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Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film

  • US 5,002,617 A
  • Filed: 01/19/1990
  • Issued: 03/26/1991
  • Est. Priority Date: 01/21/1989
  • Status: Expired due to Term
First Claim
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1. A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of aluminum atoms (Al), arsenic atoms (As), hydrogen atoms (H), and atoms (M) of a p type or n type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the range of 50 to 800 Å

  • , and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 7 atomic %; and

    said i-type semiconductor layer comprises a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

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