Metallization processing
First Claim
1. In the manufacture of integrated-circuit devices, a method for forming a metal layer on a dielectric layer on a substrate comprising a semiconductor-device face, characterized byforming a protective layer on a portion of said dielectric layer on said semiconductor-device face, thereby forming an assembly in which a first area comprising semiconductor device structures is protected, said first area excludes a peripheral region of said face,exposing the resulting assembly to an etchant, thereby removing dielectric material from a second area which is comprised in the complement of said first area,removing said protective layer,forming an adhesive layer on at least said dielectric layer, andforming a metal layer on at least said adhesive layer.
5 Assignments
0 Petitions
Accused Products
Abstract
When forming a metallization layer in integrated-circuit semiconductor device fabrication, metal such as tungsten, for example, adheres poorly to a dielectric such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer. Processing of the invention prevents such flaking by, first, removing the dielectric from the back side, edge, and "clip-mark" areas of the wafer and, second, depositing a glue layer on remaining dielectric on the face of the wafer. Removal of dielectric material is by etching in the presence of a protective layer on the face of the wafer.
16 Citations
17 Claims
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1. In the manufacture of integrated-circuit devices, a method for forming a metal layer on a dielectric layer on a substrate comprising a semiconductor-device face, characterized by
forming a protective layer on a portion of said dielectric layer on said semiconductor-device face, thereby forming an assembly in which a first area comprising semiconductor device structures is protected, said first area excludes a peripheral region of said face, exposing the resulting assembly to an etchant, thereby removing dielectric material from a second area which is comprised in the complement of said first area, removing said protective layer, forming an adhesive layer on at least said dielectric layer, and forming a metal layer on at least said adhesive layer.
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17. In the manufacture of integrated-circuit devices, a method for forming a metal layer on a dielectric layer on a wafer comprising a semiconductor-device face, characterized by
forming a protective layer on a portion of said dielectric layer on said semiconductor-device face, thereby forming an assembly in which a first area later to receive a metallization is protected, exposing the resulting assembly to an etchant, thereby removing dielectric material from an unprotected area, and to produce a semiconductor surface adherent to metallization material, said semiconductor surface comprising the backside and the edge of said wafer, and clip marks on the face of said wafer, removing said protective layer to expose dielectric material, forming an adhesive layer at least on now-exposed dielectric material, and forming a metal layer in part on said adhesive layer and in part on semiconductor material, said metal layer thereby adhering satisfactorily and being resistant to flaking.
Specification