Reactive ion etching of silicon with hydrogen bromide

• US 5,007,982 A
• Filed: 07/11/1988
• Issued: 04/16/1991
• Est. Priority Date: 07/11/1988
• Status: Expired due to Term

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: North American Philips Corp. (Koninklijke Philips N.V.)
• Inventors: Tsou, Len-Yan
• Primary Examiner(s): Simmons, David A.
• Assistant Examiner(s): DANG, THI D
• Application Number:
  US07/217,536
• Time in Patent Office: 1,009 Days
• Field of Search: 156/646, 156/643, 156/657, 156/659.1, 156/644, 156/662
• US Class Current: 438/585
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers

Abstract

A plasma etching process using HBr is set forth in which etching of silicon and polysilicon in IC manufacture is significantly improved by the high etching selectivity for either silicon and polysilicon to both oxides and photoresist materials.

Claims

1. In a method of manufacturing semiconductor IC devices by etching comprising the steps of

(a) forming a composite structure by

(i) providing a silicon substrate,

(ii) forming a thin layer of silicon oxide on said silicon substrate,

(iii) forming a polysilicon layer on said oxide,

(iv) forming a mask of a photoresist on at least parts of said polysilicon layer,

(b) removing any surface oxides from said polysilicon layer with an oxide etching plasma, and

(c) then exposing the composite structure to a plasma containing only hydrogen bromide to selectively etch said polysilicon layer relative to said photoresist and said silicon oxide.

2. A method according to claim 1, further comprising after said steps (b) and (c) the steps of removing said photoresist from said composite structure, forming at least a second polysilicon layer on said composite structure, forming at least a second photoresist on at least parts of said second polysilicon layer, removing any surface oxides from said second polysilicon layer with said oxide etching plasma, and then exposing said second polysilicon layer to said hydrogen bromide plasma, wherein said second polysilicon layer is selectively etched relative to said second photoresist.

3. A method according to claim 2, wherein said oxide etching plasma is selected from the group consisting of freon, silicon tetrachloride and boron trichloride.

4. A method according to claim 2, wherein said polysilicon layer is doped or undoped.

5. A method according to claim 1, wherein said hydrogen bromide selectively etches said polysilicon layer relative to said mask at an etch rate ratio of at least 60:

1.

6. A method according to claim 5, wherein said polysilicon layer is selectively etched relative to said silicon oxide at a rate of 100:

1.

7. A method according to claim 1, wherein said oxide etching plasma is selected from the group consisting of freon, silicon tetrachloride and boron trichloride.

8. A method according to claim 1, wherein said polysilicon layer is doped or undoped.

9. A method according to claim 1, wherein said polysilicon layer is selectively etched relative to said silicon oxide at a ratio of 100:

1.

10. A method of manufacturing semiconductors by selectively etching a layer of a silicon-bearing material relative to a mask, comprising the steps of:

providing a patterned mask of a photoresist over a layer of silicon-bearing material to expose only areas to be etched,

removing any surface oxides from said silicon-bearing layer with an oxide etching plasma, and

then exposing said silicon-bearing layer to a plasma containing only hydrogen bromide to selectively etch said silicon-bearing layer relative to said mask.

11. A method according to claim 10, wherein said silicon-bearing material is selected from the group consisting of silicon, doped or undoped polysilicon, tantalum silicide, and titanium silicide.

12. A method according to claim 10, wherein said oxide etching plasma is selected from the group consisting of freon, silicon tetrachloride, and boron trichloride.

13. A method according to claim 10, wherein said hydrogen bromide selectively etches said silicon-bearing layer relative to said mask at an etch rate ratio of at least 60:

1.