Light emitting semiconductor having a rear reflecting surface

• US 4,990,970 A
• Filed: 03/23/1990
• Issued: 02/05/1991
• Est. Priority Date: 01/16/1990
• Status: Expired due to Fees

• Current Assignee: General Motors Corporation (Motors Liquidation Co. GUC Trust)
• Original Assignee: General Motors Corporation (Motors Liquidation Co. GUC Trust)
• Inventors: Fuller, Brian K.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Crane, Sara W.
• Application Number:
  US07/498,113
• Time in Patent Office: 319 Days
• Field of Search: 372/45, 372/47, 372/48, 372/50, 372/17, 372/19, 372/60
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

A light emitting semiconducting structure is formed over a light reflecting surface using epitaxial growth techniques. The light reflecting surface is provided by an appropriate metal layer intermediately disposed between two dielectric layers, this multi-layer structure is disposed intermediate between an underlying substrate and the overlaying light emitting semiconducting components. The light reflecting surface provides enhanced photon reflectance for the light emitting device. The active region of the light emitting device is formed using epitaxial growth techniques.

Claims

1. A light emitting semiconducting structure comprising:

a substrate of appropriate material, conductivity, and cystallographic orientation;

patterned regions of a reflecting structure, said reflecting structure comprising a metal reflecting layer intermediately disposed between two dielectric layers;

epitaxially grown material from said substrate, said epitaxially grown material being provided continuously in at least one channel which contacts said substrate and laterally over said reflecting structure to form an active region; and

appropriate electrical contacts sufficient to provide a light emitting semiconductive structure overlaying said epitaxially grown active region.

3. A light emitting semiconducting structure as recited in claim 1 wherein said substrate is characterized by p-type conductivity and said electrical contacts are characterized by n-type conductivity.

2. A light emitting semiconducting structure comprising:

a substrate of gallium arsenide characterized by an n-type conductivity;

patterned regions of a reflecting structure, said reflecting structure comprising a gold or similar metal reflecting layer intermediately disposed between two masking layers preferably of aluminum oxide;

epitaxially grown material from the group consisting of boron, aluminum, indium, gallium, arsenic, phosphorus, nitrogen in the III-V family of light emitting compounds, and other III-VI, IV, and IV-VI light emitters, or gallium and arsenide, provided continuously in at least one channel which contacts said substrate and laterally over said reflecting structure to from an active region;

and appropriate p-type electrical contacts sufficient to provide the light emitting semiconductive structure overlaying said laterally grown active region.