Insulator separated vertical CMOS
First Claim
1. A complementary semiconductor device structure comprising:
- a substrate of a first conductivity type;
a first channel layer of a second conductivity type formed on the surface of said substrate;
a first source/drain layer of said first conductivity type formed on the surface of said first channel layer;
an insulating layer formed on the surface of said first source/drain layer;
a second source/drain layer of said second conductivity type formed on the surface of said insulating layer;
a second channel layer of said first conductivity type formed on the surface of said second source/drain layer;
a third source/drain layer of said second conductivity type formed on the surface of said second channel layer; and
gate circuitry vertically disposed on an edge perpendicular to the plane of and adjacent to said first and second channel layers, and insulated therefrom.
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Accused Products
Abstract
A complementary semiconductor structure comprises a substrate of a first conductivity type upon which a first channel layer of a second conductivity type is formed. The first source/drain layer of the first conductivity type is formed on the surface of the first channel layer and an insulating layer is formed on the surface of the first source/drain layer. A second source/drain layer of the second conductivity type is formed on the surface of the insulating layer and a second channel layer of said first conductivity is formed on the surface of the second source/drain layer. A third source/drain layer of the second conductivity type is formed on the surface of the second channel layer. Gate circuitry is vertically disposed on an edge perpendicular to the plane and adjacent to the first and second channel layers and insulated therefrom.
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Citations
16 Claims
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1. A complementary semiconductor device structure comprising:
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a substrate of a first conductivity type; a first channel layer of a second conductivity type formed on the surface of said substrate; a first source/drain layer of said first conductivity type formed on the surface of said first channel layer; an insulating layer formed on the surface of said first source/drain layer; a second source/drain layer of said second conductivity type formed on the surface of said insulating layer; a second channel layer of said first conductivity type formed on the surface of said second source/drain layer; a third source/drain layer of said second conductivity type formed on the surface of said second channel layer; and gate circuitry vertically disposed on an edge perpendicular to the plane of and adjacent to said first and second channel layers, and insulated therefrom. - View Dependent Claims (2, 3, 4, 5, 6, 7, 16)
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8. A semiconductor device comprising:
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a substrate; monocrystalline semiconductor mesas at the surface of the substrate; a first thin film conductive layer disposed below the surface of said mesas at a first predetermined depth to provide an electrical connection to predetermined ones of said mesas; and a second thin film conductive layer disposed below the surface of said mesas at a second predetermined depth to provide an electrical connection to predetermined ones of said mesas, said second contact electrically insulated from said first contact. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification