Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material

• US 4,999,314 A
• Filed: 04/04/1989
• Issued: 03/12/1991
• Est. Priority Date: 04/05/1988
• Status: Expired due to Term

• Current Assignee: Remote Access LLC (Intellectual Ventures LLC)
• Original Assignee: Thomson-CSF
• Inventors: Karapiperis, Leonidas, Pribat, Didier
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US07/333,016
• Time in Patent Office: 707 Days
• Field of Search: 148/DIG. 26, 148/50, 148/97, 148/117, 148/143, 148/150, 148/163, 156/610-615, 427/248.1, 427/252, 427/255.1, 427/255.2, 437/67, 437/69, 437/62, 437/72, 437/81, 437/80, 437/83, 437/89, 437/90, 437/99, 437/915, 437/976
• US Class Current: 438/481
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02549 Antimonides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/76248 using lateral overgrowth techniques, i.e. ELO techniques
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: Y10S 148/026 Deposition thru hole in mask
• CPC Class Codes: Y10S 148/05 Etch and refill
• CPC Class Codes: Y10S 438/933 Germanium or silicon or Ge-Si on III-V

Abstract

In a method for the fabrication of a layer of a monocrystalline semiconducting layer on a layer of insulating material, an epitaxial growth is achieved in a cavity closed by layers of dielectric material, using a seed of monocrystalline semiconducting material of a substrate. The growth takes place first of all, vertically, perpendicularly to the seed, and then horizontally in the plane of the cavity. This method thus enables a three-dimensional integration of semiconductor components.

Claims

1. A method for the fabrication of a thin monocrystalline layer of a semiconducting material, through growth by chemical vapor deposition (CVD), wherein crystal growth is initiated on at least one seed having a chemical composition which is the same or is different from that of the semiconducting material of the thin layer to be obtained, said crystal growth being confined within a space located between two confinement layers each made of a material different from the semiconducting material of the thin layer in such a way that there can be neither nucleation nor deposition of semiconducting material on exposed surfaces of the two confinement layers, the space between the two confinement layers defining the thickness of the semiconductor monocrystalline thin layer to be obtained,

wherein making the seed of monocrystalline semiconducting material comprises the steps of:

depositing, on a substrate, of a first confinement layer;

etching in the first confinement layer at least one aperture;

selectively growing a first semiconducting material, the first semiconducting material being monocrystalline in the aperture and polycrystalline on the first confinement layer; and

covering the first semiconducting material by a second confinement layer in which at least one aperture is made and the polycrystalline semiconducting material is removed therethrough.

2. A fabrication method according to claim 1, wherein the space is defined by adjacent faces of the two confinement layers, the seed communicating with the space, the growth of the monocrystalline material being done initially in a direction perpendicular to a first plane defined by at least one of the two confinement layers until it reaches at least one of the faces or the first plane, the growth then continuing in the space, in a first predefined direction, between the two confinement layers.

3. A fabrication method according to claim 2, wherein the seed communicates with the space, either by at least one conduit made of a material of the same type as that of the two confinement layers or by a lateral aperture which may be blocked by faulty, monocrystalline, semiconducting material.

4. A fabrication method according to claim 2 wherein, after said thin layer of monocrystalline material is obtained, an aperture is made in one of said confinement layers, said aperture is being oriented in a direction which is substantially parallel to a trace of planes of residual faults in either of planes corresponding to surfaces of the confinement layers, the monocrystalline material being partly removed between the two layers of confinement, at least one seed of this material being preserved, another monocrystalline growth being made between the two confinement layers in a direction of growth which is substantially perpendicular to the trace of the residual planes of the faults in either of the planes corresponding to the surface of the confinement layers.

5. A method according to claim 1, wherein the etching of at least one aperture in the first confinement layer also etches an aperture in the substrate.

