Chemical vapor deposition reactor and method of operation

• US 4,993,358 A
• Filed: 07/28/1989
• Issued: 02/19/1991
• Est. Priority Date: 07/28/1989
• Status: Expired due to Term

• Current Assignee: Aviza Technology Inc (Sumitomo Corporation)
• Original Assignee: Watkins Johnson Co. (Qorvo, Inc.)
• Inventors: Mahawili, Imad
• Primary Examiner(s): Morgenstern, Norman
• Assistant Examiner(s): Owens, Terry J.
• Application Number:
  US07/386,903
• Time in Patent Office: 571 Days
• Field of Search: 118/715, 156/345, 156/643, 204/298, 427/248.1, 427/255.1, 427/255.2
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/45576 Coaxial inlets for each gas
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence

Abstract

A chemical vapor deposition (CVD) reactor and method are disclosed wherein a chamber, preferably configured for receiving a single wafer as a deposition substrate, has multiple gas inlet orifices and exhaust ports which are independently adjustable for dynamically varying and controlling directionality of local gas flow vectors toward and past the deposition substrate. The injection angle of reactant gas being introduced into the chamber is adjusted by baffles for statically deflecting gas flow entering the chamber. Adjustment of the gas inlet orifices and/or exhaust ports and adjustment of the injection angle for the reactant gas is selected for achieving enhanced coating uniformity, and conformality of deposition if necessary or desired, on the substrate.

Claims

1. A chemical vapor deposition (CVD) reactor comprising

a housing forming a closed cylindrical chamber suitable for maintaining a deposition substrate in an environment of selected pressure,

means arranged at one axial end of the cylindrical chamber for supporting the substrate,

a wall spaced apart from the support means and arranged at the other axial end of the cylindrical chamber,

means for introducing reactant gas into the chamber,

multiple exhaust vents spaced apart from each other and arranged in communication with the cylindrical chamber about its periphery, and

valve means operatively coupled with the individual exhaust vents and sequentially operable for inducing a selected pattern of flow vectors for the reactant gas in the chamber adjacent the deposition substrate in order to enhance deposition uniformity and/or conformance.

2. The CVD reactor of claim 1 further comprising at least one additional exhaust vent arranged in an axially central portion of the end wall, a similar valve means being operatively coupled therewith for inducing the selected pattern of flow vectors for the reactant gas.

3. The CVD reactor or claim 2 wherein the valve means are operable for sequentially opening and closing selected combinations of the exhaust vents in various combinations for inducing selected reactant gas flow vector patterns including clockwise swirling motion, counterclockwise swirling motion, radially inward motion, radially outward motion and combinations thereof.

4. The CVD reactor of claim 3 wherein the means for introducing the reacted gas comprise restrictive orifices communicating at least one reactant gas manifold with the chamber.

5. The CVD reactor of claim 4 further comprising multiple manifolds, the multiple manifolds being annular formed in radially spaced relation with each other adjacent the end wall, and a plurality of circumferentially arranged orifices at multiple radial locations communicating each annular manifold with the chamber.

6. The CVD reactor of claim 5 further comprising regulator means for separately communicating each annular manifold with a gas source or with a vacuum source.

7. The CVD reactor of claim 6 further comprising adjustable baffle means operatively coupled with the orifices for adjusting the injection angle of gas introduced into the chamber.

8. The CVD reactor of claim 7 wherein the baffle means are annularly formed adjacent the circumferentially arranged orifices for each annular manifold.

9. The CVD reactor of claim 4 further comprising adjustable baffle means operatively coupled with the orifices for adjusting the injection angle of gas introduced into the chamber.

10. The CVD reactor of claim 1 further comprising adjustable baffle means operatively coupled with the means for introducing reactant gas into the chamber for adjusting the injection angle of gas introduced into the chamber.

11. The CVD reactor of claim 1 wherein the means for introducing the reactant gas comprise restrictive orifice communicating at least one reactant gas manifold with the chamber.

