Ion beam irradiation apparatus

• US 5,012,111 A
• Filed: 06/15/1989
• Issued: 04/30/1991
• Est. Priority Date: 06/21/1988
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Ueda, Kazuhiro
• Primary Examiner(s): Berman, Jack I.
• Assistant Examiner(s): Nguyen, Kiet T.
• Application Number:
  US07/366,539
• Time in Patent Office: 684 Days
• Field of Search: 250/492.3, 250/492.1, 250/492.21, 250/492.2, 363/58, 363/56
• US Class Current: 250/492.3
• CPC Class Codes: A61N 2005/1087 Ions; Protons
• CPC Class Codes: A61N 5/10 X-ray therapy; Gamma-ray therapy; Particle-irradiation therapy A61N5/01 takes precedence
• CPC Class Codes: A61N 5/1043 Scanning the radiation beam, e.g. spot scanning or raster scanning
• CPC Class Codes: G21K 1/087 by electrical means
• CPC Class Codes: G21K 5/10 with provision for relative movement of beam source and object to be irradiated

Abstract

An ion-beam irradiation apparatus is provided which has x- and y-deflection magnets to wobble an ion beam for uniformly irradiating a field exceeding the beam diameter in size. An exciting current is supplied to the x- and y-deflection magnets independently, and the exciting current inlcudes both an ac component and a dc bias component. Suitable control of these components enables the irradiated field to be varied in shape and location. In particular, racetrack-shaped fields can be irradiated by adding dc components to triangular ac components. When used in cancer radio therapy, this apparatus enables the irradiated field to be moved quickly from one location to another, and to be matched with the shape of the tumor. Benefits of this apparatus include short treatment times and efficient use of the ion beam, so that substantially all of the ion beams may be delivered to the target.

Claims

1. An ion beam irradiation apparatus comprising:

a particle accelerator for developing an ion beam;

first deflection means disposed in the path of said ion beam, for deflecting said ion beam in a first direction perpendicular to the axis of the path of said ion beam;

second deflection means disposed in the path of said ion beam, for deflecting said ion beam in a second direction perpendicular to the axis of the path of said ion beam and perpendicular to said first direction in which the path of said ion beam is deflected by said first deflection means;

a first power supply for supplying a first exciting current having a first ac component and a first dc bias component to said first deflection means;

a second power supply for supplying a second exciting current having a second ac component and a second dc bias component to said second deflection means; and

control means for varying magnetic fields developed by said first and second deflection means in response to the amplitude and phase of said first and second ac components and the polarity and magnitude of said first and second dc bias components and thereby controlling the size and the direction scanned by said ion beam.

2. The ion-beam irradiation apparatus of claim 1, whereby said first and second ac components comprise triangular waveforms.

3. The ion-beam irradiation apparatus of claim 2, wherein a dc bias having a first polarity is added to the ascending segments of said triangular waveforms, and a dc bias having a second polarity opposite to said first polarity is added to the descending segments of said triangular waveforms.

4. The ion-beam irradiation apparatus of claim 3, wherein the triangular waveforms supplied to said first deflection means and said second deflection means have opposite dc biases.

5. The ion-beam irradiation apparatus of claim 1, wherein each of said first and second power supplies respectively comprise:

a voltage source;

a plurality of inverter circuits connected in parallel to said voltage source for receiving current from said voltage source and generating different voltages, the polarity of which can be switched under the control of said control means; and

a plurality of coupling transformers corresponding to said plurality of inverter circuits, the primary windings of said transformers receive the voltages generated by said inverter circuits corresponding thereto and the secondary windings of said transformers are connected in series with each other.

6. The ion-beam irradiation apparatus of claim 5, wherein each of said plurality inverter circuits comprises a first pair of transistors connected in series between the position and negative terminals of said voltage source and a second pair of transistors connected in series between the positive and negative terminals of said voltage source in parallel with said first pair, one end of the primary winding of said coupling transformer corresponding to said inverter circuit being connected to a point disposed between said pair of transistors, the other end of the primary winding of said coupling transformer corresponding to said inverter circuit being connected to a point disposed between said second pair of transistors, and the base electrodes of said first and second pairs of transistors being connected to said control means.

7. The ion-beam irradiation apparatus of claim 5, wherein a plurality of resistors connect each of said plurality of inverter circuits to the primary winding of each of said plurality of coupling transformers, said plurality of resistors being set so that the amplitude of the different voltages generated from said plurality of inverter circuits vary gradually from a low value to a high value and back to said low value.

8. A method for irradiating an ion beam, comprising the steps of:

(a) developing an ion beam;

(b) developing a first exciting current having a first ac component and a first dc bias component;

(c) deflecting the path of said ion beam in a first direction perpendicular to the axis of the path of said ion beam in response to said step (b);

(d) developing a second exciting current having a second ac component and a second dc bias component;

(e) deflecting the path of said ion beam in a second direction perpendicular to the axis of the path of said ion beam and perpendicular to said first direction in which the path of said ion beam is deflected at said step (c) in response to said step (d); and

(f) varying magnetic fields developed at said steps (c) and (e) for deflecting the path of said ion beam in response to the amplitude and phase of said first and second ac components and the polarity and magnitude of said first and second dc bias components and thereby controlling the size and the direction scanned by said ion beam.