Linear-gain amplifier arrangement

• US 5,006,815 A
• Filed: 10/06/1989
• Issued: 04/09/1991
• Est. Priority Date: 10/26/1988
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Klumperink, Eric A. M., Seevinck, Evert
• Primary Examiner(s): Mullins, James B.
• Application Number:
  US07/418,414
• Time in Patent Office: 550 Days
• Field of Search: 330/253, 330/254, 330/257, 330/288, 323/315, 323/316
• US Class Current: 330/253
• CPC Class Codes: H03F 1/3211 in differential amplifiers
• CPC Class Codes: H03G 1/04 Modifications of control circuit to reduce distortion caused by control modifications to reduce influence of variations of internal impedance of amplifying elements caused by control H03F1/08

Abstract

A linear-gain amplifier arrangement comprises a current amplifying cell consisting of field-effect transistors and comprising a first (M1, M3) and a second (M2, M4current-mirror circuit whose respective input transistors (M1; M2) and output transistors (M3; M4) constitute a first and a second differential pair. The input transistors (M1; M2) have their drain electrodes connected to voltage-current converter (V/I) made up of field-effect transistors. The V/I converter supplies difference currents (I_in1 ; I_in2) which are square-law functions of the input voltage (U_in) to be amplified. The difference between these input currents is a linear function of the input voltage. When the transistors are operated in their saturation regions the difference between the output currents (I_out1 ; I_out2) is also a linear function of the input voltage (U_in). By adding a direct voltage (V_c) to the gate-source voltage of the input and output transistors or by adding a direct current (I_c) to the respective input currents (I_in1 ; I_in2) the gain can be varied without a change in bandwidth. When the arrangement is constructed as an integrated semiconductor circuit its gain can be made immune to temperature variations and tolerances in the fabrication process.

Claims

1. A linear-gain amplifier arrangement which comprises:

a current-amplifying cell comprising a first and a second current-mirror circuit of which each comprises at least an input transistor and an output transistor to form a first and a second differential pair, respectively, and means coupled to the current-amplifying cell for defining the gain of the amplifier arrangement, wherein the transistors are all of the field-effect type and are biased to operate in their saturation regions, the input transistors being connected to a voltage-to-current converter which is responsive to an applied input voltage so as to supply difference currents which are related to said input voltage by a square-law function.

2. An amplifier arrangement as claimed in claim 1, wherein the source electrodes of the input transistors are commoned and source electrodes of the output transistors are commoned to form a first and second source terminal, respectively, the means for defining the gain of the amplifier arrangement comprising means connected to the first and the second source terminal for applying a direct voltage between said terminals.

3. An amplifier arrangement as claimed in claim 2, wherein the second source terminal is connected directly to the signal ground of the amplifier arrangement and the first source terminal is connected to said signal earth via the means for defining the gain.

4. An amplifier arrangement as claimed in claim 2, wherein the means for defining the gain of arrangement supply a variable direct voltage.

5. An amplifier arrangement as claimed in claim 2, characterized in that the input transistors and the output transistors are biassed by means for applying a direct voltage, which means have fabrication process and temperature-dependence properties comparable to those of the means for applying the direct voltage for defining the gain of the amplifier arrangement.

6. An amplifier arrangement as claimed in claim 1, wherein the source electrodes of the input and the output transistors are connected to a power-supply terminal, and the means for defining the gain of the amplifier arrangement comprise means, connected between the gate of the input transistor and the gate of the output transistor of the first and the second current mirror, respectively, for applying a direct voltage between said gates.

7. An amplifier arrangement as claimed in claim 6 wherein the input transistors and the output transistors are biassed by means for applying a direct voltage, which means have fabrication process and temperature-dependence properties comparable to those of the means for applying the direct voltage for defining the gain of the amplifier arrangement.

8. An amplifier arrangement as claimed in claim 6, characterized in that the means for defining the gain of the amplifier arrangement supply a variable direct voltage.

