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Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

  • US 5,000,113 A
  • Filed: 12/19/1986
  • Issued: 03/19/1991
  • Est. Priority Date: 12/19/1986
  • Status: Expired due to Term
First Claim
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1. A semiconductor processing reactor comprising:

  • a housing defining a vacuum chamber for mounting a wafer horizontally and including a horizontal, inlet gas manifold over the wafer mounting position for supplying reactant gases to a wafer at the mounting position;

    a gas distributor plate mounted peripherally about the wafer mounting position within the chamber, the plate including a circular array of exhaust holes therein;

    a vacuum exhaust pump means; and

    a circular channel beneath and communicating with the hole array and having an exhaust port connected to the vacuum exhaust pump means for flowing said gases radially across the wafer through the exhaust port, the channel volume providing high conductance relative to said exhaust holes sufficient to enable controlled radial gas flow across the wafer and through said exhaust holes into the channel.

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