RAM/ROM hybrid memory architecture

• US 4,995,004 A
• Filed: 05/15/1989
• Issued: 02/19/1991
• Est. Priority Date: 05/15/1989
• Status: Expired due to Term

• Current Assignee: Maxim Integrated Products, Inc. (Analog Devices, Inc.)
• Original Assignee: Dallas Semiconductor Corporation (Analog Devices, Inc.)
• Inventors: Lee, Robert D.
• Primary Examiner(s): Popek, Joseph A.
• Application Number:
  US07/352,142
• Time in Patent Office: 645 Days
• Field of Search: 365/189.11, 365/190, 365/202, 365/203, 365/154, 365/225.7, 365/96, 365/104
• US Class Current: 365/189.11
• CPC Class Codes: G06F 3/0383 Signal control means within the pointing device
• CPC Class Codes: G06F 3/04897 Special input arrangements or commands for improving display capability
• CPC Class Codes: G06K 19/047 the record carrier being shaped as a coin or a gambling token
• CPC Class Codes: G06K 19/0706 the battery being replaceable
• CPC Class Codes: G06K 19/07743 External electrical contacts
• CPC Class Codes: G06K 7/0021 for reading/sensing record carriers having surface contacts
• CPC Class Codes: G06K 7/0086 the connector comprising a circuit for steering the operations of the card connector
• CPC Class Codes: G11C 5/00 Details of stores covered by group G11C11/00
• CPC Class Codes: G11C 5/066 Means for reducing external access-lines for a semiconductor memory clip, e.g. by multiplexing at least address and data signals
• CPC Class Codes: G11C 7/24 Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
• CPC Class Codes: G11C 8/20 Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access

Abstract

An integrated circuit memory which includes at least some RAM/ROM hybrid columns. The RAM/ROM hybrid cells operate as normal SRAM cells forever, unless and until they are programmed to operate as ROM cells. Thus users who need the extra security permitted by ROM encoding can have this capability, while users who do not need ROM encoding can use off-the-shelf parts as RAM only.

Claims

1. An integrated circuit memory, comprising:

an array of memory cells arranged in rows and columns, with word lines running along rows of said array;

word line driver circuitry, connected to drive a selected one of said word lines when one of said cells in said selected row is sought to be accessed;

a sense amplification and output stage, connected to amplify the output of a selected one of said cells, and column selection circuitry, configured to connect the output of a selected one of said cells to said sense amplification and output stage;

wherein each said cell in said array includes;

a latch having first and second nodes,

two pass transistors, controlled by a respective one of said word lines, and operable to connect said first and second nodes of said latch to a respective bit line pair;

and wherein at least some of said cells in said array each also include;

nonvolatile shorting elements, connected to pull one of said nodes of said latch toward a constant potential.

2. The integrated circuit of claim 1, wherein said nonvolatile shorting elements comprise laser-programmable fuses.

3. The integrated circuit of claim 1, wherein said nonvolatile shorting elements comprise a pair of fuse elements, which are respectively in series with a pair of switching transistors.

4. The integrated circuit of claim 1, wherein said nonvolatile shorting elements comprise a pair of fuse elements, which are respectively in series with a pair of switching transistors, and multiple ones of said switching transistors are commonly controlled by a signal derived from a further nonvolatile storage element.

5. The integrated circuit of claim 1, further comprising a respective pair of switching transistors which are respectively in series with ones of said pairs of shorting elements in said cells.

6. The integrated circuit of claim 1, further comprising a respective pair of switching transistors which are respectively in series with ones of said pairs of shorting elements in said cells, wherein multiple ones of said switching transistors are commonly controlled by a signal derived from a further nonvolatile storage element.

7. The integrated circuit of claim 1, wherein said nonvolatile shorting elements comprise EPROM transistors.

8. The integrated circuit of claim 1, wherein some ones of said cells include said nonvolatile shorting elements, and other ones of said cells do not include said nonvolatile shorting elements.

9. The integrated circuit of claim 1, wherein, in every one of said columns, either all ones of said cells include said nonvolatile shorting elements, or else all ones of said cells do not include said nonvolatile shorting elements.

10. The integrated circuit of claim 1, wherein said word line driver circuitry and said sense amplification and output stage are configured to operate on a power supply voltage of less than 2 Volts, and which is less than the sum of NMOS and PMOS threshold voltages.

11. An integrated circuit memory, comprising:

an array of memory cells arranged in rows and columns, with word lines running along rows of said array;

word line driver circuitry, connected to drive a selected one of said word_-- lines when one of said cells in said selected row is sought to be accessed;

a sense amplification and output stage, connected to amplify the output of a selected one of said cells, and column selection circuitry, configured to connect the output of a selected one of said cells to said sense amplification and output stage;

wherein each said cell in said array includes;

a latch having first and second nodes,

two pass transistors, controlled by a respective one of said word lines, and operable to connect said first and second nodes of said latch to a respective bit_-- line pair;

and wherein at least some of said cells in said array each also include;

a first fuse element, and a first switching transistor in series with said first fuse element, connected between said first node of said latch and a first substantially constant potential, and

a second fuse element, and a second switching transistor in series with said second fuse element, connected between said second node of said latch and a second substantially constant potential.

12. The integrated circuit of claim 11, wherein said fuse elements consist essentially of laser-programmable fuses.

13. The integrated circuit of claim 11, wherein multiple ones of said switching transistors, in multiple ones of said cells, are commonly controlled by a signal derived from a further nonvolatile storage element.

14. The integrated circuit of claim 11, wherein some ones of said cells include said fuse elements, and other ones of said cells do not include said fuse elements.

15. The integrated circuit of claim 11, wherein, in each respective one of said columns, either all ones of said cells include said fuse elements, or else all ones of said cells do not include said fuse elements.

16. The integrated circuit of claim 11, wherein said circuit is a CMOS circuit including NMOS and PMOS devices and wherein said word line driver circuitry and said sense amplification and output stage are configured to operate on a power supply voltage which is less than 2 volts and also less than the sum of an NMOS device threshold voltage plus a PMOS device threshold voltage.

17. An integrated circuit memory cell, comprising:

a latch having first and second nodes, comprising

a first NMOS driver transistor, having a source connected to pull down said first node, and a gate connected to said second node;

a second NMOS driver transistor, having a source connected to pull down said second node, and a gate connected to said first node;

first and second load elements, connected to pull up said first and second nodes respectively;

two pass transistors, operable to connect said first and second nodes, repectively, to a bit_-- line pair;

a first fuse element, and a first switching transistor in series with said first fuse element, connected between said first node of said latch and a ground, and

a second fuse element, and a second switching transistor in series with said second fuse element, connected between said second node of said latch and said ground.

18. The cell of claim 17, wherein said load elements consist essentially of PMOS transistors.

19. The cell of claim 17, wherein said pass transistors are NMOS transistors.

20. The cell of claim 17, wherein said pass transistors are NMOS transistors, and have approximately the same gate width to length ratios as said switching transistors.