Film forming method and film forming device

• US 5,015,330 A
• Filed: 02/28/1990
• Issued: 05/14/1991
• Est. Priority Date: 02/28/1989
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited, Tokyo Electron Sagami Limited (Tokyo Electron Limited), Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Tokyo Electron Limited, Tokyo Electron Sagami Limited (Tokyo Electron Limited), Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Miyazaki, Shinji, Okumura, Katsuya, Tanaka, Susumu, Kumagai, Yoshio, Moriya, Takahiko
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/486,416
• Time in Patent Office: 440 Days
• Field of Search: 156/643, 156/646, 156/657, 156/345, 156/662, 134/1, 134/31, 204/192.32, 204/192.37, 204/298, 427/38, 427/39, 427/307, 427/309, 118/729, 118/620, 118/50.1, 118/730
• US Class Current: 438/694
• CPC Class Codes: C23C 16/0245 by etching with a plasma
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: Y10S 156/917 Differential etching apparatus having a barrel reactor
• CPC Class Codes: Y10S 438/905 Cleaning of reaction chamber
• CPC Class Codes: Y10S 438/913 Diverse treatments performed in unitary chamber

Abstract

A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching, exhausting the etching gas after stopping supply of the etching gas so as to stop making of the plasma, and supplying a film forming gas in the reaction container without rendering the reaction container open to air so as to form a film on the objects.

Claims

1. A film forming method comprising the steps of:

placing a plurality of objects to be processed in a reaction container;

supplying an etching gas in said reaction container;

making said etching gas into a plasma;

removing a natural oxidization originated film on said objects to be processed under a heating condition by said plasma;

exhausting said etching gas after stopping supply of said etching gas so as to stop making of said plasma; and

supplying a film forming gas in said reaction container without rendering said reaction container open to air so as to form a film on said objects.

2. A film forming device for performing a predetermined treatment on a plurality of objects to be processed accommodated in a reaction container using a process gas and a reactive gas, said device comprising:

a plasma mechanism, provided outside said reaction container, for making said process gas into a plasma; and

a plasma transporting tube for guiding process-gas plasma provided by said plasma mechanism inside said reaction container in a direction parallel to respective surfaces of said objects on which a film is to be formed.

3. A film forming method comprising the steps of:

making an etching gas into a plasma by means of a plasma mechanism provided outside a reaction chamber;

introducing said etching gas made into plasma into a reaction container and removing a surface layer of each of a plurality of objects to be processed by said etching gas made into plasma; and

introducing a reactive gas into said reaction container to form a film on a cleaned surface of said objects to be processed.

4. A film forming method according to claim 3, wherein the film formed on each of said objects to be processed is formed by a process gas made into a plasma by said plasma mechanism and said respective gas.

5. A film forming method according to claim 4, wherein after said etching gas is made into a plasma by said plasma mechanism, said plurality of objects to be processed are etched using said plasma of said etching gas.

6. A film forming method according to claim 5, wherein an interior of said reaction container is cleaned by said plasma of said etching gas.