6. A method for the fabrication of a thin monocrystalline layer of a semiconducting material, through growth by chemical vapor deposition (CVD) wherein crystal growth is initiated on at least one seed having a chemical composition which is the same or is different from that of the semiconducting material of the thin layer to be obtained, said crystal growth being confined within a space located between two confinement layers each made of a material different from the semiconducting material of the thin layer in such a way that there can be neither nucleation nor deposition of semiconducting material on exposed surfaces of the two confinement layers, the space between the two confinement layers defining the thickness of the semiconductor monocrystalline thin layer to be obtained, said method comprising the following steps:

a first step for making a first layer of insulating material on the monocrystalline semiconducting substrate;

a second step for etching first apertures in the first layer of insulating material;

a third step for making, by CVD, a first layer of semiconducting material in the first apertures and on parts of the first layer of insulating material that remain after the previous etching step, said first layer of semiconducting material being polycrystalline on the first layer of insulating material;

a fourth step for making a second layer of an insulating material on the first layer of semiconducting material;

a fifth step for etching, in the second layer of insulating material, at least one second aperture ending in a monocrystalline part of the first layer of semiconducting material;

a sixth step for oxidizing the monocrystalline part of the first layer of semiconducting material exposed in the fifth step;

a seventh step for etching, in the second layer of insulating material, at least one third aperture ending on a polycrystalline part of the first layer of semiconductor material;

an eighth step for chemically attacking, through the third aperture, the polycrystalline part of the first layer of semiconducting material so as to eliminate all the polycrystalline part of the first layer of semiconducting material, said attacking process being continued to etch and remove at least some of the monocrystalline part of the first layer of semiconducting material so as to reach and etch the monocrystalline substrate beneath the level of an upper face of the first layer of insulating material; and

a ninth step for growing, by selective epitaxy, through chemical vapor deposition, a second monocrystalline semiconductor material, in a space etched during the eighth step, said growth being achieved along a first direction of growth.

7. A method according to claim 6, wherein the fifth step is preceded by a step for depositing a non-oxidizing material, the fifth step being performed also in the non-oxidizing material.

8. A method according to claim 6, further comprising:

a tenth step for removing the second layer of insulating material.

9. A method according to claim 7, further comprising:

an eleventh step for making, on the entire structure, a third layer of insulating material followed by etching a fourth aperture in said third layer of insulating material which is oriented in parallel to at least one trace, in a plane of one of the confinement layers, of at least one fault plane existing in the second monocrystalline semiconducting material, and which bares the second monocrystalline semiconducting material obtained in the ninth step;

a twelfth step for attacking and removing, through said fourth aperture, a portion of the second monocrystalline semiconducting material; and

a thirteenth step for growing a third monocrystalline semiconducting material in a space defined during the twelfth step.

10. A method according to claim 9, further comprising:

a fourteenth step for removing the third layer of insulating material made during the eleventh step, whereafter the eleventh, twelfth and thirteenth steps are repeated in providing, during the eleventh step, for an aperture oriented in parallel to another trace in a confinement plane of another type of fault plane existing in the second layer of monocrystalline, semiconducting material.

11. A method according to claim 9, further comprising:

a fourteenth step for removing the third layer of insulating material covering the structure; and

a fifteenth step for removing, in the third layer of semiconducting material, zones of semiconducting material having dislocations and other extended faults.

12. A method for the fabrication of a thin monocrystalline layer of a semiconducting material, through growth by chemical vapor deposition (CVD) wherein crystal growth is initiated on at least one seed having a chemical composition which is the same or is different from that of the semiconducting material of the thin layer to be obtained, said crystal growth being confined within a space located between two confinement layers each made of a material different from the semiconducting material of the thin layer in such a way that there can be neither nucleation nor deposition of semiconducting material on exposed surfaces of the two confinement layers, the space between the two confinement layers defining the thickness of the semiconductor monocrystalline thin layer to be obtained, comprising the following steps:

a first step for making, on a substrate, at least one band of dielectric material;

a second step for coating the at least one band by a material displaying a selectivity of chemical attack with respect to the semiconducting materials and dielectric materials;

a third step for coating the substrate and coated bands by an encapsulating material;

a fourth step for making apertures in the encapsulating material on top of the at least one band of dielectric material;

a fifth step for eliminating, through the apertures, the material having a chemical attacking selectivity; and

a sixth step for selectively growing through the apertures a monocrystalline semiconducting material.

