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Process for selectively growing thin metallic film of copper or gold

  • US 5,019,531 A
  • Filed: 05/19/1989
  • Issued: 05/28/1991
  • Est. Priority Date: 05/23/1988
  • Status: Expired due to Term
First Claim
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1. A process for growing a thin metallic film, comprising the steps of:

  • maintaining a substrate, having on the surface thereof a first material consisting of metal or a metallic silicide and a second material selected from the group consisting of silicon oxide, silicon nitride and titanium nitride, under a reduced pressure;

    heating an organic complex or organometallic compound of gold or copper as a starting material to evaporate the same;

    heating said substrate to a temperature equal to or higher than the decomposition temperature, on said first material, of a vapor of said evaporated starting material; and

    feeding a gas stream consisting essentially of the vapor of said evaporated starting material being kept at a temperature lower than the decomposition temperature thereof and a reducing gas onto said heated substrate to selectively grow a thin metallic film of gold or copper only on the surface of said first material.

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