Nonvolatile semiconductor memory having a stress test circuit
First Claim
1. A nonvolatile semiconductor memory comprising:
- a plurality of bit lines each having a first end an a second end;
a plurality of word lines;
nonvolatile semiconductor memory cells arranged in a matrix form and respectively connected to corresponding ones of said bit lines and word lines;
means for selecting one of said bit lines and one of said word lines;
a first transistor coupled to the first end of each of said bit lines, said first transistor being turned on in a data programming mode of the semiconductor memory;
a plurality of second transistors respectively connected between the second ends of the bit lines and a common connecting line, said first transistor being turned off and said second transistors being turned on in a test mode of the semiconductor memory, each of said second transistors having a mutual conductance smaller than that of said first transistor; and
means connected to said common connecting line for applying a stress voltage to said bit lines in the test mode.
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Accused Products
Abstract
In a nonvolatile semiconductor memory, a plurality of nonvolatile semiconductor memory cells are arranged in a matrix form. Each of the memory cells is connected to a corresponding one of a plurality of bit lines and to a corresponding one of a plurality of word lines. The ends of the bit lines are commonly connected to a programming transistor for setting a programming mode through transistors for selecting the bit lines. The transistors are connected to column decoders and the word lines are connected to a row decoder. Furthermore, the other ends of the bit lines are connected to a common connecting line through transistors for setting a test mode and the common connecting line is connected to a node between the test mode transistors and a series circuit of a transistor and a dummy memory cell in a clamp circuit. The transistor of the clamp circuit is connected to a high voltage and the series circuit is connected to the ground. In the test mode, the programming transistor and the bit line selecting transistors are turned off and the test mode transistors and the transistor connected to the clamp circuit are turned on. Thus, a test voltage is applied to the memory cells through the common connecting line, the test mode transistors and the bit lines.
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Citations
12 Claims
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1. A nonvolatile semiconductor memory comprising:
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a plurality of bit lines each having a first end an a second end; a plurality of word lines; nonvolatile semiconductor memory cells arranged in a matrix form and respectively connected to corresponding ones of said bit lines and word lines; means for selecting one of said bit lines and one of said word lines; a first transistor coupled to the first end of each of said bit lines, said first transistor being turned on in a data programming mode of the semiconductor memory; a plurality of second transistors respectively connected between the second ends of the bit lines and a common connecting line, said first transistor being turned off and said second transistors being turned on in a test mode of the semiconductor memory, each of said second transistors having a mutual conductance smaller than that of said first transistor; and means connected to said common connecting line for applying a stress voltage to said bit lines in the test mode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification