Solar cell

• US 5,009,720 A
• Filed: 11/09/1989
• Issued: 04/23/1991
• Est. Priority Date: 11/16/1988
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Matsumoto, Hideo, Oda, Takao, Hokuyo, Shigeru
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/437,981
• Time in Patent Office: 530 Days
• Field of Search: 136/244, 136/255, 136/262, 437/2-5
• US Class Current: 136/255
• CPC Class Codes: H01L 27/1421 comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
• CPC Class Codes: H01L 31/0693 the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
• CPC Class Codes: H01L 31/1852 comprising a growth substrate not being an AIIIBV compound
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A solar cell for connection in series with a plurality of like cells to provide a solar generator which can produce a desired output voltage. The cell includes a photovoltaic section of compound semiconductor layers stacked on a semiconductor substrate to form a p-n junction and a protective diode section electrically isolated from the photovoltaic section by a p-n junction. The photovoltaic and diode sections are connected in parallel and reverse polarity. The protective diode bypasses current in the solar generator when no light is incident on the photovoltaic section in parallel with the respective diode.

Claims

1. A solar cell comprising:

a semiconductor substrate of a first conductivity type having opposed first and second major surfaces;

a first region of a second conductivity type extending from a portion of said first major surface into said substrate;

a second region of the first conductivity type disposed within said first region and including said first major surface;

a photovoltaic section disposed on said first major surface and spaced from said first region including a first compound semiconductor layer of the first conductivity type and a second compound semiconductor layer of the second conductivity type disposed on said first compound semiconductor layer;

a diode section disposed within said second region of first conductivity type and including diode regions of first and second conductivity type;

a first electrode connecting said second compound semiconductor layer in reverse polarity to said diode section through said second region of first conductivity type; and

a second electrode disposed on said first major surface of said substrate whereby said diode region of second conductivity type is electrically connected to said first conductivity type substrate.

2. A solar cell according to claim 1, wherein said diode section includes a compound semiconductor layer of first conductivity type disposed on said second region of first conductivity type and a compound semiconductor layer of second conductivity type.

3. A solar cell according to claim 2 wherein portions of said first major surface of said first conductivity type substrate including the junction between said first conductivity type substrate and said second conductivity type first region and the junction between said second conductivity type first region and said first conductivity type second region are shielded from incident light by at least one of said first and second electrodes.

4. A solar cell according to claim 2 wherein a portion of said first electrode is disposed on said second region for connection to an external conductor.

5. A solar cell according to claim 1, wherein said diode section is includes said second region of first conductivity type and a third region of second conductivity type disposed in said second region.

6. A solar cell according to claim 5 wherein portions of said first major surface of said first conductivity type substrate including the junction between said first conductivity type substrate and said second conductivity type first region, the junction between said second conductivity type first region and said first conductivity type second region, and the junction between said first conductivity type second region and said second conductivity type third region are shielded from incident light at least one of said first and second electrodes.

7. A solar cell according to claim 5 wherein a portion of said first electrode is disposed on said second region for connection to an external conductor.

8. A solar cell according to claim 1 wherein portions of said first major surface of said first conductivity type substrate including the junction between said first conductivity type substrate and said second conductivity type first region and the junction between said second conductivity type first region and said first conductivity type second region are shielded from incident light by at least one of said first and second electrodes.

9. A solar cell according to claim 1 wherein a portion of said first electrode is disposed on said second region for connection to an external conductor.

10. A solar cell according to claim 1 wherein said semiconductor substrate is selected from the group consisting of Si and GaAs.

11. A solar cell according to claim 1 wherein said compound semiconductor is one selected from the group consisting of GaAs, InP, CdS, CdTe, and CuInSe₂.

12. A method of making a solar cell comprising:

preparing a semiconductor substrate of a first conductivity type having first and second opposed major surfaces;

forming a first region of a second conductivity type opposite the first conductivity type in a portion of said substrate at said first major surface and a second region of the first conductivity type within said first region of the second conductivity type;

growing a first layer of a compound semiconductor of the first conductivity type on said first major surface including on said first and second regions;

growing a second layer of a compound semiconductor of the second conductivity type on said first compound semiconductor layer;

removing predetermined portion of said first and second compound semiconductor layers to form a protective diode section comprising said first and second compound semiconductor layers on said second region and to form a photovoltaic section comprising said first and second compound semiconductor layers on said first major surface outside said first region;

depositing metallic layers connecting said second compound semiconductor layer of said photovoltaic section with said second region and connecting said second compound semiconductor layer of said protective diode section with said first major surface of said first conductivity type substrate; and

depositing a metallic layer on said second major surface of said substrate.

13. A method of making a solar cell comprising:

preparing a semiconductor substrate of a first conductivity type having first and second opposed major surfaces;

forming a first region of a second conductivity type opposite the first conductivity type in a portion of said substrate at said first major surface and a second region of the second conductivity type within said first region of the second conductivity type;

depositing a crystal-growth preventing layer over said first region and part of said second region, leaving an exposed portion of the second region;

growing a first layer of a compound semiconductor of the first conductivity type on the exposed portion of said second portion and the portion of said first major surface which is not covered by said crystal-growth preventing layer;

growing a second layer of a compound semiconductor of the second conductivity type on said first compound semiconductor layer;

depositing metallic layers connecting said second one of said grown compound semiconductor layers on said second region with said first major surface of said first conductivity type substrate and connecting said second one of said first and second compound semiconductor layers on said first major surface portion which is not covered by said crystal-growth preventing layer with said second region; and

depositing a metallic layer on said second major surface of said substrate.

14. A method of making a solar cell comprising:

preparing a semiconductor substrate of a first conductivity type having first and second opposed surfaces;

forming a first region of a second conductivity type opposite the first conductivity type in a portion of said substrate at said first surface of said substrate;

forming a second region of the first conductivity type within said first region;

forming a third region of the second conductivity type within said second region;

growing a first layer of a compound semiconductor of the first conductivity type on said first major surface including the surfaces of said first, second, and third regions and a second layer of a compound semiconductor of the second conductivity type on said first compound semiconductor layer;

removing said first and second compound semiconductor layers on at least a portion of said first major surface including the surfaces of said first, second, and third regions;

depositing metallic layers connecting the second compound semiconductor layer disposed on said first major surface with said second region and connecting said third region with said first major surface of said first conductivity type; and

depositing a metallic layer on said second major surface of said substrate.

15. A method of making a solar cell comprising:

preparing a semiconductor substrate of a first conductivity type having first and second opposed major surfaces;

forming a first region of a second conductivity type opposite the first conductivity type in a portion of said substrate at said first major surface, a second region of the first conductivity type within said first region, and a third region of second conductivity type within the boundary of said second region;

forming a crystal-growth preventing layer over at least a portion of said first major surface including the surfaces of said first, second, and third regions;

growing a first layer of a compound semiconductor of the first conductivity type on said first major surface of said substrate

growing a second layer of a compound semiconductor of the second conductivity type on said first compound semiconductor layer;

depositing metallic layers connecting said second compound semiconductor layer with said second region and connecting said third region with said first major surface of said first conducting type substrate; and

depositing a metallic layer on said second major surface of said substrate.