Method and apparatus for evaluating strains in crystals

• US 4,990,779 A
• Filed: 06/06/1989
• Issued: 02/05/1991
• Est. Priority Date: 06/06/1989
• Status: Expired due to Fees

• Current Assignee: Nippon Steel Corporation
• Original Assignee: Nippon Steel Corporation
• Inventors: Funaki, Shuichi, Ohta, Kuniteru, Yoshitomi, Yasunari
• Primary Examiner(s): Berman, Jack I.
• Assistant Examiner(s): Nguyen, Kiet T.
• Application Number:
  US07/361,925
• Time in Patent Office: 609 Days
• Field of Search: 250/310, 250/311, 250/307, 250/306, 73/763, 73/774, 73/78
• US Class Current: 250/310
• CPC Class Codes: G01N 23/203 Measuring back scattering

Abstract

The strains in crystals are evaluated by quantifying the sharpness of an electron channeling pattern and determining changes in the quantified sharpness of the electron channeling pattern. There is such a close correlation between the sharpness of the electron channeling pattern and the strains in crystals that the latter can be evaluated in terms of changes in the former. An apparatus for evaluating strains in crystals comprises a scanning electron microscope having a function to form an electron channeling pattern and an image analyzer having a function to quantify the sharpness of an electron channeling pattern.

Claims

1. A method of evaluating the strains in crystals comprising the steps of:

irradiating beams of electrons on the surface of a specimen of a crystalline substance, the surface of the specimen being scanned with the electron beams whose angle of incidence ranges from an angle smaller than the Bragg angle to a larger one;

determining the intensity of secondary or back-scattered electrons discharged from the surface of the specimen;

forming an electron channeling pattern containing several pseudo-Kikuchi lines by recording the intensity of the secondary or back-scattered electrons in synchronism with the scanning signals of the electron beams;

determining the sharpness of the electron channeling pattern; and

evaluating the strain in the crystalline substance on the basis of a change in the sharpness of the electron channeling pattern.

2. A method of evaluating the strains in crystals according to claim 1, in which said electron channeling pattern is formed by a scanning electron microscope having an electron channeling pattern forming function.

3. A method of evaluating the strains in crystals according to claim 1, in which the brightness of said electron channeling pattern throughout the entire area thereof is differentiated with respect to the length thereof, using the ratio of an area showing higher derivatives for determining sharpness.

4. A method of evaluating the strains in crystals according to claim 1, in which the brightness of said electron channeling pattern throughout the entire area thereof is differentiated with respect to the length thereof, using the ratio of an area showing the highest derivatives for determining sharpness.

5. A method of evaluating the strains in crystals according to claim 1, in which the difference between the brightest and darkest portions throughout the entire area of said electron channeling pattern is used for determining sharpness.

6. A method of evaluating the strains in crystals according to claim 1, in which the ratio of an area in which the light and shade varies greatly to the whole area of said electron channeling pattern is used for determining sharpness.

7. A method of evaluating the strains in crystals according to claim 1, in which the magnitude of strain is determined by comparing the actually determined sharpness of said electron channeling pattern with a preliminarily determined sharpness curve representing strains in crystals.

8. An apparatus for evaluating strains in crystals comprising:

a scanning electron microscope forming an electron channeling pattern containing several pseudo-Kikuchi lines which comprises means for scanning the surface of a specimen with beams of electrons whose angle of incidence with respect to the crystal plane is varied from an angle smaller than the Bragg angle to a larger one, means for detecting secondary or back-scattered electrons and means for recording the intensity of secondary or back-scattered electrons in synchronism with the scanning signals of the electron beams;

an image analyzer having means for quantifying the sharpness of said electron channeling pattern formed by the scanning electron microscope; and

means for evaluating strain in the crystal based on change in the sharpness of said electron channeling pattern.