Microwave plasma chemical vapor deposition apparatus for forming functional deposited film with means for stabilizing plasma discharge

• US 5,016,565 A
• Filed: 08/29/1989
• Issued: 05/21/1991
• Est. Priority Date: 09/01/1988
• Status: Expired due to Term

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Matsuda, Koichi, Otoshi, Hirokazu, Okamura, Ryuji, Saitoh, Keishi
• Primary Examiner(s): Morgenstern, Norman
• Assistant Examiner(s): Owens, Terry J.
• Application Number:
  US07/399,900
• Time in Patent Office: 630 Days
• Field of Search: 118/663, 118/723, 156/345, 156/643, 427/38, 427/39, 427/45.1
• US Class Current: 118/723.0MW
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A microwave plasma CVD apparatus for forming a functional deposited film comprises a film-forming chamber having a discharge space, a substrate holder, and apparatus for introducing a film-forming raw material gas into the film-forming chamber, for transmitting microwaves into the film-forming chamber to apply microwave energy to the raw material gas so that the raw material gas is converted into plasma, and for simultaneously applying a bias voltage to the plasma generated in the discharge space from an external system to control the plasma potential. A mechanism is provided for temporarily suspending the application of the bias voltage in the case when abnormal discharge occurs, while monitoring the fluctuation of the bias voltage to be applied to the plasma, to thereby inhibit the occurrence of abnormal discharge.

Claims

1. In a microwave plasma CVD apparatus for forming a functional deposited film which comprises a film-forming chamber having a discharge space, a substrate holder for a substrate to be positioned thereon, within said discharge space, means for introducing a film-forming raw material gas into the film-forming chamber, means, including a microwave power source, for transmitting microwaves into the flim-forming chamber to apply microwave energy to the raw material gas so that the raw material gas is converted into plasma, and means, including a bias electrode positioned in said film-forming chamber and a bias power source, for simultaneously applying a bias voltage to the plasma generated in the discharge space to control the plasma potential, the improvement comprising:

means for monitoring fluctuation of the bias voltage applied to the plasma, and means for temporarily suspending the application of the bias voltage to the plasma in response to said monitoring means to prevent the occurrence of abnormal discharge.

2. The apparatus according to claim 1, wherein said means for temporarily suspending the application of the bias voltage comprises a spark killer.

3. The apparatus according to claim 2, wherein said spark killer includes a mechanism comprising:

a computer;

a microwave power stabilizing feedback unit;

a stabilizing resistor connected between said bias power source and said spark killer;

a cable for feeding a dummy signal from the spark killer to the microwave power stabilizing feedback unit;

a cable from said bias power source for applying a bias voltage to said bias electrode through the spark killer;

a bias current detecting cable for feeding a signal from the bias power source to the microwave power stabilizing feedback unit;

a cable for feeding a signal to control the microwave power stabilizing feedback unit by the computer; and

a cable for feeding a signal from the microwave power stabilizer feedback unit to control said microwave power source.