Method of detecting an end point of surface treatment

• US 4,998,021 A
• Filed: 11/17/1989
• Issued: 03/05/1991
• Est. Priority Date: 11/18/1988
• Status: Expired due to Fees

• Current Assignee: SCREEN Holdings Co., Ltd.
• Original Assignee: SCREEN Holdings Co., Ltd.
• Inventors: Mimasaka, Masahiro
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Messinger, Michael
• Application Number:
  US07/438,668
• Time in Patent Office: 473 Days
• Field of Search: 250/560, 356/357, 356/382, 356/369, 156/626
• US Class Current: 250/559.28
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer
• CPC Class Codes: G03F 7/3028 characterised by means for on-wafer monitoring of the processing

Abstract

A method of detecting an end point of surface treatment of a wafer includes the steps of: projecting coherent light onto an upper surface of the wafer provided with a layer to be treated; receiving superposed light caused by interference of light reflected on a surface of the layer to be treated and on the other surface thereof and converting it to a photoelectric signal; sampling the photoelectric signal; detecting a first point where a variation range caused by the interference in the sampled data becomes smaller than a predetermined value; detecting a second point where an extreme value of the variation of the photoelectric signal caused by the interference occurs prior to the first point; and determining the end point of treatment by prescribed calculation using the second point as a reference point. The detection of the first point may be incorrect depending on the detection conditions. However, the second point prior to the first point is detected in a relatively stable manner irrespective of the detecting conditions. Thus, since the end point of treatment is determined by the prescribed calculation using the second point as a reference point, the end point of treatment is detected correctly and with good repeatability.

Claims

1. A method of accurately determining an end point of treatment, comprising the steps of:

(A) holding a wafer, said wafer having a main surface and a layer to be treated, said lever being formed in advance on said main surface;

(B) supplying treatment solution on said layer and thereby decreasing the thickness of said layer;

(C) projecting coherent light on said lever, a part of said coherent light being reflected on a surface of said layer, another part of said coherent light being reflected on said main surface, and said parts of said coherent light interfering with each other to form superposed light, the intensity of said superposed light having a variation which is cyclical between extreme values as the thickness of said lever decreases and which then becomes smaller than a certain value;

(D) receiving said superposed light and outputting a photoelectric signal, the photoelectric signal being representative of the intensity of said superposed light such that said photoelectric signal has a variation which is cyclical between extreme values and which then becomes smaller than a predetermined value;

(E) sampling said photoelectric signal and thereby obtaining sampled data;

(F) detecting a first point of time at which the variation of said photoelectric signal becomes smaller than said predetermined value;

(G) thereafter determining a second point of time corresponding to the occurrence of the last of said extreme values of said photoelectric signal; and

(H) determining said end point of treatment by prescribed calculation using said second point as a reference point.

2. A method of determining an end point of treatment in accordance with claim 1, wherein

said last extreme value is a maximum value.

3. A method of determining an end point of treatment in accordance with claim 1, wherein

said step (H) includes the step of

(I) determining said end point of treatment by multiplying time from a start of treatment to said second point by a predetermined number.

4. A method of determining an end point of treatment in accordance with claim 3, wherein

said step (H) further includes the step of

(J) determining a new end point of treatment by changing said determined end point of treatment forward or backward by a predetermined period.

5. A method of determining an end point of treatment in accordance with claim 1, wherein

said last extreme value is a minimal value.

6. A method of determining an end point of treatment in accordance with claim 1, further comprising the step of

smoothing said sampled data.

7. A method of determining an end point of treatment in accordance with claim 6, further comprising the step of

calculating a primary difference for each predetermined unit time with respect to said smoothed data.

8. A method of determining an end point of treatment in accordance with claim 7, further comprising the step of

calculating a secondary difference for each said unit time with respect to said smoothed data.

9. A method of determining an end point of treatment in accordance with claim 8, wherein

said step (G) further includes the step of

detecting a point prior to said first point, where the sign of said primary difference changes for the last time from a first sign to a second sign different from said first sign and an absolute value of said secondary difference becomes a predetermined value or more.

10. A method of determining an end point of treatment in accordance with claim 9, wherein

said first sign is minus and said second sign is plus.

11. A method of determining an end point of treatment in accordance with claim 10, wherein

said said secondary difference is a positive value.

12. A method of determining an end point of treatment in accordance with claim 9, wherein

said first sign is plus and said second sign is minus.

13. A method of determining an end point of treatment in accordance with claim 12, wherein

said second difference is a negative value.

14. A method of determining an end point of treatment in accordance with claim 1, wherein

said layer to be treated is a photoresist layer.

15. A method of determining an end point of treatment in accordance with claim 14, wherein

said treatment solution is for developing said photoresist layer.