserted into cavities formed in mother substrates, microbridges formed therebetween, and interconnects formed between said superchips and said substrate to various of circuits, circuit elements, sensors, and input/output connections thereon.

15. The method of claim 1 wherein at least one individual segment is inserted into at least one cavity formed in a mother substrate, microbridges formed between said segments and between said segments and said substrate, and interconnects formed between said segments and said substrate to various of circuits, circuit elements, sensors, and input/output connections thereon.

16. The method of claim 1 wherein said segments are hexagonal in shape.

17. The method of claim 1 wherein said segments are substantially rectangular in shape, with a slight chevroned side along mating edges.

18. A method for coplanar integration of semiconductor IC devices comprising:

(a) providing segments having at least one edge having an abutting portion capable of abutting against a similar edge of a neighboring segment, each segment having thereon at least one of the items selected from the group consisting of circuits, circuit elements, and connectors;

(b) arranging said segments on the surface of a flotation liquid;

(c) allowing said segments to be pulled together so as to mate abutting edges of neighboring segments;

(d) forming microbridges between neighboring segments by solidifying said flotation liquid; and

(e) forming conductive interconnections between neighboring segments.

19. The method of claim 18 wherein said flotation liquid forms solid microbridges by curing or polymerizing thereof.

20. The method of claim 18 wherein a flat reference surface is provided for aligning said top surfaces of said segments.

21. The method of claim 20 wherein said segments are placed at the interface of two liquids having dissimilar densities or surface tensions such that the top surface of said segments is coplanar with said interface, with a first liquid supporting said segments in a coplanar fashion and a second liquid forming an interfacial surface tension with said first liquid such that said segments are drawn together.

22. The method of claim 20 wherein said top surfaces of said segments are placed in contact with a solid, flat reference surface.

23. The method of claim 18 wherein said flotation liquid is selected from the group consisting of water, alcohols, pyrrolidones, polyimides, polyimide precursors, liquid epoxies, UV- or heat-curable liquid polymers, silica solutions, molten paraffin, and low melting point metals having a melting point below that of said segment.

24. The method of claim 18 wherein said microbridge material is selected from the group consisting of polyimides, polyimide precursors, epoxies, UV- or heat-curable polymer, and silica.

25. A method for coplanar integration of semiconductor IC devices comprising:

(a) providing segments having at least one edge having an abutting portion capable of abutting against a similar edge of a neighboring segment, each segment having on a top surface thereof at least one of the items selected from the group consisting of circuits, circuit elements, sensors, and input/output connections;

(b) forming wettable portions on said top surfaces which are made wettable to a flotation liquid;

(c) placing said segments on a first surface such that said top surfaces of said segments are face up;

(d) placing wetting drops of said flotation liquid such that said wettable portions of said top surface and said edges of each segment are wetted;

(e) arranging a reference surface to contact said top of said segments in cowetted contact therewith;

(f) urging said segments together so as to mate abutting edges of neighboring segments to form a superchip;

(g) forming microbridges between neighboring segments to mechanically secure said superchip; and

(h) forming electrical interconnections between neighboring segments so as to interconnect various of said of circuits, circuit elements, sensors, and input/output connections.

26. The method of claim 25 wherein said flotation liquid forms said microbridges by curing or polymerizing thereof.

27. The method of claim 25 wherein following said mating of abutting edges of neighboring segments said flotation liquid is withdrawn and a second liquid is introduced to replace said first liquid and is processed so as to form said microbridges.

28. The method of claim 25 wherein said flotation liquid is characterized by the properties of having sufficient surface tension to pull said segments together while also having sufficiently low viscosity to enable the segments to move facilely under the influence of said surface tension.

29. The method of claim 28 wherein said flotation liquid is selected from the group consisting of water, alcohols, pyrrolidones, polyimides, polyimide precursors, liquid epoxies, UV- or heat-curable liquid polymers, silica solutions, molten paraffin, and low melting point metals having a melting point below that of said segment.

30. The method of claim 25 wherein said microbridge material is characterized by the properties of semiconductor electronic-grade ionic and particulate cleanliness and is a dielectric.

31. The method of claim 30 wherein said microbridge material is selected from the group consisting of polyimides, polyimide precursors, epoxies, UV- or heat-curable polymers, and silica.

32. The method of claim 25 wherein a plurality of said segments combine to form said superchip.

33. The method of claim 32 wherein individual superchips are inserted into cavities formed in mother substrates, microbridges formed therebetween, and interconnects formed between said superchips and said substrate to various of circuits, circuit elements, sensors, and input/output connections thereon.

34. A method for coplanar integration of semiconductor IC devices comprising:

(a) providing segments having at least one edge having an abutting portion capable of abutting against a similar edge of a neighboring segment, each segment having on a top surface thereof at least one of the items selected from the group consisting of circuits, circuit elements, sensors, and input/output connections;

(b) placing said segments on a reference surface such that said top surfaces of said segments are face down to ensure coplanarity of said top surfaces;

(c) placing a flotation liquid such that spaces between neighboring segments are substantially filled therewith and said edges of said segments are wetted;

(d) allowing said segments to be drawn together so as to mate abutting edges of neighboring segments to form a superchip;

(e) forming microbridges between neighboring segments to mechanically secure said superchip; and

(f) forming electrical interconnections between neighboring segments so as to interconnect various of said of circuits, circuit elements, sensors, and input/output connections.

35. The method of claim 34 wherein said flotation liquid forms said microbridges by curing or polymerizing thereof.

36. The method of claim 34 wherein following said mating of abutting edges of neighboring segments said flotation liquid is withdrawn and a second liquid is introduced to replace said first liquid and is processed so as to form said microbridges.

37. The method of claim 34 wherein said flotation liquid is characterized by the properties of having sufficient surface tension to pull said segments together while also having sufficiently low viscosity to enable the segments to move facilely under the influence of said surface tension.

38. The method of claim 37 wherein said flotation liquid is selected from the group consisting of water, alcohols, pyrrolidones, polyimides, polyimide precursors, liquid epoxies, UV- or heat-curable liquid polymers, silica solutions, molten paraffin, and low melting point metals having a melting point below that of said segment.

39. The method of claim 34 wherein said microbridge material is characterized by the properties of semiconductor electronic-grade ionic and particulate cleanliness and is a dielectric.

40. The method of claim 39 wherein said microbridge material is selected from the group consisting of polyimides, polyimide precursors, epoxies, UV- and heat-curable polymers, and silica.

41. The method of claim 34 wherein individual superchips are inserted into cavities formed in mother substrates, microbridges formed therebetween, and interconnects formed between said superchips and said substrate to various of circuits, circuit elements, sensors, and input/output connections thereon.

42. The method of claim 34 wherein individual segments are inserted into cavities formed in mother substrates, microbridges formed therebetween, and interconnects formed between said segments and said substrate to various of circuits, circuit elements, sensors, and input/output connections thereon.