12. The CVD reactor of claim 11 further comprising multiple manifolds, the multiple manifolds being annularly in radially spaced relation with each other adjacent the end wall, and a plurality of circumferentially arranged orifices at multiple radial locations communicating each annular manifold with the chamber.

13. The CVD reactor of claim 12 further comprising regulator means for separately communicating each annular manifold with a gas source or with a vacuum source.

14. The CVD reactor of claim 1 wherein the chamber and the means for supporting the substrate are configured for receiving a single wafer as the substrate.

15. A chemical vapor deposition (CVD) reactor comprising

a housing forming a chamber suitable for maintaining a deposition substrate in an environment of selected pressure,

means for supporting the deposition substrate in the chamber,

means for introducing reactant gas into the chamber,

multiple exhaust vents spaced apart from each other and arranged in communication with the chamber, and

valve means operatively coupled with the individual exhaust vents and sequentially operable for inducing a selected pattern of flow vectors for the reacted gas in the chamber adjacent the substrate in order to enhance deposition uniformity and/or conformance.

16. The CVD reactor of claim 15 wherein the chamber is cylindrical, the multiple exhaust vents being arranged about the cylindrical periphery of the chamber and further comprising at least one additional exhaust vent arranged in a central portion of the chamber, similar valve means being operatively coupled therewith for inducing the selected pattern of flow vectors for the reactant gas.

17. The CVD reactant of claim 16 wherein the valve means are operable for sequentially opening and closing selected combinations of the exhaust vents in various combinations for inducing selected reactant gas flow vector patterns including clockwise swirling motion, counterclockwise swirling motion, radially inward motion, radially outward motion and combinations thereof.

18. The CVD reactor of claim 17 wherein the means for introducing reactant gas comprise restrictive orifices communicating at least one reactant gas manifold with the chamber.

19. The CVD reactor of claim 18 further comprising multiple annular manifolds and a plurality of circumferentially arranged orifices at multiple radial locations communicating each annular manifold with the chamber.

20. The CVD reactor of claim 19 further comprising regulator means for separately communicating each manifold with a gas source or with a vacuum source.

21. The CVD reactor of claim 19 further comprising adjustable baffle means operatively coupled with the orifices for adjusting the injection angle of gas introduced into the chamber.

22. The CVD reactor of claim 15 wherein the means for introducing the reactant gas comprise restrictive orifices communicating at least one reactant gas manifold with the chamber.

23. The CVD reactor of claim 22 further comprising regulator means for communicating each manifold with a gas source or with a vacuum source.

24. The CVD reactor of claim 15 wherein the chamber and the means for supporting the substrate are configured for receiving a single wafer as the substrate.

25. A chemical vapor deposition (CVD) method comprising the steps of

arranging a deposition substrate in a chamber at a selected pressure,

introducing reactant gas into the chamber,

connecting multiple exhaust vents in spaced apart relation with each other and in communication with the chamber, and

selectively regulating communication of the exhaust vents with the chamber for inducing a selected pattern of flow vectors for the reactant gas in the chamber adjacent the substrate in order to enhance deposition uniformity and/or conformance.

26. The CVD method of claim 25 wherein the chamber is generally cylindrical and the multiple exhaust vents include a plurality of vents arranged about the periphery of the cylindrical chamber and at least one centrally arranged exhaust vent, communication of the exhaust vents with the chamber being selectively regulated for sequentially opening and closing selected combinations of the exhaust vents in various combinations for inducing selected reactant gas flow vector patterns including clockwise swirling motion, counterclockwise swirling motion, radial inward motion, radial outward motion and combinations thereof.

27. The CVD method of claim 26 wherein spaced apart restrictive orifices are provided for introducing reactant gas into the chamber and further comprising the step of communicating selected combinations of the orifices with a gas source or gas sources or with a vacuum source.

28. The CVD method of claim 25 further comprising the step of mechanically adjusting the injection angle of reactant gas introduced into the chamber.

29. The CVD method of claim 25 wherein the chamber is configured for receiving and supporting a single wafer as the deposition substrate.