Optical transistor

• US 5,001,523 A
• Filed: 12/11/1989
• Issued: 03/19/1991
• Est. Priority Date: 12/13/1988
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Galina A. Semenova, Jury L. Bystrov, Svyatoslav A. Lomashevich
• Inventors: Lomashevich, Svyatoslav A., Semenova, Galina A., Bystrov, Jury L.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Crane, Sara W.
• Application Number:
  US07/449,529
• Time in Patent Office: 463 Days
• Field of Search: 357/19, 357/16, 357/17, 357/45, 372/8, 372/21, 372/50, 372/94, 350/353, 350/354, 350/355, 350/386, 350/96.11, 350/96.12, 350/96.13, 350/96.14, 350/96.15, 365/64, 365/215, 365/234, 364/713
• US Class Current: 359/332
• CPC Class Codes: G02F 3/00 Optical logic elements; Optical bistable devices

Abstract

An optical transistor comprising two semiconductor lasers 1, arranged in a nonlinear ring vibrator 2, and two strip waveguides 3, each of which has a region A of optical coupling with the nonlinear ring vibrator 2, positioned on a common substrate. The regions of optical coupling are positioned diametrically opposite each other. The semiconductor lasers 1 have electrodes 4 for power supply. Each region A of optical coupling is provided with a control electrode 5 and each section of the nonlinear ring vibrator 2, located between the semiconductor 1 and corresponding regions of optical coupling, is also provided with a control electrode 6. Mirrors 7 form vibrators for the semiconductor lasers 1.

Claims

1. An optical transistor comprising:

a nonlinear ring vibrator and at least one pair of strip waveguides, positioned on a common substrate, each pair having a region of optical coupling with said nonlinear ring vibrator,

wherein said regions of optical coupling corresponding to said pair of strip waveguides are positioned diametrically opposite each other,

in which in order to expand the functional possibilities by obtaining bistable characteristics and a differential gain having a steep slope, additionally provided are at least two semiconductor lasers positioned in said nonlinear ring vibrator outside said regions of optical coupling,

wherein each of said regions of optical coupling and each section of said nonlinear ring vibrator, located between said semiconductor lasers and said regions of optical coupling, are provided with control electrodes.

2. An optical transistor comprising:

a nonlinear ring vibrator and two pairs of strip waveguides, positioned on a common substrate, each pair having a region of optical coupling with said nonlinear ring vibrator, four semiconductor lasers, in which, in order to increase the number of contacts and ensure complete access for switching the optical signals, the axial lines of each of the said strip waveguides, passing through said regions of optical coupling with said nonlinear ring vibrator, form an angle of 45°

with each of the end sections of said strip waveguide,

neighboring end sections of said strip waveguides have four regions of mutal optical coupling, provided with control electrodes and positioned in pairs opposite each other on two mutually perpendicular diametrical straight lines.

3. The optical transistor according to claim 2 forming as a composite member a switching matrix with the full number of inputs equal to 2n, where n is the number of cells of said switching matrix, which are formed by one said ring vibrator comprising said four lasers and by four contiguous strip waveguides, one of which is a closed waveguide.