Transformerless semiconductor AC switch having internal biasing means

• US 5,006,737 A
• Filed: 04/24/1989
• Issued: 04/09/1991
• Est. Priority Date: 04/24/1989
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Fay, Gary V.
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): Phan, Trong
• Application Number:
  US07/341,881
• Time in Patent Office: 715 Days
• Field of Search: 307/571, 307/574, 307/577, 307/583, 307/584, 307/311, 307/254, 307/296.1, 307/296.5, 307/296.6, 307/296.8, 307/303.1, 307/303.2
• US Class Current: 327/434
• CPC Class Codes: H03K 17/6874 in a symmetrical configuration
• CPC Class Codes: H03K 17/785 controlling field-effect transistor switches

Abstract

An improved semiconductor AC switch is described having internal bias generation for the power MOSFET switches and isolated control input. Dual power MOSFETS with substrate diodes are connected in series between source and load. DC gate bias for the MOSFETS is derived from an internal power supply containing energy storage which charges from the line, typically every half cycle. The gates of the power MOSFETS are tied to the internal bias generator through a voltage divider network containing a variable resistance controlled by an optical input signal. The internal energy storage may be a capacitor or solid state battery, preferably a monolithic thick or thin film battery. No transformers or external control bias generators are required and the resulting switch is particularly simple and compact.

Claims

1. A transformerless AC semiconductor switch for coupling AC power to an AC load, comprising:

first and second power input means for receiving power from an AC source;

first and second power output means for coupling AC power to a load;

first and second series connected MOSFETS having connected together first power terminals and second power terminals coupled between the first power input means and the first power output means, wherein the MOSFETS have connected together gate electrodes; and

internal voltage bias means coupled between the connected together first power terminals and the connected together gate electrodes of the MOSFETS for providing a gate voltage larger than the threshold voltage of at least one of the power MOSFETS, wherein the internal voltage bias means generates the bias from the first and second power input means without use of a transformer.

2. The switch of claim 1 further comprising first and second diode means between the power terminals of the first and second MOSFETS, respectively, and arranged in serial opposed fashion between the power input and output means.

3. The switch of claim 1 wherein the internal voltage bias means comprises a first rectifying means having a first terminal coupled to the second power input means and a second terminal coupled to the connected together first power terminals through at least one capacitor and coupled to the connected together gate electrodes through a current limiting means.

4. The switch of claim 3 further comprising a resistor and a voltage reference means, wherein the resistor has a first terminal connected to a first terminal of the at least one capacitor and to the second terminal of the rectifying means and a second terminal connected to a first terminal of the voltage reference means and wherein the voltage reference means has a second terminal coupled to a second terminal of the at least one capacitor.

5. The switch of claim 4 further comprising a controllable variable resistance means having a first power terminal coupled to the second terminal of the resistor and a second power terminal coupled to the connected together gate electrodes.

6. The switch of claim 5 further comprising energy storage means coupled across the voltage reference means.

7. The switch of claim 5 wherein the resistance of the controllable variable resistance means varies in response to an optical input signal.

8. The switch of claim 7 wherein the controllable variable resistance means comprises a photovoltaic device.

9. A transformerless AC semiconductor switch for coupling AC power to an AC load, and having internal biasing means, comprising:

first and second power input means for accepting AC power;

first power output means for coupling AC power to a load;

first and second series opposed connected MOSFETS having coupled together first power terminals and second power terminals coupled, respectively, to the first power input and first power output means, wherein the MOSFETS have coupled together gate electrodes; and

internal voltage bias means coupled between the coupled together first power terminals and the coupled together gate electrodes of the MOSFETS for providing a gate voltage larger than the threshold voltage of at least one of the power MOSFETS, wherein the voltage bias means comprises an integral energy storage means coupled to the first and second power input means for receiving energy therefrom during at least some half cycles of the AC power.

10. The switch of claim 9 wherein the integral energy storage means comprises a capacitor.

11. The switch of claim 9 wherein the integral energy storage means comprises a diode whose input is coupled to the second power input means, a resistor and a capacitor having first terminals coupled to the diode output, and a voltage reference means coupled across second terminals of the resistor and capacitor.

12. The switch of claim 11 further comprising means for coupling the juncture of the capacitor and voltage reference means to the coupled together first power terminals, and means for coupling the juncture of the resistor and the voltage reference means to the coupled together gate electrodes.

13. The switch of claim 12 further comprising resistance means coupled between the coupled together first power terminals and the coupled together gate electrodes.

14. The switch of claim 9 wherein the integral energy storage means comprises a solid state battery.

15. The switch of claim 14 wherein the integral energy storage means is monolithic with the switch.

16. The switch of claim 14 wherein the energy storage means comprises a diode coupled between the second power input means and a first terminal of the battery and wherein a second terminal of the battery is coupled to the coupled together first power terminals.

17. A transformerless AC semiconductor switch for coupling AC power to an AC load, and having internal energy storage means, comprising:

first and second power input means for accepting AC power;

first and second power output means for coupling AC power to a load;

first and second MOSFETS having coupled together first power terminals and having a second power terminal of the first MOSFET coupled to the first power input means and having a second power terminal of the second MOSFET coupled to the first power output means and having coupled together gate electrodes;

rectifying means having a first terminal coupled to the second power input means and a second terminal;

energy storage means having a first terminal coupled to the second terminal of the rectifying means and a second terminal coupled to the coupled together first power terminals of the MOSFETS; and

connection means extending from the first terminal of the energy storage means to the coupled together gate electrodes.

18. The switch of claim 17 wherein the connection means comprises a variable resistance means whose resistance is adjusted by an optical input signal.

19. The switch of claim 18 further comprising resistance means extending between the coupled together first power terminals and the coupled together gate electrodes.

20. The switch of claim 17 wherein the rectifying means comprises a rectifying diode in series with a least one opposed voltage reference diode.