Method of manufacturing a semiconductor device having a silicon carbide layer
First Claim
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1. A method of forming a semiconductor device on a silicon carbide layer, comprising the steps of:
- defining at least one device region and associated device isolation regions in the silicon carbide layer;
selectively introducing an impurity into the device isolation regions of the silicon carbide layer at a concentration level sufficient to impart an enhanced rate of oxidation characteristic to said defined, device isolation regions, relatively to the rate of oxidation characteristic of the remainder of the silicon carbide layer including each said associated device region;
oxidizing the silicon carbide layer by annealing in an oxidizing atmosphere and thereby forming an oxide layer on the silicon carbide layer, the oxide layer so formed in the device isolation regions being substantially thicker than that in each said associated device region and extending to a sufficient depth in the silicon carbide layer thereby to afford electrical isolation of a device to be formed in the associated device region; and
forming a semiconductor device in the device region.
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Abstract
A method of forming a semiconductor device on a silicon carbide layer comprises steps of introducing an impurity into selected parts of the silicon carbide layer, and oxidizing the silicon carbide layer by annealing in an atmosphere containing oxygen.
35 Citations
12 Claims
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1. A method of forming a semiconductor device on a silicon carbide layer, comprising the steps of:
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defining at least one device region and associated device isolation regions in the silicon carbide layer; selectively introducing an impurity into the device isolation regions of the silicon carbide layer at a concentration level sufficient to impart an enhanced rate of oxidation characteristic to said defined, device isolation regions, relatively to the rate of oxidation characteristic of the remainder of the silicon carbide layer including each said associated device region; oxidizing the silicon carbide layer by annealing in an oxidizing atmosphere and thereby forming an oxide layer on the silicon carbide layer, the oxide layer so formed in the device isolation regions being substantially thicker than that in each said associated device region and extending to a sufficient depth in the silicon carbide layer thereby to afford electrical isolation of a device to be formed in the associated device region; and forming a semiconductor device in the device region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification