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Radiation hardened CMOS on SOI or SOS devices

  • US 5,001,528 A
  • Filed: 01/31/1989
  • Issued: 03/19/1991
  • Est. Priority Date: 01/31/1989
  • Status: Expired due to Fees
First Claim
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1. A radiation hardened MOS SOI or SOS transistor comprising:

  • a silicon-on-insulator or a silicon-on-sapphire wafer;

    a source region formed on said wafer;

    a drain region formed on said wafer;

    a channel region formed on said wafer between and contiguous with said source region and said drain region;

    said source region and said drain region being of one conductivity type and said channel being of an opposite conductivity type;

    end plugs connected to said channel region and extending along opposite ends of said source region but not along said drain region, said end plugs being of the same conductivity type as said channel region but of a higher impurity concentration, and said end plugs having a conductivity which is opposite to that of said source region; and

    means for establishing electrical contact with said drain region, said channel region, and with said source region and each of said end plugs.

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