Vertical cavity semiconductor lasers

• US 5,018,157 A
• Filed: 01/30/1990
• Issued: 05/21/1991
• Est. Priority Date: 01/30/1990
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Deppe, Dennis G., Dupuis, Russell D., Schubert, Erdmann F.
• Primary Examiner(s): Epps, Georgia
• Application Number:
  US07/472,145
• Time in Patent Office: 476 Days
• Field of Search: 372/43, 372/45, 372/96, 372/99, 357/4, 357/17
• US Class Current: 372/45.013
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/3086 doping of the active layer
• CPC Class Codes: H01S 5/32391 based on In(Ga)(As)P

Abstract

In a vertical cavity laser, such as an InP based vertical laser, the energy bandgap in the active region can be made equal to or larger than the bandgap in a semiconductor mirror stack by virtue of degenerate doping in the stack sufficient to suppress electronic band-to-band optical absorption. For example, the active region of an InP based laser can be lattice-matched GaInAs, GaInAsP, or a multiple quantum well structure composed of layers of InP and GaInAs--with the mirror stack composed of alternating layers of InP and degenerately doped n-type lattice-matched GaInAs or GaInAsP.

Claims

1. In a vertical cavity semiconductor laser an active region which generates optical radiation and a mirror stack which reflects the radiation, the stack containing a plurality of spatial periods each of which consists of essentially a quarter-wavelength layer of first semiconductor material and a quarter-wavelength layer of second semiconductor material which is different from the first,

the layer of second material having energy a bandgap that is equal to or less than the energy per photon of the radiation, and

the layer of second material containing a concentration of impurities sufficient to render the second material degenerate and significantly less absorptive of the radiation.

2. A laser according to claim 1 in which the first material is InP, and the second material and the active region are both lattice-matched GaInAs.

3. A laser according to claim 1 in which the first material is InP and the second material is lattice-matched GaInAsP.

4. In a vertical cavity laser:

(a) an InP semiconductor body having essentially planar top and bottom major surfaces;

(b) a mirror stack located on the top surface of the body, the stack being composed of a plurality of alternating layers of n-type InP and lattice-matched n-type GaInAs or GaInAsP;

(c) an active region composed essentially of lattice-matched GaInAs or lattice-matched GaInAsP, or quantum wells of InP and lattice-matched GaInAs or lattice-matched GaInAsP, the active region separated from the top surface of the mirror stack by an n-type optical cladding layer of InP, the doping level of the active region being less than that of the cladding layer, and the doping level of the cladding layer being less than that of the lattice-matched GaInAs or GaInAsP in the mirror stack, the layers of GaInAs or GaInAsP in the mirror stack having doping levels that are sufficiently high to render them degenerately doped.

5. A vertical cavity laser in accordance with claim 4 further comprising:

an ohmic contact layer, located on the bottom major surface of the body, having an aperture therein to enable the exit therethrough of optical radiation generated in the active region.

6. A vertical cavity laser in accordance with claim 5 further comprising:

a p-type optical cladding layer of InP located on the top surface of the active region.

7. A vertical cavity laser in accordance with claim 6 further comprising:

another ohmic contact layer, located on the top surface of the p-type optical cladding layer.

8. A vertical cavity laser in accordance with claim 7 further comprising:

a p-type optical cladding layer of InP located on the top surface of the active region.

9. A vertical cavity laser in accordance with claim 4 in which the doping level in the degenerate GaInAs or GaInAsP in the mirror stack is at least about 1E19 per cubic centimeter.

10. A vertical cavity laser in accordance with claim 5 in which the doping level in the degenerate GaInAs or GaInAsP in the mirror stack is at least about 1E19 per cubic centimeter.

11. A vertical cavity laser in accordance with claim 6 in which the doping level in the degenerated GaInAs or GaInAsP in the mirror stack is at least about 1E19 per cubic centimeter.

12. A vertical cavity laser in accordance with claim 7 in which the doping level in the degenerate GaInAs or GaInAsP in the mirror stack is at least about 1E19 per cubic centimeter.

13. A vertical cavity in acordance with claim 8 in which the doping level in the degenerate GaInAs OR GaInAsP in the mirror stack is at least about 1E19 per cubic centimeter.

14. A vertical cavity laser in accordance with claim 4 in which the doping level in the degenerate GaInAs or GaInAsP in the mirror stack is at least about 1E20 per cubic centimeter.

15. A vertical cavity laser in accordance with claim 5 in which the doping level in the degenerate GaInAs or GaInAsP in the mirror stack is at least about 1E20 per cubic centimeter.

16. A vertical cavity laser in accordance with claim 6 in which the doping level in the degenerate GaInAs or GaInAsP in the mirror stack is at least about 1E20 per cubic centimeter.

17. A vertical cavity laser in accordance with claim 7 in which the doping level in the degenerate GaInAs or GaInAsP in the mirror stack is at least about 1E20 per cubic centimeter.

18. A vertical cavity laser in accordance with claim 8 in which the doping level in the degenerate GaInAs or GaInAsP in the mirror stack is at least about 1E20 per cubic centimeter.