13. A method for the fabrication of a thin monocrystalline layer of a semiconducting material, through growth by chemical vapor deposition (CVD) wherein crystal growth is initiated on at least one seed having a chemical composition which is the same or is different from that of the semiconducting material of the thin layer to be obtained, said crystal growth being confined within a space located between two confinement layers each made of a material different from the semiconducting material of the thin layer in such a way that there can be neither nucleation nor deposition of semiconducting material on exposed surfaces of the two confinement layers, the space between the two confinement layers defining the thickness of the semiconductor monocrystalline thin layer to be obtained, comprising the following steps:

a first step for making, on a substrate, at least one band of dielectric material;

a second step for coating the at least one band by an interposed, semiconducting material displaying a selectivity of chemical attack with respect to the dielectric material;

a third step for coating the substrate and coated bands by an encapsulating material having a selectivity of chemical attack with respect to the at least one band and interposed material and permitting neither nucleation not deposition through species of said chemical vapor deposition on its surface exposed to the chemical vapor deposition;

a fourth step for making apertures in the encapsulating material on top of the at least one band of dielectric material.

a fifth step for eliminating, through the apertures, the semiconducting, interposed material; and

a sixth step for selective growth and epitaxy through the apertures of a monocrystalline semiconducting material.

14. A method for the fabrication of a thin monocrystalline layer of a semiconducting material, through growth by chemical vapor deposition (CVD) wherein crystal growth is initiated on at least one seed having a chemical composition which is the same or is different from that of the semiconducting material of the thin layer to be obtained, said crystal growth being confined within a space located between two confinement layers each made of a material different from the semiconducting material of the thin layer in such a way that there can be neither nucleation nor deposition of semiconducting material on exposed surfaces of the two confinement layers, the space between the two confinement layers defining the thickness of the semiconductor monocrystalline thin layer to be obtained, wherein making the seed of monocrystalline, semiconducting material comprises the following steps:

depositing on a substrate a first confinement layer and then an interposed layer;

etching in the first confinement layer and the interposed layer at least one first aperture;

growing a seed of monocrystalline semiconducting material in said first aperture;

depositing a second confinement layer;

making at least one second aperture in the second confinement layer and removing the interposed layer;

wherein said interposed layer has an attack selectivity with respect to the first and second confinement layers.

15. A method for the fabrication of a thin monocrystalline layer of a semiconducting material, through growth by chemical vapor deposition (CVD) wherein crystal growth is initiated on at least one seed having a chemical composition which is the same or is different from that of the semiconducting material of the thin layer to be obtained, said crystal growth being confined within a space located between two confinement layers each made of a material different from the semiconducting material of the thin layer in such a way that there can be neither nucleation nor deposition of semiconducting material on exposed surfaces of the two confinement layers, the space between the two confinement layers defining the thickness of the semiconductor monocrystalline thin layer to be obtained, comprising the steps of:

making a first confinement layer on a substrate, said confinement layer including at least one first aperture with, in the first aperture, a block of monocrystalline semiconducting material emerging above the first confinement layer, by a height corresponding to the thickness of the monocrystalline layer to be obtained; and

placing a mask, having at least one second aperture and a face in contact with the block;

wherein a semiconducting material is epitaxially grown through the second aperture so that there is growth of a monocrystalline layer from the block between the first confinement layer and the face of the mask.

16. A method according to claim 15, wherein the mask is movable with respect to the block, in parallel to a surface of the first confinement layer.