Compound semiconductor MESFET device with passivation film
First Claim
1. A metal-semiconductor field effect transistor, comprising:
- a substrate of a group III-V compound semiconductor material having a zinc blend structure;
a gate electrode provided on the substrate so as to extend in a <
011>
direction of the substrate;
a channel region defined in the substrate in alignment with the gate electrode and extending in a <
011>
direction of the substrate;
a source region defined in the substrate at one side of the channel region;
a drain region defined in the substrate at the other side of the channel region;
a source electrode provided on the substrate so as to cover a first part of the source region spaced from the gate electrode while leaving a second part of the source region adjacent the gate electrode uncovered;
a drain electrode provided on the substrate so as to cover a first part of the drain region spaced from the gate electrode while leaving a second part of the drain region adjacent the gate electrode uncovered; and
a passivation film of a material experiencing a compressive stress during operation, said passivation film being provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, said passivation film comprising an inner area part covering a part of said second part of the source region adjacent the gate electrode and a part of said second part of the drain region adjacent the gate electrode, said film also comprising a marginal area part covering a part of said second part of the source region spaced from the gate electrode and a part of said second part of the drain region spaced from the gate electrode, said marginal area part having a thickness that is substantially less than that of said inner area part.
1 Assignment
0 Petitions
Accused Products
Abstract
A metal-semiconductor field effect transistor includes a substrate of a group III-V compound having a zinc blend structure. A gate electrode is provided on the substrate so as to extend in a predetermined direction and a channel region is defined in the substrate in alignment with the gate electrode. A source region is defined in the substrate at one side of the channel region and a drain region is defined in the substrate at the other side of the channel region. A source electrode is provided on the substrate so as to cover a first part of the source region spaced from the gate electrode while leaving a second part of the source region adjacent the gate electrode uncovered, and a drain electrode is also provided on the substrate so as to cover a first part of the drain region spaced from the gate electrode while leaving a second part of the drain region adjacent the gate electrode uncovered. A passivation film of a material experiencing stress during operation is provided so as to cover the second part of the source region and the second part of the drain region. The passivation film comprises an inner area part and a marginal area part designed such that the marginal area part has a different thickness than the inner area part.
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Citations
13 Claims
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1. A metal-semiconductor field effect transistor, comprising:
-
a substrate of a group III-V compound semiconductor material having a zinc blend structure; a gate electrode provided on the substrate so as to extend in a <
011>
direction of the substrate;a channel region defined in the substrate in alignment with the gate electrode and extending in a <
011>
direction of the substrate;a source region defined in the substrate at one side of the channel region; a drain region defined in the substrate at the other side of the channel region; a source electrode provided on the substrate so as to cover a first part of the source region spaced from the gate electrode while leaving a second part of the source region adjacent the gate electrode uncovered; a drain electrode provided on the substrate so as to cover a first part of the drain region spaced from the gate electrode while leaving a second part of the drain region adjacent the gate electrode uncovered; and a passivation film of a material experiencing a compressive stress during operation, said passivation film being provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, said passivation film comprising an inner area part covering a part of said second part of the source region adjacent the gate electrode and a part of said second part of the drain region adjacent the gate electrode, said film also comprising a marginal area part covering a part of said second part of the source region spaced from the gate electrode and a part of said second part of the drain region spaced from the gate electrode, said marginal area part having a thickness that is substantially less than that of said inner area part. - View Dependent Claims (2, 3, 4, 5)
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6. A metal-semiconductor field effect transistor, comprising:
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a substrate of a group III-V compound semiconductor material having a zinc blend structure; a gate electrode provided on the substrate so as to extend in a <
011>
direction of the substrate; - View Dependent Claims (8, 9, 10, 11)
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7. a channel region defined in the substrate in alignment with the gate electrode and extending in a <
- 011>
direction of the substrate;a source region defined in the substrate at one side of the channel region; a drain region defined in the substrate at the other side of the channel region; a source electrode provided on the substrate so as to cover a first part of the source region spaced from the gate electrode while leaving a second part of the source region adjacent the gate electrode uncovered; a drain electrode provided on the substrate so as to cover a first part of the drain region spaced from the gate electrode while leaving a second part of the drain region adjacent the gate electrode uncovered; and a passivation film of a material experiencing a tensile stress during operation, said passivation film being provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, said passivation film comprising an inner area part covering a part of said second part of the second region adjacent the gate electrode and a part of said second part of the drain region adjacent the gate electrode, said film also comprising a marginal area part covering a part of said second part of the source region spaced from the gate electrode and a part of said second part of the drain region spaced from the gate electrode, said inner area part having a thickness that is substantially less than that of said marginal area part.
- 011>
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12. A metal-semiconductor field effect transistor, comprising:
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a substrate of a group III-V compound semiconductor material having a zinc blend structure; a gate electrode provided on the substrate so as to extend in a <
011>
direction of the substrate;a channel region defined in the substrate in alignment with the gate electrode and extending in a <
011>
direction of the substrate;a source region defined in the substrate at one side of the channel region; a drain region defined in the substrate at the other side of the channel region; a source electrode provided on the substrate so as to cover a first part of the source region spaced from the gate electrode while leaving a second part of the source region adjacent the gate electrode uncovered; a drain electrode provided on the substrate so as to cover a first part of the drain region spaced from the gate electrode while leaving a second part of the drain region adjacent the gate electrode uncovered; and a passivation film of a material experiencing a tensile stress during operation, said passivation film being provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, said passivation film comprising an inner area part covering a part of said second part of the second region adjacent the gate electrode and a part of said second part of the drain region adjacent the gate electrode, said film also having a marginal area part covering a part of said second part of the source region spaced from the gate electrode and a part of said second part of the drain region spaced from the gate electrode, said marginal area part having a thickness that is substantially less than that of said inner area part.
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13. A metal-semiconductor field effect transistor, comprising:
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a substrate of a group III-V compound semiconductor material having a zinc blend structure; a gate electrode provided on the substrate so as to extend in a <
011>
direction of the substrate;a channel region defined in the substrate in alignment with the gate electrode and extending in a <
011>
direction of the substrate;a source region defined in the substrate at one side of the channel region; a drain region defined in the substrate at the other side of the channel region; a source electrode provided on the substrate so as to cover a first part of the source region spaced from the gate electrode while leaving a second part of the source region adjacent the gate electrode uncovered; a drain electrode provided on the substrate so as to cover a first part of the drain region spaced from the gate electrode while leaving a second part of the drain region adjacent the gate electrode uncovered; and a passivation film of a material experiencing a compressive stress during operation, said passivation film being provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, said passivation film comprising an inner area part covering a part of said second part of the second region adjacent the gate electrode and a part of said second part of the drain region adjacent the gate electrode, said film also comprising a marginal area part covering a part of said second part of the source region spaced from the gate electrode and a part of said second part of the drain region spaced from the gate electrode, said inner area part having a thickness that is substantially less than that of said marginal area part.
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Specification