Inrush current limiting circuit

• US 5,010,293 A
• Filed: 11/20/1989
• Issued: 04/23/1991
• Est. Priority Date: 11/20/1989
• Status: Expired due to Term

• Current Assignee: Ericsson Raynet Corporation A Delaware General Partnership (Telefonaktiebolaget LM Ericsson)
• Original Assignee: Raynet Corp. (Telefonaktiebolaget LM Ericsson)
• Inventors: Ellersick, William F.
• Primary Examiner(s): Wong, Peter S.
• Application Number:
  US07/439,596
• Time in Patent Office: 519 Days
• Field of Search: 363/50, 323/277, 323/278, 323/908, 361/56, 361/57, 361/58, 361/90, 361/91, 361/100, 361/101, 361/111
• US Class Current: 323/278
• CPC Class Codes: G05F 1/573 with overcurrent detector
• CPC Class Codes: G05F 1/613 using semiconductor devices in parallel with the load as final control devices G05F1/461 takes precedence
• CPC Class Codes: H02H 9/001 limiting speed of change of electric quantities, e.g. soft switching on or off progressive control of electronic switches for eliminating interferences H03K17/16
• CPC Class Codes: Y10S 323/908 Inrush current limiters

Abstract

An inrush current limiting circuit in accordance with the principles of the present invention limits initial current flow to a highly initially reactive power load. The current limiting circuit comprises a plug in connection to a power source and two conductor paths leading from the plug in connection. A power FET has a source element to drain element path in series with one of the conductor paths and has a gate connection. A bipolar transistor is connected to shunt the gate element of the power FET to the potential at its source element when the bipolar transistor is conducting, thereby to limit the current passing through the power FET. A sense resistor is in series with one of the conductor paths for controlling a base element of the bipolar transistor to cause it to conduct when current through the sense resistor exceeds a predetermined amount. The bias resistor is connected to the gate element of the power FET normally to bias it into full conduction between the source and drain elements when the bipolar transistor is not conducting.

Claims

1. An inrush current limiting circuit for limiting initial current flow to a power load characterized by a high capacitive reactance otherwise causing excessive inrush current, the circuit comprising:

plug in connection means to a power source and two conductor paths leading from the plug in connection means,

power FET means having a source element to drain element path in series with one of the conductor paths and having a gate connection,

active current sense means for sensing excessive inrush current including bipolar transistor means connected to shunt the gate element of the power FET means to the potential at its source element when the bipolar transistor means is conducting, and sense resistor means in series with one of the conductor paths for controlling a base element of the bipolar transistor means to cause the bipolar transistor means to conduct when current through the sense resistor exceeds a predetermined amount, and,

bias resistor means connected to the gate element of the power FET means normally to bias the power FET means into full conduction between the source and drain elements when the bipolar transistor means is not conducting.

2. The inrush current limiting circuit set forth in claim 1 wherein the power source comprises a common battery supply within a telecommunications system.

3. The inrush current limiting circuit set forth in claim 2 wherein the potential of the common battery supply is approximately minus 48 volts.

4. The inrush current limiting circuit set forth in claim 1 wherein the highly initially reactive power load comprises a DC to DC converter module for converting the power source potential to a lower voltage.

5. The inrush current limiting circuit set forth in claim 1 further comprising a resistor means in series with the bias resistor means, thereby forming a series voltage divider network across the power source and downstream of the sense resistor means.

6. The inrush current limiting circuit set forth in claim 1 further comprising zener diode voltage limiting means in series with the bias resistor means, thereby forming a series voltage divider network across the power source and downstream of the sense resistor means.

7. The inrush current limiting circuit set forth in claim 1 further comprising negative feedback resistor means in series with an emitter element of the bipolar transistor means, the negative feedback resistor means for reducing the gain of the active current sense means in order to inhibit the power FET means from oscillating between fully on and fully off incident to at connection of the plug-in connection means to the power source.

8. An inrush current limiting circuit for limiting inrush current from a common battery power supply within a telecommunications system to a DC to DC power converter module of a plug-in circuit board having plug-in connection pins for making electrical contact at a backplane with the common battery supply voltage, the circuit including:

a return path between the common node of the power supply and the common node of the DC to DC power converter module,

a supply path between a supply node of the power supply and the supply voltage node of the DC to DC power converter module,

an enhancement mode power FET means having a source to drain resistance path in series with the supply path, and having a gate connected through bias resistor means to the common path, thereby normally to be in a conducting state and to manifest very low resistance across the source to drain resistance path,

current sense resistor means in series with the supply path upstream of the enhancement mode power FET means,

NPN bipolar transistor means having an emitter element connected to the supply path through a negative feedback series resistor means upstream of the current sense resistor means, having a base element connected to the supply path between the current sense resistor means and the source to drain resistance path of the power FET means, and having a collector element connected to the gate element of the FET means, the negative feedback series resistor means for reducing the gain of the inrush current limiting circuit thereby to inhibit the power FET means from oscillating between fully on and fully off.

9. The inrush current limiting circuit set forth in claim 8 wherein the potential of the common battery power supply is approximately minus 48 volts.

10. The inrush current limiting circuit set forth in claim 8 further comprising a resistor means connected between the gate element of the power FET means and the base element of the bipolar transistor means.

11. The inrush current limiting circuit set forth in claim 8 further comprising zener diode means connected between the gate element of the power FET means and the base element of the bipolar transistor means.

12. The inrush current limiting circuit set forth in claim 8 wherein inrush current is limited to be not greater than approximately two Amperes.

13. The inrush current limiting circuit set forth in claim 10 wherein the bias resistor means has a resistance of approximately 22,000 ohms, the current sense resistor means has a resistance of approximately 0.39 ohms, the negative feedback series resistor means has a resistance of approximately 33 ohms, and the resistor means connected between the gate element of the power FET means and the base element of the bipolar transistor means has a resistance of approximately 4,700 ohms;

and, wherein the inrush current is limited to be not greater than approximately two amperes.