Fast shutter for protection from electromagnetic radiation

• US 5,022,742 A
• Filed: 10/03/1983
• Issued: 06/11/1991
• Est. Priority Date: 10/03/1983
• Status: Expired due to Fees

• Current Assignee: the united states of america as represented by the secretary of the navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Hains, Franklin D.
• Primary Examiner(s): LAROCHE, EUGENE
• Application Number:
  US06/538,617
• Time in Patent Office: 2,808 Days
• Field of Search: 350/355-356, 350/363, 350/388, 350/390, 350/393, 350/377, 333/17 L, 333/211, 333/12, 333/17 R, 333/81 A, 333/81 B, 357/2, 361/118-119, 372/103
• US Class Current: 359/245
• CPC Class Codes: C03C 17/02 with glass C03C17/34, C03C17/44 take precedence
• CPC Class Codes: C03C 17/09 by deposition from the vapour phase
• CPC Class Codes: C03C 2217/27 Mixtures of metals, alloys
• CPC Class Codes: C03C 2217/289 Selenides, tellurides
• CPC Class Codes: C03C 2218/154 by sputtering
• CPC Class Codes: G02F 1/015 based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction G02F1/03 takes precedence
• CPC Class Codes: G21F 3/00 Shielding characterised by its physical form, e.g. granules, or shape of the material

Abstract

A solid state shutter for blocking EMP is disclosed. The shutter includes thin films of amorphous semiconductor material fro the Group V or VI elements deposited on a silicon dioxide substrate. An antenna senses incident EMP causing a trigger circuit to apply a voltage across the thin films. The thin films switch from a state of high resistance to a state of low resistance for blocking passage of the EMP.

Claims

1. A device for modulating electromagnetic radiation comprising:

a substrate of a material transparent to substantially all electromagnetic wave frequencies;

a first thin film of an amorphous semiconductor chalogenide alloy glass deposited on one surface of said substrate;

a second thin film of an amorphous semiconductor chalogenide alloy glass material deposited on the opposite surface of said substrate, and;

means for applying a first predetermined voltage across said first film and applying a second predetermined voltage across said second film in response to electromagnetic radiation having a frequency greater than a predetermined value and incident on either of said thin films such that current flow through said first film is in a direction opposite to the current flow through said second film.

2. The device as defined in claim 1 wherein the substrate is silicon dioxide.

3. The device as defined in claim 1 wherein said first and second thin films are alloys made from the system consisting of the elements Te-As-Ge-Si.

4. The device as defined in claim 1 wherein said thin films are Te₄₀ As₃₅ Ge₇ Si₁₈.

5. The device as defined in claim 3 wherein the thickness of the thin films is at least 1 micron.

6. The device as defined in claim 1 wherein said means for applying the predetermined voltage comprises:

an antenna tuned to generate an output signal in response to the incident electromagnetic radiation having a frequency greater than the predetermined value, and;

a trigger circuit having an input coupled to the antenna output signal adapted to generate an output switching voltage in response to antenna signals representing electromagnetic radiation frequencies above the predetermined value, said trigger circuit output coupled to each of said first and second thin films for applying the output switching voltage across said films.

7. A shutter for preventing the passage of EMP comprising:

a substrate having opposed surfaces of a material that is substantially transparent to all electromagnetic wave frequencies;

a first thin film of an amorphous semiconductor chalogenide alloy glass being normally transparent to all electromagnetic frequencies deposited on one of the substrate surfaces;

a second thin film of the amorphous semiconductor chalogenide alloy glass deposited on the opposing surface of said substrate, said thin films adapted to become opaque to incident electromagnetic waves having frequencies above a predetermined value upon application of a switching voltage of at least a predetermined threshold level across each of said thin films, and;

means for applying the switching voltage across each of said thin films in response to the predetermined incident electromagnetic waves said switching voltage in said first and second films being such that current flow in said first film in opposite to said current flow in said second film.

8. The shutter as defined in claim 7 wherein the substrate is silicon dioxide.

9. The shutter as defined in claim 7 wherein said first and second thin films are alloys made from the system consisting of the elements Te-As-Ge-Si.

