Method of manufacturing capacitor

• US 4,990,463 A
• Filed: 06/29/1989
• Issued: 02/05/1991
• Est. Priority Date: 07/05/1988
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Mori, Seiichi
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Thomas, Tom
• Application Number:
  US07/373,289
• Time in Patent Office: 586 Days
• Field of Search: 437/47, 437/52, 437/42, 437/60, 437/919, 437/233, 437/235, 437/228, 357/23.6, 357/51, 357/23.15
• US Class Current: 438/386
• CPC Class Codes: H01L 21/3211 Nitridation of silicon-containing layers
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: Y10S 438/954 Making oxide-nitride-oxide device

Abstract

In the invention, the thin natural oxide film formed on a surface of a first polycrystalline silicon layer containing an impurity diffused at a high concentration is transformed into a silicon nitride film by rapid nitriding. When the resultant structure is placed in a low-pressure CVD furnace to deposit a silicon nitride film, no natural oxide film is grown on the polycrystalline silicon layer. Hence, when the invention is applied to manufacture of a capacitor for a memory cell, the inter-layer insulative film of the capacitor is not too thick. As a result, a reliable capacitor suitable for micropatterning of elements can be formed between the first and second polycrystalline silicon layers.

Claims

1. A method of manufacturing a capacitor, comprising:

a first step of nitriding a surface of a first conductive layer, to form a first nitride or oxynitride film;

a second step of depositing a second nitride film on a surface of said first nitride film;

a third step of forming an insulating film on a surface of said second nitride film; and

a fourth step of depositing a second conductive layer on a surface of said insulating film.

2. A method according to claim 1, wherein a natural oxide film which is present on the surface of said first conductive layer is simultaneously nitrided in the first step.

3. A method according to claim 1, wherein each of said first and second conductive layers comprises a polycrystalline silicon layer.

4. A method according to claim 1, wherein the first step is performed by rapid thermal nitridation.

5. A method according to claim 1, wherein the second step is performed by low pressure chemical vapor deposition.

6. A method of manufacturing a capacitor, comprising the steps of:

forming a first silicon oxide film on a surface of a silicon semiconductor substrate of a first conductivity type;

depositing a first polycrystalline silicon layer on said first silicon oxide film;

doping an impurity of a second conductivity type into said first polycrystalline silicon layer;

forming a first silicon nitride or oxynitride film by nitriding a surface of said first polycrystalline silicon layer;

depositing a second silicon nitride film on said first silicon nitride film;

forming a second silicon oxide film on said second silicon nitride film;

depositing a second polycrystalline silicon layer on said second silicon oxide film; and

doping an impurity of the second conductivity type into said second polycrystalline silicon layer.

7. A method according to claim 6, wherein a natural oxide film which is present on the surface of said silicon semiconductor substrate of the first conductivity type is nitrided simultaneous with the formation of said first silicon nitride film.

8. A method according to claim 6, wherein the step of forming said first silicon nitride film is performed by rapid thermal nitridation.

9. A method according to claim 6, wherein said second silicon nitride film is deposited by low pressure chemical vapor deposition.

10. A method of manufacturing a capacitor, comprising the steps of:

forming a groove in a semiconductor substrate of a first conductivity type;

forming a first oxide film on an entire inner surface of said groove;

depositing a first impurity layer of a second conductivity type on said first oxide film;

forming a first nitride or oxynitride film by nitriding a surface of said first impurity layer;

depositing a second nitride film on said first nitride film;

forming a second oxide film on a surface of said second nitride film; and

depositing a second impurity layer of the second conductivity type on said second oxide film.

11. A method according to claim 10, wherein a natural oxide film which is present on a surface of said first impurity layer is nitrided simultaneous with the formation of said first nitride film.

12. A method according to claim 10, wherein the step of forming said first nitride film is performed by rapid nitriding.

13. A method according to claim 10, wherein the step of forming said second nitride film is performed by low pressure chemical vapor deposition.