Plasma etching apparatus and method

• US 5,002,631 A
• Filed: 03/09/1990
• Issued: 03/26/1991
• Est. Priority Date: 03/09/1990
• Status: Expired due to Term

• Current Assignee: AT&T, Inc.
• Original Assignee: AT&T, Inc.
• Inventors: Giapis, Konstantinos P., Gottscho, Richard A., Scheller, Geoffrey R.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/494,999
• Time in Patent Office: 382 Days
• Field of Search: 156/626, 156/643, 156/646, 156/662, 156/345, 204/192.32, 204/192.33, 204/192.35, 204/298.31, 204/298.32, 118/712, 118/724, 356/357, 356/381, 356/382
• US Class Current: 216/60
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/02019 Chemical etching
• CPC Class Codes: H01L 21/30621 Vapour phase etching

Abstract

Reactive ion plasma etching apparatus and method are based upon the discovery of enhanced uniformity of etching at low workpiece temperatures. With cooling to sufficiently low temperatures, spontaneous etching is inhibited and etching uniformity is controlled not by gas flow and pressure but rather by ion flux. As a result, one can eliminate uniformity enhancing apparatus which heretofore obstructed optical access to the workpiece, provide window means permitting optical access to a major portion of the workpiece and employ sophisticated optical monitoring techniques during the etching process.

Claims

1. Reactive ion etching apparatus comprising:

a vessel;

an electrode for mounting a workpiece to be etched within said vessel;

cooling means for cooling said workpiece mounted within said vessel;

plasma generation means laterally displaced with respect to said mounted workpiece for creating a plasma overlying said workpiece,

means for attracting ions from said plasma onto said workpiece; and

optical window means having a lateral dimension in excess of about one inch disposed in a wall of said vessel overlying said workpiece for providing optical access to said workpiece during etching.

2. Reactive ion etching apparatus according to claim 1 further comprising:

a source of light;

means for directing light from said source onto a region of said workpiece; and

means for detecting light from said region of said workpiece.

3. Reactive ion etching apparatus according to claim 1 wherein:

said vessel comprises metal walls, and

said plasma generating means comprises electrode means and an RF power supply for establishing an RF field between said electrode and said metal walls.

4. Reactive ion etching apparatus according to claim 2 wherein said electrode means comprises means for electrostatically clamping said workpiece on said electrode.

5. Reactive ion etching apparatus according to claim 2 wherein said means for attracting ions comprises means for applying to said electrode a voltage for attracting ions from a plasma onto said workpiece.

6. Reactive ion etching apparatus according to claim 2 wherein said cooling means comprises means for providing a flow of chilled gas in thermal contact with the side of said workpiece opposite the side to be etched.

7. Apparatus according to claim 2 wherein said optical window means has lateral dimension in excess of the lateral dimension of said workpiece.

8. Apparatus according to claim 2 wherein said light source is disposed outside said vessel and oriented to direct light through said window onto said workpiece and said means for detecting light is disposed outside said workpiece and is oriented for receiving light from said workpiece through said window.

9. A method for reactively ion etching a workpiece comprising the steps of:

disposing the workpiece on an electrode within a sealed vessel;

evacuating the vessel to a low pressure in the range between 10^-4 Torr and 10 Torr;

forming a reactive plasma overlying the surface of said workpiece to be etched;

cooling said workpiece to a sufficiently low temperature that etching reactants are adsorbed on said surface to be etched; and

inducing bombardment of ions from said plasma onto said surface to be etched whereby etching is effected at and substantially confined to regions of the workpiece locally activated by ion bombardment.

10. A method according to claim 9 wherein:

said plasma is formed over the surface of the workpiece without obstructing optical access to the surface; and

further comprising the step of optically monitoring the etching of said workpiece through an optical window in said vessel overlying said workpiece.