Electrode for use in the treatment of an object in a plasma

• US 5,006,220 A
• Filed: 02/14/1990
• Issued: 04/09/1991
• Est. Priority Date: 10/26/1987
• Status: Expired due to Term

• Current Assignee: Tokyo OHKA Kogyo Company Limited
• Original Assignee: Tokyo OHKA Kogyo Company Limited
• Inventors: Samezawa, Mitsuo, Uehara, Akira, Hijikata, Isamu
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/479,988
• Time in Patent Office: 419 Days
• Field of Search: 204/298 E, 204/298 EG, 204/298.33, 156/345, 118/723, 422/186.04, 422/186.05, 219/121.43, 315/111.41
• US Class Current: 204/298.33
• CPC Class Codes: H01J 37/32559 Protection means, e.g. coatings
• CPC Class Codes: Y10S 156/914 Differential etching apparatus including particular materials of construction

Abstract

An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by CVD coating process.

Claims

1. An electrode for use in the treatment of an object through plasma reaction, said electrode being composed of silicon carbide in its entirety:

said electrode being of a disk shape and having a plurality of through holes defined therein for ejecting a reaction gas therethrough toward said object;

each of said holes having a diameter ranging from 0.3 to 1.0 mm; and

said holes are uniformly spaced at a spacing of 20 mm or less between two adjacent ones of said holes.

2. An electrode according to claim 1, wherein upper and lower ends of each of said through holes is beveled.