Large-area uniform electron source

• US 5,003,178 A
• Filed: 11/14/1988
• Issued: 03/26/1991
• Est. Priority Date: 11/14/1988
• Status: Expired due to Term

• Current Assignee: Electron Vision Corp (Honeywell International Inc.)
• Original Assignee: Electron Vision Corp (Honeywell International Inc.)
• Inventors: Livesay, William R.
• Primary Examiner(s): Berman, Jack I.
• Assistant Examiner(s): Nguyen, Kiet T.
• Application Number:
  US07/270,751
• Time in Patent Office: 862 Days
• Field of Search: 250/492.3, 250/492.2, 250/492.21, 250/398, 250/423 R, 250/423 F, 250/426, 250/427, 250/424, 313/360.1, 313/362.1, 313/363.1, 313/231.31, 315/111.81, 315/111.31
• US Class Current: 250/492.3
• CPC Class Codes: H01J 3/025 Electron guns using a discharge in a gas or a vapour as electron source gas-filled discharge tubes with gaseous cathodes H01J15/00
• CPC Class Codes: H01J 37/077 Electron guns using discharge in gases or vapours as electron sources

Abstract

A large-area electron source which can operate continuously, stably, and indefinitely in a poor vacuum environment. The source includes a glow discharge cathode, appropriately positioned with respect to a target anode, and a fine-mesh grid spaced from the cathode by a distance less than the mean free path length of electrons leaving the cathode, the grid being electrically biased to control the electron beam current over a wide range with only small grid voltage changes. An accelerating voltage applied to the cathode can be varied continuously from as low as a few hundred volts to 30 KeV or greater and the source will continue to operate satisfactorily. Further, the grid is made of a fine mesh wire of sufficiently small dimensions as to not be resolvable in the target plane. A further refinement of the device utilizes scanning coils to achieve additional uniformity of the incident beam at the target plane. The basic apparatus of the invention can be combined with other features, for use in shadow mask lithography, resist sensitivity measurement, lift off processing, and resist curing.

Claims

1. Electron emission apparatus, comprising:

a vacuum chamber;

a cathode, of which at least one surface of relatively large area is exposed to the vacuum in the chamber;

means for applying a selected negative voltage to the cathode, to accelerate electrons toward a target also located in the vacuum chamber;

a mesh grid anode spaced apart from the cathode at a distance not exceeding the mean free path length of electrons leaving the cathode for the lowest selected voltage applied between the cathode and grid anode; and

means for applying a voltage to the grid anode;

wherein the electrons accelerated from the cathode are emitted as a result of ions in the vacuum chamber being accelerated into the cathode, and wherein the distance between the grid anode and the target is great enough to ensure that ionization collisions occur in the region of the chamber between the grid anode and the target, to maintain an ion plasma in the region.

2. Electron emission apparatus as defined in claim 1, wherein:

the mesh grid anode is of such small dimensions and the target is placed at such a large distance that the structure of the grid is not imaged on the target.

3. Electron emission apparatus as defined in claim 2, and further comprising:

electromagnetic means for deflecting the electrons emitted from the cathode in a scanning pattern to reduce any imaging of the grid anode on the target.

4. Electron emission apparatus as defined in claim 1, and further comprising:

means for controlling the pressure in the vacuum chamber, to further regulate the rate of electron emission from the cathode.

5. Electron emission apparatus as defined in claim 4, and further comprising:

means for controlling the vacuum chamber pressure, to control the electron beam current based on measurement of the beam current.

6. Electron emission apparatus as defined in claim 1, and further comprising:

means for varying the grid anode voltage, to control the electron beam current based on measurement of the beam current.

7. Electron emission apparatus as defined in claim 1, wherein:

the means for applying a voltage to the grid anode includes means for applying a voltage that completely shuts off the electron beam by preventing positive ions from reaching the cathode.

8. Electron emission apparatus as defined in claim 1, and further comprising:

an aperture plate mask positioned between the grid anode and the target, to produce a pattern of electron radiation on selected areas of the target.

9. A method for producing a controllable electron beam of relatively large cross-sectional area, the method comprising the steps of:

applying a selected negative voltage to a large-area cathode positioned in a vacuum chamber, to accelerate electrons toward a target also located within the vacuum chamber;

applying a voltage to a mesh grid anode spaced from the cathode by a distance not exceeding the mean free path length of electrons leaving the cathode for the lowest selected voltage applied between the cathode and the grid anode; and

initializing ionization of residual gases in the vacuum chamber, whereby positive ions are attracted to the cathode surface and cause the emission of electrons from the cathode;

maintaining an ion plasma in the vacuum chamber principally as a result of collisions between residual gas particles and electrons that have been accelerated through the mesh grid anode and toward the target, whereby a highly uniform electron beam is obtained; and

controlling the rate of electron emission by varying the voltage applied to the grid, whereby a more negative grid anode voltage will attract more positive ions through the grid anode and into the cathode, to produce more electrons.

10. A method as defined in claim 9, and further comprising:

deflecting the electron beam in a scanning pattern to reduce any imaging effect of the grid anode at the target.

11. A method as defined in claim 9, and further comprising:

controlling the pressure in the vacuum chamber, to further regulate the rate of electron emission from the cathode.

12. A method as defined in claim 9, and further comprising:

sensing the electron beam current; and

controlling the current based on the sensed measurement of the current.

13. A method as defined in claim 9, and further comprising:

curing a resist layer located at the target, with the electron beam from the cathode.

14. A method as defined in claim 9, and further comprising:

positioning an aperture plate mask between the grid anode and the target, to expose only selected areas of the target to the electron beam.

15. A method as defined in claim 14, and further comprising:

moving the plate perpendicular to the electron beam, to expose successive areas of the target to different exposure doses or accelerating voltages, for the purpose of measuring resist sensitivity.

16. A method as defined in claim 9, and further comprising:

applying a sufficiently positive voltage to the grid anode to completely shut off the electron beam.

17. A method as defined in claim 16, and further comprising:

alternately turning the electron beam off and on under control of the voltage applied to the grid anode, to provide a desired exposure pattern at the target.

18. A method as defined in claim 9, wherein:

the electron beam is employed to expose a metal layer prior to the use of a solvent in a lift off process.

19. Electron emission apparatus, comprising:

a vacuum chamber containing residual gas atoms;

a cathode, of which at least one surface of relatively large area is exposed to the vacuum in the chamber;

means for applying a selected negative voltage to the cathode, to accelerate a beam of electrons to a target also located in the vacuum chamber, from a region close to the cathode, wherein positive ions formed in an ionization region located between the cathode and the target are accelerated toward the cathode and induce the emission of electrons, some of which cause more ionization;

a mesh grid anode positioned between the cathode and the target but outside the ionization region, at a distance not exceeding the mean free path length of electrons leaving the cathode for the lowest selected voltage applied between the cathode and grid anode; and

means for applying a voltage to the grid anode, to control the rate of electron emission from the cathode, whereby positive ions formed in the ionization region are selectively attracted or repelled by appropriately biasing the grid anode, and the electron beam current is controlled independently of pressure and electron accelerating voltage;

and wherein the distance between the grid anode and the target is great enough that an ion plasma is maintained in the ionization region principally by collisions between residual gas atoms and electrons that have been accelerated through the mesh grid anode, whereby a highly uniform beam current is obtained across the entire cathode surface and over a wide range of beam intensities.

20. Electron emission apparatus as defined in claim 19, wherein:

the means for applying a selected voltage between the cathode and the anode is capable of applying a voltage from as low as approximately 500 volts to at least as high as 30,000 volts.