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Humidity sensor

  • US 5,004,700 A
  • Filed: 08/01/1990
  • Issued: 04/02/1991
  • Est. Priority Date: 08/19/1983
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a humidity sensor comprising the steps of:

  • providing a host device constituting a semi-conductor substrate and the gate insulator of an insulated gate field effect transistor, the gate insulator having an exposed surface;

    forming a layer of an aqueous solution of polyvinyl alcohol on the exposed surface of the gate insulator;

    subjecting said layer to heat treatment to cause crystallization and/or stabilization of the polyvinyl alcohol; and

    forming a gate electrode on said layer so treated.

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