9. An amplifier arrangement as claimed in claim 1, wherein the source electrodes of the input transistors and the output transistors are commoned to form a first and second source terminal, respectively, and means for making the currents in the first and the second source terminal equal to each other, and wherein the means for defining the gain of the amplifier arrangement comprises means, connected to a source terminal, for supplying a direct current.

10. An amplifier arrangement as claimed in claim 9, wherein the means for making the currents in the first and the second source terminal equal to one another comprise a current-mirror circuit having its input connected to the first source terminal and having its output connected to the second source terminal, and said direct current supplying means includes a current-reference circuit connected to the second source terminal to supply the direct current for defining the gain of the amplifier arrangement.

11. An amplifier arrangement as claimed in claim 10 wherein the means for defining the gain of the amplifier arrangement supply a variable direct current.

12. An amplifier arrangement as claimed in claim 10, characterized in that the transistors are biassed by means for applying a direct current, which means have fabrication process and temperature-dependence properties comparable to those of the means for supplying direct current for defining the gain of the amplifier arrangement.

13. An amplifier arrangement as claimed in claim 9 wherein the transistors are biassed by means for applying a direct current, which means have fabrication process and temperature-dependence properties comparable to those of the means for supplying a direct current for defining the gain of the amplifier arrangement.

14. An amplifier arrangement as claimed in claim 9, characterized in that the means for defining the gain of the amplifier arrangement supply a variable direct current.

15. An amplifier arrangement as claimed in claim 1, wherein the transistors are all of the insulated-gate type, the amplifier arrangement comprising an integrated semiconductor circuit.

16. A linear-gain amplifier comprising:

a first and a second current mirror circuit each of which comprises a diode-connected input field effect transistor and an output field effect transistor,

means connecting the input transistors to form a first differential pair and the output transistors to form a second differential pair wherein each of said transistors is biased to operate in its saturation region,

a voltage-to-current converter including first and second outputs and having an input for receiving an input voltage to be amplified, said voltage-to-current converter being responsive to said input voltage to supply difference currents to its first and second outputs which are related to said input voltage as a square-law function,

means connecting the input transistors to respective first and second outputs of the voltage-to-current converter, and

means coupled to at least one said differential pair for defining the gain of the amplifier.

17. An amplifier as claimed in claim 16, wherein said amplifier gain defining means comprise a source of DC voltage coupled to given ones of said transistors so as to add a DC voltage to the gate-source voltages of said input and output transistors.

18. An amplifier as claimed in claim 16, wherein the source electrodes of the input transistors are connected in common to form a first node and the source electrodes of the output transistors are connected in common to form a second node,

a further current mirror circuit having an input connected to said first node and an output connected to said second node, and wherein

said amplifier gain defining means comprises a DC current source coupled to the second node.

19. An amplifier as claimed in claim 16 wherein first main electrodes of the input transistors are connected in common to form a first node and first main electrodes of the output transistors are connected in common to form a second node, said amplifier gain defining means comprising means for supplying a DC current to one of said nodes, and wherein the transistors are biased into the saturation region by means for applying a bias current to said transistors, said bias current applying means and said DC current supplying means being fabricated as part of a common integrated circuit so that amplifier gain is relatively independent of variations in temperature and in the integrated circuit fabrication process.

20. An amplifier as claimed in claim 16 wherein first main electrodes of the input transistors are connected in common to form a first node and first main electrodes of the output transistors are connected in common to form a second node, and said gain defining means comprise means for applying a DC voltage to said first and second nodes.

21. An amplifier as claimed in claim 20 wherein the input transistors and the output transistors are biased into the saturation region by means for applying a bias voltage to said transistors, said bias voltage applying means and said DC voltage applying means being fabricated as part of a common integrated circuit so that amplifier gain is relatively independent of variations in temperature and in the integrated circuit fabrication process.

22. An amplifier as claimed in claim 16 further comprising means coupled to said input and output transistors for making the sum of the currents in the input transistors equal to the sum of the currents in the output transistors.

23. An amplifier as claimed in claim 16 wherein said gain defining means comprise means for applying a common DC voltage to gate-source circuits of said input transistors whereby the sum of the gate-source voltages of the transistors is maintained constant.