Photodiode
First Claim
1. A photovoltaic detector with a planar structure having a first buffer layer of semi insulating ZnTe,a second buffer layer of semi insulating CdTe located above said first buffer layer,an substrate of GaAs located below said first buffer layer, p1 an epitaxial semiconductor semimetal Schottky type of photodiode having an isotype heterojunction located above said second buffer layer, andfirst and second contacts coupled to said epitaxial semiconductor semimetal Schottly type of photodiode to provide a diode.
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Accused Products
Abstract
In this invention, there is disclosed a new photodiode which comprises a semimetal/semiconductor junction. Distortion of the bands associated with this type of junction result in current flow when an electron hole pair is formed by, for example, a photon impinging upon the junction. The photodiode operates in the photovoltaic mode. However, rather than relying on impurity doping to fabricate a p-n junction, the semimetallic nature of HgTe and its large conduction band offsets with Hg1-x Cdx Te are used to create a rectifying Schottky like structure.
42 Citations
2 Claims
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1. A photovoltaic detector with a planar structure having a first buffer layer of semi insulating ZnTe,
a second buffer layer of semi insulating CdTe located above said first buffer layer, an substrate of GaAs located below said first buffer layer, p1 an epitaxial semiconductor semimetal Schottky type of photodiode having an isotype heterojunction located above said second buffer layer, and first and second contacts coupled to said epitaxial semiconductor semimetal Schottly type of photodiode to provide a diode.
Specification