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Metallization processing

  • US 4,999,317 A
  • Filed: 09/29/1989
  • Issued: 03/12/1991
  • Est. Priority Date: 09/29/1989
  • Status: Expired due to Term
First Claim
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1. In the manufacture of integrated-circuit devices, a method for forming a metal layer on a dielectric layer on a substrate comprising a semiconductor-device face, characterized byforming a protective layer on a portion of said dielectric layer on said semiconductor-device face, thereby forming an assembly in which a first area comprising semiconductor device structures is protected, said first area excludes a peripheral region of said face,exposing the resulting assembly to an etchant, thereby removing dielectric material from a second area which is comprised in the complement of said first area,removing said protective layer,forming an adhesive layer on at least said dielectric layer, andforming a metal layer on at least said adhesive layer.

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