Method of manufacturing semiconductor device comprising step of patterning resist and light irradiation apparatus used by the manufacturing method

• US 5,001,039 A
• Filed: 03/10/1989
• Issued: 03/19/1991
• Est. Priority Date: 03/14/1988
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Ogoh, Ikuo
• Primary Examiner(s): DEES, JOSE G
• Application Number:
  US07/321,810
• Time in Patent Office: 739 Days
• Field of Search: 430/328, 430/330, 430/311
• US Class Current: 430/311
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking

Abstract

A method of forming a resist pattern on a main surface of a semiconductor substrate comprising the steps of exposing a resist to light and developing it to become a predetermined pattern, curing the surface of the resist pattern formed by the exposing and developing treatments by irradiating the surface with far ultraviolet rays having a short wavelength, and baking the resist pattern subjected to a light irradiation treatment. The light irradiation treatment is performed by irradiating the surface of the resist pattern, which is not shaded from light with the far ultraviolet rays, in a state in which a resist pattern region formed on a peripheral portion of the semiconductor substrate is shaded from light. As a result, a crack can be prevented from forming on the resist of the peripheral portion of the semiconductor substrate. A light irradiation apparatus used in the light irradiation treatment comprises shading means for selectively intercepting the irradiation light. The shading means prevent light irradiation onto the resist pattern of the peripheral portion of the semiconductor substrate.

Claims

1. A method of manufacturing a semiconductor device forming a circuit pattern on a semiconductor substrate using a resist pattern comprising the steps of:

coating a resist over the whole surface of the main surface of the semiconductor substrate;

forming a resist pattern by exposing the coated resist to light through a mask and then developing it; and

selectively curing the surface of said resist pattern by irradiating the surface of said resist pattern only at a central portion of the semiconductor substrate with light having a predetermined wavelength, with the surface of said resist pattern at the peripheral portion surrounding the central portion of said semiconductor substrate remaining unirradiated.

2. A method of manufacturing a semiconductor device forming a circuit pattern on a semiconductor substrate using a resist pattern comprising the steps of:

coating a resist over the whole surface of the main surface of the semiconductor substrate;

forming a resist pattern by exposing the coated resist to light through a mask and then developing it;

shading a peripheral portion of said resist pattern formed on the main substrate of said semiconductor substrate; and

curing the surface of said resist pattern by irradiating an unshaded portion of the surface of said resist pattern with light having a predetermined wavelength.

3. A method of manufacturing a semiconductor device in accordance with claim 2, further comprising the step of:

curing the resist pattern formed on said semiconductor substrate by heating said semiconductor substrate after curing the surface of said resist pattern by said light irradiating means.

4. A method of manufacturing a semiconductor device forming a circuit pattern on a semiconductor substrate using a resist pattern comprising the steps of:

coating a resist on a main surface of the semiconductor substrate;

forming a resist pattern by exposing the coated resist to light through a mask and then developing it;

shading a peripheral portion of said resist pattern formed on the main substrate of said semiconductor substrate; and

curing said resist pattern by irradiating an unshaded portion of the surface of said resist pattern with light having a predetermined wavelength and heating said resist pattern at the same time.

5. A method of manufacturing a semiconductor device in accordance with claim 4, wherein said step of heating the resist pattern is performed by heating means provided on the back surface of said semiconductor substrate.