Semiconductor laser source modulated at high frequency

• US 5,007,062 A
• Filed: 09/06/1989
• Issued: 04/09/1991
• Est. Priority Date: 09/08/1988
• Status: Expired due to Term

• Current Assignee: Avanex Corporation (Oclaro (North America), Inc.)
• Original Assignee: Alcatel NV (Nokia Corporation)
• Inventors: Chesnoy, Jose
• Primary Examiner(s): Davie, James W.
• Application Number:
  US07/403,745
• Time in Patent Office: 580 Days
• Field of Search: 372/26, 372/50
• US Class Current: 372/26
• CPC Class Codes: H01S 5/06213 Amplitude modulation
• CPC Class Codes: H01S 5/06216 Pulse modulation or generation
• CPC Class Codes: H01S 5/065 Mode locking; Mode suppression; Mode selection ; Self pulsating
• CPC Class Codes: H01S 5/125 Distributed Bragg reflector [DBR] lasers

Abstract

A semiconductor laser (2) constitutes a monolithic source whose intensity is modulated at a frequency lying in the microwave frequency range, typically 10-20 GHz to 100 GHz. It is based on coupling between the longitudinal modes of the laser, with intensity modulation being given by beats between the various modes of the laser. Optimization and control of the laser are made possible by splitting the optical cavity (6, 8, 10) of the laser into successive sections (20, 22, 24). The invention is particularly suitable for telecommunications applications.

Claims

1. A semiconductor laser source modulated at high frequency, comprising:

a monolithic plate having two opposite end faces, said plate being made of a selectively doped semiconductor material defining two opposing bias layers of different conductivity types and a light channel between said layers and extending between the two said end faces having a refractive index lower than that of the surrounding semiconductor material in order to guide light waves along the length of said light channel;

amplification injection means for injecting DC bias current into said plate to give rise to population inversion in said light channel so as to amplify said light waves therein with a possible positive overall amplification, lightwaves lie in a predetermined gain spectrum range having a predetermined gain spectrum width;

two reflectors each carried on a respective one of said two end faces at a respective end of said light channel for defining an optical cavity including said light channel and having an optical cavity length L such that said cavity is resonant in a succession of modes for light waves having a corresponding succession of resonant frequencies, said frequencies being separated at intervals equal to an intermode frequency

space="preserve" listing-type="equation">f.sub.i =c/2L

where c is the speed of light, such that such cavity constitutes a laser oscillator for producing light waves at frequencies close to those of said resonant frequencies which lie within said gain spectrum range, the optical length of the cavity L being limited by the length of said light channel to a value corresponding to a intermode frequency in the microwave range;

modulation injection means for injecting an AC modulation current having a predetermined modulation frequency through a gain modulation section of said light channel located at one end thereof and extending over a minority fraction of the length of said light channel, in order to cause an alternating gain component to appear therein, said modulation frequency being close to said intermode frequency in order to produce said light waves in the form of a modulated carrier wave with at least one modulation component of said wave constituting an output modulation signal having said predetermined modulation frequency and lying in the microwave frequency range whereby said modulation signal constitutes a microwave frequency output signal;

dispersion limitation means disposed in said optical cavity to limit the group propagation time dispersion of said light waves in said cavity; and

a filter in said optical cavity so that said laser oscillator can produce said light waves only within a filtering spectrum range having an associated filtering width which is less than half said gain spectrum width while still being greater than said intermode frequency, thereby avoiding frequency instabilities in said waves produced by said laser oscillator;

wherein said gain modulation imposes a predetermined phase to said output microwave frequency signal relative to said modulation current.

2. A source according to claim 1, wherein said amplification injection means limits said population inversion and said amplification of light waves to a gain amplification section of said light channel, said gain amplification section simultaneously constituting said gain modulation section and its optical length occupying a fraction which is less than one fourth of said optical length of the cavity, the remaining fraction of the length of said channel constituting a wave guide section.

3. A source according to claim 1, wherein said filtering width lies between twice and 100 times said intermode frequency such that said mode coupling takes place over a plurality of longitudinal modes.

4. A source according to claim 1, wherein said filter is a distributed Bragg reflector occupying a filtering section at one end of said optical cavity.

5. A source according to claim 1, wherein said light channel further comprises a second section which follows said gain amplification section, with the successive sections having dispersion values of opposite sign, said dispersion values being representative of the group propagation velocity dispersion of said light waves in said respective ones of said sections such that the interaction of said sections compensates the dispersions in order to constitute said dispersion limitation means.

6. A source according to claim 2, wherein said filtering spectrum range coincides with a frequency range in which a dispersion parameter has a negative value in said gain amplification/gain modulation section whereas it has a positive value in said waveguide section, the absolute value of said negative value being greater than three times said positive value, said parameter being the second derivative of the refractive index in said light channel relative to the wavelength of said light waves, thereby compensating the dispersion, whereby the two sections of said light channel cooperatively function as said dispersion limitation means.

7. A source according to claim 1 in which at least one of said two reflectors is semitransparent in order to allow an outlet wave to leave, said output wave being constituted by said carrier wave modulated by said output microwave frequency signal.

8. A source according to claim 7, wherein said amplification injection means provides low frequency control of said bias current, thereby enabling said output wave carrying said output microwave frequency signal to be amplitude modulated at low frequency, said source also including means for compensating optical length variation in order to inject a length compensating current into a phase modulation section, and in order to vary said compensation current simultaneously with said bias current so as to prevent said intermode frequency drifting.

9. A source according to claim 7, wherein said amplification injection means serves to vary said bias current in such a manner as to vary said intermode frequency so as to vary the phase of said output microwave frequency signal, said variation being accompanied by variation in the amplitude of said signal-carrying output wave.

10. A source according to claim 7, wherein it further includes phase modulation means receiving a low frequency phase modulation signal and controlling said cavity optical length in corresponding manner so as to modulate the phase of said output microwave frequency signal.

11. A source according to claim 10, wherein said phase modulation means further comprises:

a phase modulation section extending over at least a fraction of the length of said light channel with the refractive index in said channel in said phase modulation section being sensitive to the charge carrier density; and

phase modulation injection means for injecting a phase modulation electrical current through said channel in said modulation section in such a manner as to control the charge carrier density therein, said current constituting said phase modulation signal.

12. A source according to claim 7, wherein

said filter is a distributed Bragg reflector occupying a filtering section at one end of said light channel, the refractive index in said channel in said filtering section being sensitive to the charge carrier density;

and

said source further comprises

frequency modulation injection means for injecting a frequency modulation current through said channel in said filtering section in such a manner as to control the charge carrier density therein, thereby modulating the optical frequency of said carrier wave.

13. A source according to claim 7, further comprising:

a photodetector for receiving said output wave and for responding by providing a detection current representative of said output microwave frequency signal carried by said wave; and

link means for generating said modulation current from said detection current, in such a manner that said source constitutes a microwave frequency oscillator.