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Lateral MOS controlled thyristor

  • US 5,016,076 A
  • Filed: 02/28/1990
  • Issued: 05/14/1991
  • Est. Priority Date: 02/28/1990
  • Status: Expired due to Term
First Claim
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1. A lateral MOS controlled thyristor, having first and second output terminals and a gate, disposed in the major surface of a high-resistivity semiconductor epitaxial layer (20) of a first conductivity type, is characterized by:

  • first (11) and second (12) spaced-apart regions of a second conductivity type in the epitaxial layer and adjacent to a major surface thereof;

    a third region (13) of the first conductivity type within the first region and adjacent to the major surface;

    a fourth region (14) of the second conductivity type in contact with the second region, disposed in the epitaxial layer and adjacent to the major surface;

    a rectifying contact (22o, 15 or 22R) with the second region; and

    ,a conductive layer (17) overlaying and insulated from selected portions of the epitaxial layer and the first and fourth regions;

    wherein the first and third regions are connected together to form the first output terminal, the rectifying contact forms the second output terminal, and the conductive layer forms the gate.

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