Silicon-based rib waveguide optical modulator

• US 4,997,246 A
• Filed: 12/21/1989
• Issued: 03/05/1991
• Est. Priority Date: 12/21/1989
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: May, Paul G., Iyer, Subramanian S.
• Primary Examiner(s): Lee, John D.
• Assistant Examiner(s): BARNS, STEPHEN
• Application Number:
  US07/456,006
• Time in Patent Office: 439 Days
• Field of Search: 350/96.11, 350/96.12, 350/96.13, 350/96.14
• US Class Current: 385/2
• CPC Class Codes: G02F 1/0152 using free carrier effects, e.g. plasma effect
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 1/212 Mach-Zehnder type
• CPC Class Codes: G02F 1/2257 the optical waveguides being made of semiconducting material
• CPC Class Codes: G02F 2202/105 single crystal Si

Abstract

An optical modulator [30] includes a waveguide region having, for radiation of a predetermined wavelength such as 1.3 microns, a variable optical transmittance characteristic. The optical transmittance characteristic is a function of a difference between an index of refraction of a first region [36] comprised of silicon having a first type of electrical conductivity and an index of refraction of a second adjacent region [34] comprised of an insulator such as a silicon dioxide. The modulator further includes a third region [38], also comprised of silicon, disposed adjacent to the first region. The third region has a second type of electrical conductivity for forming a p-n junction with the first region. Charge carriers are injected into the first region for varying the index of refraction thereof such that the optical transmittance characteristic of the waveguide region is varied.

Claims

1. An optical modulator comprising a waveguide region, the waveguide region having, for radiation of a predetermined wavelength, an optical transmission characteristic that is a function of an index of refraction of a first region comprised of silicon and an index of refraction of a second adjacent region comprised of an insulator, the waveguide region being confined substantially within the first region, wherein the first region is differentiated into a plurality of adjacent regions comprised of differing electrical conductivity type material for defining a three terminal electrical device, the three terminal electrical device operating to inject charge carriers into the first region for varying the index of refraction thereof such that the optical transmission characteristic of the waveguide region is varied.

2. An optical modulator as set forth in claim 1 wherein the second region is comprised of SiO₂.

3. An optical modulator as set forth in claim 1 wherein the predetermined wavelength is approximately 1.3 microns.

4. An optical modulator as set forth in claim 1 wherein the first and the second p-n junctions are located within an upstanding rib structure.

5. An optical modulator as set forth in claim 1 wherein the three terminal electrical device is comprised of a lateral bipolar transistor.

6. An optical modulator as set forth in claim 1 wherein an injected carrier density of approximately 10¹⁸ cm^-3 within the first region results in an effective index of refraction change in the waveguide region of approximately 0.1%.

7. An optical modulator as set forth in claim 1 wherein the optical modulator is fabricated as a portion of an integrated circuit device having a substrate comprised of silicon, the optical modulator modulating, in accordance with an electrical signal coupled to three terminal electrical device, optical radiation passing through a portion of the integrated circuit device.

8. An optical modulator as set forth in claim 7 wherein the optical modulator is disposed within one arm of a Mach-Zender type intensity modulator.

9. An optical modulator as set forth in claim 1 wherein the modulator is fabricated as a portion of an integrated circuit device for modulating, in accordance with an electrical signal coupled to a base of the transistor device, optical radiation passing through a portion of the integrated circuit device.

10. An optical modulator as set forth in claim 9 wherein the transistor device is an n-p-n or a p-n-p device.

11. An optical modulator comprising a waveguide region, the waveguide region having, for radiation of a predetermined wavelength, an optical transmission characteristic that is a function of an index of refraction of a first region, comprised of silicon having a first type of electrical conductivity, and an index of refraction of a second adjacent region comprised of an insulator, the waveguide region being confined at least partially within the first region, the modulator further comprising a third region also comprised of silicon disposed adjacent to the first region such that the first region is interposed between the second and the third regions, the third region including a plurality of p-n junctions vertically disposed one above another for injecting charge carriers into the first region for varying the index of refraction thereof such that the optical transmission characteristic of the waveguide region is varied.

12. An optical modulator as set forth in claim 11 wherein the predetermined wavelength is approximately 1.3 microns.

13. An optical modulator as set forth in claim 11 wherein the third region includes an upstanding rib structure disposed upon the first region.

14. An optical modulator as set forth in claim 11 wherein the modulator is fabricated as a portion of an integrated circuit device for modulating, in accordance with an electrical signal coupled to the plurality of p-n junctions, optical radiation passing through a portion of the integrated circuit device.

15. An optical modulator as set forth in claim 11 wherein a carrier density of approximately 10¹⁸ cm^-3 within the first region results in an effective index of refraction change in the waveguide region of approximately 0.1%.

16. An optical modulator as set forth in claim 11 and further comprising a first electrically conductive region coupled in common to the p-type material in each of the plurality of p-n junctions and a second electrically conductive region coupled in common to the n-type material in each of the plurality of p-n junctions.

17. A interferometer having at least two optical transmission paths, a first one of the optical transmission paths comprising:

a waveguide region having, for radiation of a predetermined wavelength, an optical transmission characteristic that is a function of an index of refraction of a first region comprised of silicon and an index of refraction of an underlying region comprised of an insulator, the waveguide region being confined substantially within the first region, the first region being differentiated into a plurality of adjacent regions comprised of differing electrical conductivity type material for defining a three terminal electrical device, the three terminal electrical device operating to inject charge carriers into the first region for varying the index of refraction thereof such that the optical transmission characteristic of the waveguide region is varied.

18. An interferometer as set forth in claim 17 wherein the three terminal electrical device is comprised of a pnp or an npn lateral bipolar transistor.