10. The shutter as defined in claim 7 wherein the thin films are Te₄₀ As₃₅ Ge₇ Si₁₈.

11. The shutter as defined in claim 9 wherein the thickness of said first and second thin films is at least 1 micron.

12. The shutter as defined in claim 7 wherein said means for applying the switching voltage comprises:

an antenna tuned to generate an output signal in response to the predetermined incident electromagnetic wave, and;

a trigger circuit having an input coupled to the antenna output signal adapted to generate the output switching voltage in response to the antenna signal, said trigger circuit output coupled to each of said first and second thin films for applying the output switching voltage across said films.

13. A solid state shutter for modulating electromagnetic waves in response to EMP comprising:

a substrate of an electrically insulating electromagnetic wave transparent material having at least two opposed, flat surfaces;

a first thin film of an amorphous semiconductor chalogenide alloy glass chosen from the system consisting of the elements Te-As-Ge-Si deposited on a portion of one of the substrate surfaces;

a second thin film of an amorphous semiconductor chalogenide alloy glass deposited on a portion of the opposing substrate surface opposite said first thin film, said thin films being transparent to electromagnetic waves when in a normal non-crystalline state and adapted to become opaque to electromagnetic waves upon application of a switching voltage across each of said films of a magnitude equal to at least a predetermined threshold level;

a first pair of electrodes deposited on the substrate in electrical contact with said first thin film and spaced apart across said first film so as to define an aperture having a width for passing electromagnetic waves having wavelengths greater than a predetermined value;

a second pair of electrodes deposited on the opposing substrate surface in electrical contact with said second thin film and spaced apart across said second film an amount equal to the spacing of said first electrode pair, thereby also defining an aperture for passing the predetermined electromagnetic radiation through the shutter;

means for detecting EMP incident on the shutter, and;

means for having an input coupled to the means for detecting EMP and an output coupled to said electrode pairs for applying the switching voltage across each thin film in response to the EMP detected, with the switching voltage being applied to said first and second films being such that current flow in said first film is opposite to current flow in said second film.

14. The shutter as defined in claim 13 wherein the substrate is silicon dioxide.

15. The shutter as defined in claim 13 wherein said first and second thin films are alloys made from the system consisting of the elements Te-As-Ge-Si.

16. The shutter as defined in claim 13 wherein the thin films are Te₄₀ As₃₅ Ge₇ Si₁₈.

17. The shutter as defined in claim 13 wherein the thickness of the thin films is at least 1 micron.

18. The shutter as defined in claim 17 wherein the spacing of the first and second electrodes respectively defines an aperture having a width of about 1 to 100 microns.

19. The shutter as defined in claim 13 wherein said means for detecting EMP is an antenna.

20. The shutter as defined in claim 19 wherein said means for applying the switching voltage includes a trigger circuit having an input to receive a signal from said antenna in response to the EMP detected and further including circuit means for discharging a capacitor charged to a voltage level at least equal to the threshold switching voltage of said thin films across each of the thin films.

21. A shutter device for protecting equipment from electromagnetic energy of a predetermined frequency while being transparent to all other electromagnetic wave frequencies, comprising:

a substrate of material which is transparent to substantially all electromagnetic wave frequencies;

first and second layers of an amorphous semiconductor chalogenide alloy glass on said substrate and being positioned on said substrate so that electromagnetic energy passes through said layers;

activating means for creating a current in said layers with current flow in said first layer being opposite to current flow in said second layer and activating said layers when the electromagnetic energy of the predetermined frequency is incident on said activating means whereby said layers are transparent to all electromagnetic energy in the absence of electromagnetic energy of the predetermined frequency and are opaque to electromagnetic energy whenever electromagnetic energy of the predetermined frequency is present.

22. The shutter device defined in claim 21 wherein said layer activating means actuates said layers with a predetermined delay after said layer activating means detects the presence of electromagnetic energy of the predetermined frequency.

23. The shutter device defined in claim 22 wherein said predetermined delay is 10^-6 sec or less.

24. The shutter device defined in claim 21 wherein said layer activating means includes an antenna located in close proximity to a line of sight through said layers and which is tuned to detect and to generate a signal in response to the presence of electromagnetic pulse energy.

25. The device defined in claim 24 wherein said layer activating means further includes a trigger circuit coupled to said antenna, said trigger circuit becoming operative only where electromagnetic pulse energy having an amplitude greater than a predetermined amount is detected and being inactive at all other times.