High-power rf switching system

• US 5,012,123 A
• Filed: 03/29/1989
• Issued: 04/30/1991
• Est. Priority Date: 03/29/1989
• Status: Expired due to Term

• Current Assignee: Hittite Microwave Corporation (Analog Devices, Inc.)
• Original Assignee: Hittite Microwave Corporation (Analog Devices, Inc.)
• Inventors: Katzin, Peter J., Ayasli, Yalcin
• Primary Examiner(s): Pellinen, A. D.
• Assistant Examiner(s): Osborn, David
• Application Number:
  US07/330,114
• Time in Patent Office: 762 Days
• Field of Search: 307/248, 307/570-573, 307/581-585, 307/497, 307/296.3, 307/296.4, 307/296.5, 307/98-100, 307/112, 307/113, 307/116, 307/254, 330/277, 330/300, 331/62, 331/74, 331/75, 331/108 R, 331/116 FE, 331/117 FE
• US Class Current: 307/112
• CPC Class Codes: H03K 17/102 in field-effect transistor switches
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

A switching system for controlling rf energy through an rf transmission medium including a plurality of semiconductor switching devices connected in a series configuration with the primary electrodes connected in series, and means for providing graduated bias on the control electrodes for establishing an equal control voltage on each device between its control electrode and one of its primary electrodes.

Claims

1. A switching system for controlling rf energy through an rf transmission medium, comprising:

a plurality of semiconductor switching devices connected in a series configuration with the primary electrodes connected in series;

means for providing a graduated bias on the control electrodes of said devices to establish an equal control voltage on each device between its control electrode and one of its primary electrodes for increasing the voltage capacity of said switching system and the power capacity of said rf transmission medium;

said means for providing a graduated bias including a voltage divider network connected across the control electrodes of said semiconductor devices; and

said voltage divider network including a plurality of series-connected inductors.

2. The switching system of claim 1 further including a ground return connected between said transmission medium and ground.

3. The switching system of claim 2 in which said ground return is also connected to a primary electrode of at least one of said semiconductor devices.

4. The switching system of claim 2 in which said ground return includes a plurality of series-connected resistors connected in parallel with said semiconductor switching devices.

5. The switching system of claim 1 in which said semiconductor devices are field effect transistors.

6. The switching system of claim 5 in which the graduated bias is provided to the gates of said transistors.

7. The switching system of claim 1 in which said voltage divider network includes a plurality of resistors connected in series with the control electrodes of said semiconductor devices.

8. The switching system of claim 7 in which said are non-linear, saturating, semiconductor resistors.

9. The switching system of claim 1 in which said semiconductor switching devices are connected between said transmission medium and ground.

10. The switching system of claim 1 further including means for compensating for the parasitic capacitance of said semiconductor devices.

11. The switching system of claim 10 in which said means for compensating includes a plurality of series-connected capacitors connected across the primary electrodes of said semiconductor switching devices.

12. The switching system of claim 1 in which said means for providing a graduated bias includes a second plurality of semiconductor switching devices connected in a series configuration with the primary electrodes connected in series, said second plurality of semiconductor switching devices connected between a control electrode bias source and the control electrodes of the plurality of semiconductor switching devices;

said means for providing a graduated bias further including a voltage divider circuit which includes a resistor network connected between a second control electrode bias source and the control electrodes of said second plurality of semiconductor devices.

13. A switching system for controlling rf energy through an rf transmission medium and increasing the allowable voltage in said medium comprising:

a plurality of identical field effect transistors connected in a series configuration with the drains and sources connected in series to form a conductive path between the transmission medium and ground; and

a bias network connected between a bias source and the gates of said transistors for biasing the gates to provide synchronous switching of said transistors to increase the voltage capacity of said switching system and the power-capacity of said transmission medium said bias network including a plurality of series-connected inductors.

14. The switching system of claim 13 in which said bias network provides an arithmetically increasing bias to the gates of said transistors.